• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.457-460
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• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.161-165
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• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.3
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• pp.478-485
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• 2021

An injection locking technology of a semiconductor laser is a promising technology to generate optical complex signals by adjusting optical injection parameters. The extraction of the precise injection parameters plays a key role in the generation of the optical complex signal. Rate equations of semiconductor lasers under optical injection are commonly used to map the injection parameters and the corresponding optical complex signal. The accuracy of the generated optical complex signal on the injection parameters is limited since the rate equations require a locking map-based interpolation method. We propose a novel analytic method, namely rate equation-based direct extraction method, to directly calculate the injection parameters without relying on the locking map-based interpolation method. We achieved 103-times improvement of the signal accuracy by using the proposed method compared to locking-map based interpolation method.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.303-308
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• 2008

Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.66-69
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• 2004

We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. The numerical model for semiconductor lasers under the external optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. In this paper, we have analyzed characteristics of semiconductor laser using optical injection locking

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.698-703
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• 2016

We report a new all-optical flip-flop (AOFF) with a quite simple structure, using optical beating in an injection-locked Fabry-Perot laser diode (FP-LD) with optical bistability. While conventional AOFF methods using an injection-locked FP-LD require additional devices such as secondary FP-LDs or polarization controllers for reset operation, the proposed method can be implemented using only a single commercially available FP-LD with set and reset signals. The optical beating induces intensity fluctuations inside the FP-LD, and releases the locking state to the reset state. Even though we demonstrated the AOFF at 100 Mbit/s, we expect that its operation rate could extend to 10 Gbit/s, according to the limit of the FP-LD's frequency response.

• Current Optics and Photonics
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• v.4 no.5
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• pp.405-410
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• 2020

A new all-optical flip-flop (AOFF) method based on the absorption nulls of an injection-locked Fabry-Perot laser diode (FP-LD) in transverse magnetic (TM) mode is proposed and experimentally demonstrated. For the set and reset operations of the AOFF, injection locking and the destructive minus of beating in transverse electric (TE) mode are used. The absorption nulls on the TM mode are modulated according to the operations, and then non-inverted (Q) and inverted (${\bar{Q}}$) outputs can be obtained simultaneously. Thanks to the use of several absorption nulls, the proposed AOFF can achieve multiple outputs with extinction ratios of more than 15 dB. Even though the experiment is demonstrated at 100 Mbit/s, the results of previous experiments using the injection of a CW holding beam imply that the operation speed can increase to 10 Gbit/s.

• Journal of information and communication convergence engineering
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• v.7 no.4
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• pp.556-560
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• 2009

We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. study on FM sideband injection locking has shown that when SLs are locked to the target sidebands of the directly modulated ML, the presence of the unselected sidebands influences the resulting microwave signals. The unselected signals can produce the unwanted beat signals around the desired beat signal, which degrade the overall system performance. This analysis way to generate Giga HZ signal generation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1076-1081
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• 2003

A new technique for generating millimeter-wave signals from a semiconductor laser is presented. The method multiples the signal frequency by using optical injection of short optical pulses at a sub-harmonic of the cavity round-trip frequency to drive the laser oscillating at its resonant frequency. A 32GHz signal is generated using a multisection semiconductor laser operated under continuous wave conditions, by injection optical pulses at a repetition rate equal to the fourth subhamonic(8GHz). The generated millimeter-wave signal exhibits a large submamonic suppression ratio(＞17 dB), large frequency detuning range (>300 MHz) low levels of phase-noise(-77.5 dBc/Hz), and large locking (>400 MHz)

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.255-259
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• 2015

We have proposed and experimentally verified a pulse-width modulation (PWM) generator which directly generated a PWM signal in the optical domain. Output waveforms were clear at the repetition rate of 16 MHz; the duty cycle (DC) was from 14.7% to 72.1%; and the DC-control resolution was about 4.399%/dB. The PWM generator' operation principle is based on the injection-locking property of a single-mode Fabry-$P{\acute{e}}rot$ laser diode (SMFP-LD). The SMFP-LD, which has a self-locked mode wavelength at ${\lambda}_{PWM}$, was used to detect the power of the injection-locking signal (optical analog input). If the analog input power is high, the SMFP-LD is locked to the wavelength of the input signal ${\lambda}_a$ and there is no output after an optical bandpass filter (OBF). If the analog input power is low, the SMFP-LD is unlocked and there is output signal at ${\lambda}_{PWM}$ after the OBF. Thus, the SMFP-LD plus the OBF provide digital output for an analog input. The DC of the output PWM signal can be controlled by tuning the power of the analog input.