• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.8-14
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• 2009

In a laser-plasma wakefield accelerator, the ponderomotive force of an ultrashort high intensity laser pulse excites a longitudinal wave or plasma bubble in a way similar to the excitation of a wake wave behind a boat as it propagates on the water surface. Electric fields inside the plasma bubble can be several orders of magnitude higher than those available in conventional RF-based particle accelerator facilities which are limited by material breakdown. Therefore, if an electron bunch is properly phase-locked with the bubble's acceleration field, it can gain relativistic energies within an extremely short distance. Here, in the bubble regime we show the generation of stable and reproducible sub GeV, and GeV-class electron beams. Supported by three-dimensional particle-in-cell simulations, our experimental results show the highest acceleration gradients produced so far. Simulations suggested that the plasma bubble elongation should be minimized in order to achieve higher electron beam energies.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.45-50
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• 2008

Purpose: A soft contact lens was manufactured by adding naringin known as natural anti-bacterial material to resin solution. With solution eluted from manufactured contact lens, we examined its optical properties, physical and chemical states of naringin in the polymer, and elution properties. Methods: The soft contact lens with naringin was synthesized by bulk polymerization method. IR spectrum and HPLC were used to define the bonding type of naringin itself in the soft contact lens contained naringin, elution process of naringin to the saline solution, and the amount of naringin solution eluted from the lens with elapsed time. Results: Naringin was continuously eluted with constant concentration from the soft contact lens for about a month and the structure ofnaringin which is eluted was as same as before it was added to resin solution. Any change in optical properties such as transmittance couldn't be found. Bonding state and the structure of naringin in contact lens were explained with IR spectrum and HPLC results. Conclusions: In the contact lens with naringin, naringin remained in the contact lens bonding with weak hydrogen bonding and/or van der Waals force between naringin and polymer. Naringin was continuously eluted from the contact lens contained naringin during about 1 month. Even after 1 month, it showed that the concentration of the naringin eluted was approximately 10 ppm in a day. From the results, adding naringin to the soft contact lens resin is very effective method for manufacturing the soft contact lens which has anti-bacterial function for a period of time.

• Applied Chemistry for Engineering
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• v.30 no.3
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• pp.358-364
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• 2019

To improve the optical characteristics and antifouling of anti-reflective coating (AR) films, various AR coating films were prepared by varying the mixing ratio of tetraethylorthosilicate (TEOS)/base and methyltrimethoxysilane (MTMS)/acid hybrid solution. Prepared AR coating films were characterized by UV-Vis spectroscopy, contact angle analyzer, atomic force microscope (AFM), FT-IR and pencil scratch hardness test. In an AR coating film that prepared from the hybrid solution with a 10 wt% MTMS/acid solution, the glass substrate showed an excellent optical property (97.2% transmittance), good antifouling ($121^{\circ}$ water contact angle and $90^{\circ}\;CH_2I_2$ contact angle) and moderate mechanical strength (pencil hardness of 4 H). In particular, it is considered that the good antifouling was due to the well dispersion of the methyl group ($-CH_3$), derived from a small amount of MTMS/acid solution in the hybrid solution, on the substrate surface. From results of the pencil hardness test, the mechanical strength of AR coating film was improved as the content of MTMS/acid solution increased.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.187-187
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• 2012

In this report, the plasmonic nanopores of less than 5 nm diameter were fabricated on the apex of the pyramidal cavity array. The metallic pyramidal pit cavity can also utilized as the plasmonic bioreactor, and the fabricated Au or Al metallic nanopore can provide the controllable translocation speed down using the plasmonic optical force. Initially, the SiO2 nanopore on the pyramidal pit cavity were fabricated using conventional microfabrication techniques. Then, the metallic thin film was sputter-deposited, followed by surface modification of the nanometer thick membrane using FESEM, TEM and EPMA. The huge electron intensity of FESEM with ~microsecond scan speed can provide the rapid solid phase surface transformation. However, the moderate electron beam intensity from the normal TEM without high speed scanning can only provide the liquid phase surface modification. After metal deposition, the 100 nm diameter aperture using FIB beam drilling was obtained in order to obtain the uniform nano-aperture. Then, the nanometer size aperture was reduced down to ~50 nm using electron beam surface modification using high speed scanning FESEM. The followed EPMA electron beam exposure without high speed scanning presents the reduction of the nanosize aperture down to 10 nm. During these processes, the widening or the shrinking of the nanometer pore was observed depending upon the electron beam intensity. Finally, using 200 keV TEM, the diameter of the nanopore was successively down from 10 nm down to 1.5 nm.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.85.2-86
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• 2015

The YORP effect is non-gravitational force that changes the spin-status of asteroid. So far this effect has been directly detected only from the Near-Earth asteroids (Taylor et al. 2007; Lowry et al. 2007, 2014; Breiter et al. 2011; Durech et al. 2008, 2012). Pravec at el. 2008 found the evidences for changing spin rate of small asteroids (3 - 15 km) by the YORP effect in the Main-Belt and Mars-crossing asteroids. The Mars-crossing asteroids (1.3 < q < 1.66 AU) are objects that cross orbit of the Mars. The Mars-crossing asteroids are regarded as one of the main sources for the Near-Earth asteroids. We expect that rotation of Mars-crossing asteroids would be influenced by the YORP effect. We try to search observational evidence of the YORP effect for the Mars-crossing asteroid. Our target 2078 Nanking is a population of the Mars-crossing asteroid. First light-curve of 2078 Nanking was obtained from Mohamed et al. 1994, and Warner et al. 2015 recently published new observational data. We observed this asteroid on 26th Nov. 2014 and 17th Jan. 2015 using SOAO (Sobaeksan Optical Astronomy Observatory) 0.61 m telescope with 4K CCD. Using light-curve inversion method (Kaasalainen & Torppa 2001; Kaasalainen et al. 2001), we try to determine the pole orientation and shape model of this asteroid based on the combination of our light-curve and literature photometric data. Knowing spin parameters, such as rotational period and spin axis, are essential for studying the YORP effect. In this presentation, we provide some preliminary results of our recent study: light-curve and processing of shape modeling of 2078 Nanking. We plan to find observational clue for the YORP effect on the Mars-crossing asteroids.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.96-96
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• 2009

투명전도막은 FPD의 전자부품에서 전극으로 널리 사용되고 있으며 현재 대부분의 투명전도막으로는 ITO가 사용되고 있다. 하지만, ITO에 사용되는 In은 희유금속으로 지속적인 사용량 증가로 가격의 급등과 더불어 수급 불안정으로 인해 In을 대체하고자 하는 연구가 집중적으로 이루어지고 있다. 그러나 $In_2O_3$를 대체한 ZnO계 등은 비저항이 높아 대체 적용이 가능하지 못하고 있다. 이에 In의 양을 줄이면서 상대적으로 저가이면서 광학적 특성이 우수한 ZnO을 첨가하여 기존의 ITO에 상응하는 전기전도도와 광투과율을 얻을 수 있는 새로운 3성분계 TCO 에 대한 연구가 활발히 이루어지고 있다. 따라서, 본 연구그룹은 $In_2O_3$을 기본 조성으로 하는 $In_2O_3-ZnO-SnO_2$계를 선정하여 IZTO target을 제조 후 RF magnetron sputtering 방법으로 투명전도막을 제작하였다. 본 연구에서는 RF 파워와 동작압력, 동작시간 그리고 열처리온도의 증착 조건에 따른 IZTO 박막의 특성을 평가하였다. 박막의 특성 및 표면 미세구조를 관찰하기 위해 AFM(Atomic Force Microscope)을 이용하였으며, XRD(X-ray diffraction)을 이용하여 결정성을 분석하였고, 4 point-prove, Hall effect measurement와 UV/Visible spectrometer를 통해 전기적, 광학적 특성을 평가하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.65-69
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• 2011

The $Tio_2$ films were prepared on glass, silicon and quartz substrate at different temperature by radio frequency reactive magnetron sputtering under different flow ratios of Ar and O2 gases. The films were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer. Only the anatase phase was observed in films and their diffaction peaks increased with temprature of substrate. The size of crystallites decreased with higher concentration of oxygen. Refractive index and optical absorption of thin films decreased with higher concentration of oxygen. The thin films which have good transmittance spectra and smooth surface, deposited in the sputtering ambient with 10 % of $O_2$ at the temperature from $400{\circ}C$ to $300{\circ}C$.