• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.351-355
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• 1996

In optical disc system, lens actuator of 4-wire has unwanted moment which occurs tilt. The moment around the axis pallet to the tangential direction of the disk occurs to the moving part. when the moving part is moved in tracking direction and focus driving force is applied. This paper analyzed coupled effect due to the moment based on structural analysis and magnetic field analysis, both using finite element method.

• Transactions of the Society of Information Storage Systems
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• v.7 no.2
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• pp.75-79
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• 2011

Recently mobile phone camera become generally spread, it is required to develop high resolution, multi-functional camera module for obtaining high image quality. To satisfy this demand, number of pixels has been increased and pixel size decreased in small mobile phone cameras. As a result, image quality is seriously dropped by blur phenomena. Especially when hand tremble is occurred, image quality is dropped by camera shake. Therefore, to obtain high quality image, it is necessary to compensate user's hand tremble. In this paper, we propose voice coil actuator for compensating hand tremble, which can apply optical image stabilization (OIS) system. Sensitivity analysis and size optimization are performed to obtain high driving force. Finally, it is confirmed that the optimized electromagnetic circuit can be applied in OIS system.

• ETRI Journal
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• v.24 no.3
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• pp.205-210
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• 2002

This paper describes our high-density near-field optical recording using bent cantilever fiber probes installed in an atomic force microscope. We conducted a near-field reading of nano-scale hole patterns with a 100 nm spatial resolution and a 25 ${\mu}m$/s scan speed; this implies a capability of a data reading density of 60 Gb/$in^2$ with a 0.25 kbps data transfer rate. In addition, we investigated re-writable near-field recording on photochromic diarylethene films. We successfully recorded erasable memory bits having a minimum width of 600 nm in a writing time as short as 30ms. We found that using a cantilever probe simplifies the setup and operation of the near-field optical recording system and may offer multifunctional recording capabilities.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.249-252
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• 2001

The paper represents the design and fabrication of an electrostatic micro actuator with $p^+$,/TEX> Si cantilevers. The micro actuator consists of a plate suspended by four $p^+$,/TEX> silicon cantilevers and an electrode on a glass substrate. The $p^+$,/TEX> Si structure is fabricated by the boron diffusion process and the anisotropic wet etch process. The cantilevers of the micro actuator curl down because of the residual stress gradient in $p^+$,/TEX> silicon. When the electrostatic forec is applied to the $p^+$,/TEX> cantilevers, the vertical displacement of the plate can be achieved. The deflection of the cantilever due to the residual stress gradient and the vertical displacement by electrostatic force were calculated. The displacement of the plate was measured with a laser displacement meter for various input voltages and frequencies. The feasibility of the proposed micro actuator for the applications to optical pickup devices or optical communication devices was confirmed by the experiments.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.55-59
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• 2003

With the progress of optical communication technology recently, the development of micro actuator using MEMS technology has been made for optical switching. The actuation types are various; electrostatic, electromagnetic, and electrostatic +electromagnetic etc. Among them, the electrostatic type is the most popular because of the relative ease of fabrication, integration and shielding as well as low power consumption. However, it needs a high voltage to generate a larger driving force. To overcome this problem, we proposed a new type of electrostatic actuator with an extra vertical electrode in addition to the horizontal one. The vertical electrode also lays a role of making the stable angular rotation as a stopper. From the theoretical analysis and experiment, we find the actuation voltage can be reduced up to 50 % of that of the conventional one.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1553-1555
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• 2003

Coatings on glass with highly transparent conducting oxide films(TCOs) are performed mostly by using indium tin oxide(ITO). This Oxide material is very common for applications where both high electrical conductivity. Photovoltaic cells, transparent electrical heater, selective optical filter, and a optical transmittance are essential. In this study, ITO thin films were deposited on $SiO_2$/soda-line glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy(AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-800nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.844-849
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• 2009

The moving behavior of particle with voltage biasing is studied by analyzing the displacement current generated in electrodes and the drift current by moving particles in cell gap. These currents are ascertained by optical reflectivity on the panel. We obtained the saturated current after a peak in threshold voltage which is coincide with reflectivity of 80%. These saturated optical reflectivity and its drift current offer optimum q/m of particles and driving voltage and can be analytically studied on grey scale methods. Especially regional analysis is useful to aging and driving voltage and the understanding of operating mechanism of charged particle type display.

• Journal of the Korean Physical Society
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• v.81
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• pp.516-524
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• 2022

Recently, three-dimensional (3D) nano-processing technology that can increase design freedom and space efficiency of devices has been being rapidly developed, and is highly expected to provide a key path for the development of next-generation optical devices. This technology has shown a high possibility of success in realizing the future devices, but still are facing many challenges in the popularization and practical application. In particular, the ability of quickly, precisely, and stably fabricating complex 3D nanostructures composed of many individual elements is strongly demanded. In recent years, the so-called four-dimensional (4D) nanofabrication technology is attracting attention. The 4D nanofabrication is achieved by applying an external force to manufactured two-dimensional nanostructures, inducing deformation in time, and then precisely transforming them into 3D nanostructures. The 4D nanofabrication technology with excellent flexibility, versatility, functionality, and reconfiguration properties provides a new paradigm enabling effectively control the mechanical, electrical, and optical properties of existing materials. In this review, we examine the conventional methods for fabricating 3D nanostructures, and then investigate 4D nanofabrication technology in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.1-390.1
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• 2016

The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.