• Title/Summary/Keyword: Optical film

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Lateral Position Measurement System for Precision Alignment of Roll-to-Roll Printing Using Alignment Patterns and Quantity of Light (정렬패턴과 광량을 이용한 롤투롤 인쇄전자공정의 횡 방향 웹 위치 측정 시스템)

  • Jung, Minkyu;Kim, Hyungi;Oh, Dongho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.39 no.9
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    • pp.879-884
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    • 2015
  • Printed electronics is a technology that produces electronic devices and circuits by printing functional ink on a web, which is a film-like flexible material. This technology is suitable for large-scale and high-speed mass production, and is a next-generation process technology that can fabricate electronic devices from flexible materials. As precise measurement of the positions of the web is required in order to commercialize such a printed electronics process, a measurement system with an optical encoder with a precision of micrometers had been proposed in the preceding research of this study. However, the lateral positions of the web could not be measured in the preceding research as the phenomenon of the entire web being moved in the lateral direction could not be detected. In this study, a measurement system that utilizes the differences in the amount of light reflected from the alignment patterns depending on the web positions in the lateral direction was proposed for measuring the lateral positions of the web. In addition, its reliability was verified and then the effect when measuring printed alignment patterns was analyzed by experiments.

Electrical Switching Characteristics of Ge-Se Thin Films for ReRAM Cell Applications

  • Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.343-344
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    • 2012
  • It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

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Low Temperature Nanopowder Processing for Flexible CIGS Solar Cells (플렉시블 CIGS 태양전지 제조를 위한 저온 나노입자공정)

  • Park, Chinho;Farva, Umme;Krishnan, Rangarajan;Park, Jun Young;Anderson, Timothy J.
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.61.1-61.1
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    • 2010
  • $CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

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Properties of Organic Light Emitting Diode with ITO/MEH-PPV/Al Structure on Heating Temperatures (열처리 온도에 따른 ITO/MEH-PPV/Al 구조의 유기 발광다이오드의 특성연구)

  • 조중연;장호정
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.4
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    • pp.35-38
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    • 2003
  • Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

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Defects analysis of RE : YAG (RE = Nd3+, Er3+) single crystal synthesized by Czochralski method (Czochralski법으로 성장된 RE : YAG(RE = Nd3+, Er3+) 단결정의 결함분석)

  • Park, Cheong Ho;Joo, Young Jun;Kim, Hye Young;Shim, Jang Bo;Kim, Cheol Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.1
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    • pp.1-7
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    • 2016
  • RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

Synthesis of Core-shell Copper nanowire with Reducible Copper Lactate Shell and its Application

  • Hwnag, Hyewon;Kim, Areum;Zhong, Zhaoyang;Kwon, Hyeokchan;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.430.1-430.1
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    • 2016
  • We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.

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Aluminum based ZnO/Al/ZnO flexible Transparent Electrodes Fabricated by Magnetron sputtering (스퍼터링 증착법을 이용한 ZnO/Al/ZnO 구조의 유연투명전극 연구)

  • Bang, GeumHyuck;Choi, Dooho
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.2
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    • pp.31-34
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    • 2018
  • In this study, the feasibility of ZnO/Al/ZnO flexible transparent electrodes for future flexible optoelectronic devices was investigated. All depositions were performed on PET substrates. The thicknesses of the top and bottom ZnO layers were 5-70 nm and 2.5-20 nm, respectively. The highest visible light transmittance was recorded when the thicknesses of the top and bottom ZnO layers 30 nm and 2.5 nm, respectively. 62% optical transmittance (at the wavelength of 400 nm) and sheet resistance of $19{\Omega}/{\Box}$ were measured. After repetitive bending test at a curvature radius of 5 mm, the transmittance and sheet resistance did not change.

Observation by the Microscopic Analysis of Lacquer Layer for Identification of Lacquer-ware Function (칠 기법 규명을 위한 칠도막의 현미경 관찰)

  • Kim, Soo-Chul;Lee, Kwang-Hee
    • Journal of the Korean Wood Science and Technology
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    • v.36 no.6
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    • pp.96-104
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    • 2008
  • In this study, the observation of test pieces with an optical microscope was carried out after fabricating 4 groups of standard lacquer, in order to inquire into the ancient lacquering techniques. Group I had transparent reddish brown color, and the part of layer was indefinite, and the layer polished was easily distinguished. Group II had mostly transparent yellowish brown color, and it was possibility distinguished the layers when they were varnished with mixed lacquer after prime coating, and when they were varnished with lacquer as the prime coating. Group III set up membrane in the hardening process of the lacquer, and the lacquer and the unsaturated fatty acid of internal part was dried, so the top layer and the lacquer layer were separated and observed. Group IV: When the lacquer coat film of Group IV test pieces were observed in polarized light, the ferrous components were seen as the black and red color were mixed, and the silica crystals of silty soil were distinguished by reflection of lights. And the colors were distinguished as the lacquer layer of ruddle had red color, and the mixed lacquer of reddish lacquer and ruddle had the deep red color at the top and the bottom, but the middle part had the bright red color.

Controlling the surface energy and electrical properties of carbon films deposited using unbalanced facing target magnetron sputtering plasmas

  • Javid, Amjed;Kumar, Manish;Yoon, Seok Young;Lee, Jung Heon;Han, Jeon Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.231.1-231.1
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    • 2015
  • Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

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Synthesis and Electro-optical Properties of π-Conjugated Polymer Based on 10-Hexylphenothiazine and Aromatic 1,2,4-Triazole

  • Choi, Ji-Young;Kim, Dong-Han;Lee, Bong;Kim, Joo-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.9
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    • pp.1933-1938
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    • 2009
  • New $\pi$-conjugated polymer with vinylene linkage, poly((10-hexyl-3,7-phenothiazine)-alt-(4-(4-butyl-phenyl)- 3,5-diphenyl-4H-[1,2,4]triazole)-3,5-vinylene) (PTV-TAZ) was synthesized by the Heck coupling reaction. The photoluminescence (PL) maximum wavelength and the band gap energy of PTV-TAZ film were 555 nm and 2.41 eV, respectively. The HOMO energy level of PTV-TAZ was -4.99 eV, which was slightly lower than that of PTV (-4.89 eV). Electron deficient aromatic 1,2,4-triazole (TAZ) in the polymer backbone does not affect the HOMO energy level significantly. The maximum efficiency and brightness of double layer structured electroluminescent (EL) device (ITO/PEDOT (30 nm)/PTV-TAZ (60 nm)/Al) were 0.247 cd/A and 553 cd/$m^2$, respectively, which were significantly higher than those of the device based PTV (1.65 ${\times}\;10^{-4}$ cd/A and 4.3 cd/$m^2$). This is due to that TAZ unit improves electron transporting ability in the emissive layer. The turn-on voltage (defined as the voltage required to give a luminescence of 1 cd/$m^2$) of brightness of the device based on PTV-TAZ was 12.0 V, which was similar to that the based on PTV (11.5 V). This is due to that the ionization potential of PTV-TAZ is very similar to that of PTV.