• Electrical & Electronic Materials
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• v.10 no.2
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.31-36
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• 2002

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.1-6
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• 2004

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.288.1-288.1
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• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.239-241
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• 1996

The energy gap of GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displaced a direct energy gap at 1.79 eV and an indirect energy gap at 1.62 eV at $300^{\circ}K$ with the addition of Erbium. Also, an impurity optical absorption peak was found to have occurred at $6505\;cm^{-1}$. The peak identified the origin of the electronic transitions between the energy levels of $Er^{3+}$ ions when the addition of dopant.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1353-1364
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• 1996

Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.