• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.113-120
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• 2005

Luminous efficiency and uniformity in a LCD-BLU are mainly determined by fine scattering patterns formed on the light guide panel. We propose a novel fabrication method of 3-dimensional scattered patterns based on anisotropic etching of silicon wafers. Micro-pyramid patterns with 70.5 degree apex-angle and micro-prism patterns with 109.4 degree apex-angle can be self-constructed by the wet, anisotropic etching of (100) and (110) silicon wafers, respectively, and those patterns are easily duplicated by the PDMS replica process. Experimental results on spatial and angular distributions of irradiation from the light guide panel with the micro-pyramid patterns were very consistent with the calculation results. Surface roughness of the silicon-based micro-patterns is free from any artificial defects since the micro-patterns are inherently formed with silicon crystal surfaces. Therefore, we expect that the silicon based micro-patterning process makes it possible to fabricate perfect 3-dimensional micro-structures with crystal surface and apex angles, which may guarantee mass-reproduction of the light guide panels in LCD-BLU.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.226-232
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• 1999

We have investigated the output power performance of a continuous-wave chromium-doped YAG laser ($Cr^{4+}$:YAG laser), pumped by a Nd: YAG laser. With an output coupler of 1% transmission, we obtained as much as 400 mW of the average output power at 1.450 ${\mu}{\textrm}{m}$. The power slope efficiency of 8%, when the gain medium was cooled to 2$0^{\circ}C$. We tuned the wavelength of the $Cr^{4+}$:YAG laser, at pump power of 6 W, by using birefringent filter. As a result, lasing wavelength was tuned from 1.399 ${\mu}{\textrm}{m}$ to 1.532 ${\mu}{\textrm}{m}$, with the maximum output power of 340 mW at 1.4903 ${\mu}{\textrm}{m}$ and the linewidth was 0.21 nm.

• Korean Journal of Optics and Photonics
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• v.27 no.3
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• pp.95-100
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• 2016

High-power quasi-continuous-wave (qcw) operation in Yb-doped double-clad fiber lasers with near-diffraction-limited quality of the output beam is reported. Based on numerical simulation, we built a simple, all-fiberized Yb fiber laser, and a fiber-based master-oscillator power amplifier (MOPA). Both laser systems have successfully produced qcw output with average power greater than 150 W at 1080 nm and 10 ms pulse duration at 10 Hz repetition rate, corresponding to a peak power greater than 1.5 kW for 205 W of pump power at 976 nm. Laser performance, including beam quality and slope efficiency, was characterized in both configurations. Prospects for power scaling and applications are discussed.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.49-53
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• 2008

The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.93-97
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• 2005

Sea operation monitoring system is a system for the automatic ship operation that is used on the variety sea operations such as laying optical cables on the sea between the countries, laying cables on the seabed for a remote island, laying pipelines for the natural gas, and so forth. This system processes data which optained through setting up environment and input from several sensors, and display GPS information with ENC data. And this system processes not only data of root file about sea operation, but also realtime information from PDA of client wirelessly connected with AP on wireless LAN, In addition, this system can improve efficiency of the operation as a result of enabling free movement within valid range. This paper design and Implementation Monitoring system from above appropriate to the embedded system, and improve competitive power of ship through prevention of a ship accident, to keep minimizing operation loads and support both the automatic ship operation and the safety voyage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9B
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• pp.793-805
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• 2003

In OBS (Optical Burst Switching) networks which decouple the burst from its header, the fault of a fiber link can lead to the failure of all the light-path that traverses the fiber. Because each light-path is expected to operate at a rate of a few Gbps by using WDM (Wavelength Division Multiplexing) technology, any failure may lead to large data loss. Therefore, an efficient recovery scheme must be provided. In this paper, we analyze network utilization and BCP (Burst Control Packet) loss rate according to each link failure by applying the conventional restoration schemes in OBS networks. And through these simulation results, an ASPR scheme is proposed improve the fault management scheme in terms of recovery time and throughput. Finally, We compare the performance of our proposed scheme with that of the conventional one with respect to burst loss rate, resource utilization and throughput by OPNET simulations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.602-606
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• 2008

LCD is supplied light by BLU(Back Light Unit) and the light represents color by each color filter. Also LCD adjusts the amount of light by controlling liquid crystal between the glass of upper plate and one of lower. However, it is impossible to completely exclude light due to the structural and physical characteristic of liquid crystal. Therefore, on transfering light through optical sheet and liquid crystal, many problems are generated. They are related with energy efficiency and get effective for the contrast of LCD to have lower contrast ratio than other display devices. To solve the problems, many techniques have been studied and developed but don't exist keys to solution for them. Among methods, local dimming is one example to be applied to LCD. In this paper we propose image processing algorithm for local dimming of BLU of LED used as light source. The proposed algorithm extracts maximum luminance signal and lights using each extracted signal on segmented region of BLU. Also the proposed algorithm generates image signal in corresponding to luminance of the segmented region and supplies them with LCD panel to represent image with improving luminance ratio.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.4131-4136
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• 2015

This paper compares and calculates more precisely the averaged reflectance of antireflection coating with different structure of single and 6 layer assuming the incident angle of light changing from $8^{\circ}$ to $60^{\circ}$ not like normal incidence as usual case. The reflectivity of AR coating of 6 layers with 180 nm thickness having index profile suggested as linear and quintic function and single layer with same thickness having even index are calculated and compared, when the wavelength of incident light ranges from 400 nm to 1200 nm. As the results the AR coating with 6 layers having quintic(linear) function index profile shows the lower reflectance about 11.6 %(14.6 %) than other index profiles, which is approximately 8 % lower reflectance compared with single layer case(about 19.6 %). This results could be applied for the better antireflection coating design applying to optical devices and filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.51-52
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photo current is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO and ITO/PEDOT:PSS were used as an anode, and Al and LiF/AI were used as a cathode. It was found that an incorporation of PEDOT:PSS layer between the ITO and $Alq_3$ increases a built-in voltage by about 0.4V. This is consistent to a difference of a highest occupied energy states of ITO and PEDOT:PSS. This implies that a use of PEDOT:PSS layer in anode improves the efficiency of the device because of a lowering of anode barrier height. With a use bilayer cathode system LiF/Al, it was found that the built-in voltage increases as the LiF layer thickness increases in the thickness range of 0~1nm. For 1nm thick LiF layer, there is a lowering of electron barrier by about 0.2eV with respect to an Al-only device. It indicates that a very thin alkaline metal compound LiF lowers an electron barrier height.