• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.72-79
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• 2006

We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.44-50
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• 1985

The crystallization behavior of $K_2O-SiO_2$ glasses with added $TiO_2$ and the effect of $TiO_2$ on internal nuleation at temperature in the range of 875 to 121$0^{\circ}C$ have been investigated by means of X-ray diffractometry optical microscopy and scanning electron microscopy. The crystalline phase of these glasses identified by X-ray diffractometry is cristbalite. The scanning electron microspcopy reveals a two-phase layer of dendritic crystals and intersitial melt which grow from the surface at a constant rate, The observed crystallization rates are consistent with a diffusion-controlled mechanism. An equation relating viscosity and undercooling to growth rate is presented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.105-109
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• 2017

AlN single crystal was thermally treated at $1200^{\circ}C$ and $1500^{\circ}C$ in the ambient gas of nitrogen. AlN single crystal was obtained by sublimation growth process using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. In this report, the optical microscopic results taken from thermally treated AlN single crystal and FWHM (Full width of half maximum) measured by DCXRD (Double crystal X-ray Diffractometry) were reported.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.854-857
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• 2006

The synthesis of ester type, banana-shaped, photo - crosslinkable mesogens is described. The reactive mesogens, derivatives of 1,3-phenylene bis{4-[4'- (alken-1-yloxy)-biphenyl-4-carboxylate]benzoate}s, were synthesized varying the length of alkyl end groups. The obtained monomers and polymers were characterized by FT/IR, NMR spectroscopy, DSC, polarized optical microscopy, and X-ray diffractometry.

• Journal of the Korean Ceramic Society
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• v.18 no.4
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• pp.219-228
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• 1981

To clarify influences of silicious raw materials on mineralogcal and petrological properties in clinkering process clay, shale, quartzite, sand and coal ash have been used as silicious raw materials. The tests on thermal properties, reactivity and burnability of raw mixtures which have different silicious raw materials respectively have been made by means of X-ray diffractometry, differential thermal analysis, optical microscopy and transmission electron microscopy. Limestone contains coarse crystalline grains which show 0.1-1.0mm and its decarbonation temperature is 86$0^{\circ}C$. Reaction temperatures among raw mixtures have been determined by X-ray diffractometry and their results are as follows; clay minerals under 1, 00$0^{\circ}C$, mica group, 100$0^{\circ}C$-110$0^{\circ}C$, feldspar group, 1, 10$0^{\circ}C$-1, 20$0^{\circ}C$ and quartz 1, 20$0^{\circ}C$-1, 30$0^{\circ}C$. Burnabilities of raw mixtures of different temperatures have been found that they mainly depend upon their mineral contents in silicious raw materials and their order is as follows; $clay\geq shale\gg quartzite \geq sand$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.324-326
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• 2008

Novel X-shaped molecules containing perfluoroalkyl alkanes as a side chain have been synthesized and characterized. The properties of mesophases were investigated by a combination of differential scanning calorimetry (DSC), polarizing optical microscopy (POM), X-ray diffractometry (XRD) and electro-optical measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.32-38
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• 1994

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

• Journal of the Korean Society of Visualization
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• v.22 no.1
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• pp.18-27
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• 2024

A series of shock wave pulses with Mach number 2.2 of 100, 200, and 300 shocks were applied to lead sulfide (PbS) nanomaterials at intervals of 5 sec per shock pulse. To investigate the crystallographic, electronic, and magnetic phase stabilities, powder X-ray diffractometry (XRD), diffused reflectance spectroscopy (DRS), and vibrating-sample magnetometry (VSM) were employed. The material exhibited a rock salt structure (NaCl-type structure); XRD results indicated that material is monoclinic with space group C121 (5). Further, XRD results showed shifts due to lattice contraction and expansion when material was subjected to shock wave pulses, indicating stable material structure. Based on the data obtained, we believe that the PbS material is a good choice for high-pressure, high-temperature, and aerospace applications due to its superior shock resistance characteristics.