• 한국결정성장학회지
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• 제3권2호
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• pp.140-148
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• 1993

As-Se-Ge 3원계 칼코게나이드 유리의 비정질화와 결정화 및 박막화를 통하여 전기적, 광학적 특성을 평가코자 하였다. 조성의 범위는$As_{20~50}, Se_{40~70}, Ge_{10~40}$ at%였으며, Se을 40 at%로 고정시 As가 30 at%이상일 때 급격한 전기전도도의 증가를 가져왔으며,$As_{20}Se_{50}Ge_{30}$을 결정화시킨 경우, $476^{\circ}C$에서 3시간 결정을 성장시켰을 때의 전기전도도가 가장 양호하였으며, 주결정상으로 $GeSe_2와 As_2Se_3$의 흔정을 관찰할 수 있었다. 박막에서는1.8~2.4eV의 광에너지 영역에서 $2{times}10^3~7{times}10^4$의 광흡수계수를 나타냈고, 1.85eV의 광학적 에너지 갭을 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• 한국광학회지
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• 제32권3호
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• pp.114-119
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• 2021

산업용으로 이용하는 대면적 그래핀 시트는 주로 Cu foil 위에서 화학증기증착법(chemical vapor deposition, CVD)을 이용하여 성장된다. 그러나 모든 면적에서 균일하게 성장되는 것은 아니므로, 품질이 불만족스러운 그래핀 필름을 제외시키는 과정이 필수적으로 요구된다. 비침습적인 반사형 광학적인 방법을 사용하면, 그래핀의 성장프로세스 도중이나 성장 후에 빠르고 편리하게 분류할 수 있다. 본 논문에서는 국소적인 그래핀 필름의 파장별 반사 대비율(reflectance contrast)이 그래핀의 품질과 밀접한 관련이 있어 품질이 불만족스러운 그래핀 필름을 제외시키는 데에 효과적인 데이터로 이용될 수 있음을 밝혔다. 파장별 반사 대비율을 계산하기 위해서, 화학적 퍼텐셜(chemical potential)과 전자간 널뛰기(hopping) 에너지, 그리고 온도 등의 요소가 성장된 그래핀의 광학적 반사 대비율에 어떠한 영향을 미치는지 조사하였다.

• 폴리머
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• 제39권2호
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• 한국재료학회지
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• 제31권12호
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• pp.665-671
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• 2021

A 1.8 ㎛ thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

• Composites Research
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• 제35권2호
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• pp.53-60
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• 2022

본 연구에서 액정성 에폭시인 Diglycidyl ether of terephthalylidene-bis-(4-amino-3-methylphenol) (DGETAM)을 사용해 경화제로는 아민계 경화제인 4,4'-diaminodiphenylethane (DDE)와 양이온 개시제인 N-benzylpyrazinium hexafluoroantimonate (BPH)를 사용하여 필름의 형태로 샘플을 제작하였다. 합성의 확인을 위하여 ¹H-NMR과 FT-IR을 사용하였고, DSC와 POM을 이용하여 DGETAM의 액정성을 확인하고, LFA를 사용하여 샘플의 열전도도를 측정하였다. 활성화 에너지는 TGA를 사용하여 등온 열분해를 진행해 측정한 데이터를 토대로 Arrhenius 식을 사용하여 구하였다. 에폭시 필름의 열전도도를 측정한 결과 DDE를 사용하였을 때, 더 높은 열전도도를 나타내었고, 5% 분해시 BPH를 사용한 필름과 유사한 활성화 에너지를 나타내는 것으로 보아, 열전도도가 열적 안정성에 영향을 미치는 것을 확인할 수 있었다.

• 대한전자공학회논문지
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• 제19권5호
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• pp.1-4
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• 1982

Bridgman방법으로 Inse 단결정을 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있으며 격자 상수는 a=4.02A, c=24.96A이고 전기 전도도는 300°K에서 ∼10-1, 50°K에서 ∼10-6(Ω·cm)-1이다. 전기 전도형은 n형으로 도우너 (donor) 준위는 전도대밑 0.072ev 되는 점에 위치하고 있다. 광전도도는 840nm부터 1120nm까지의 영역에서 감도를 가지고 있으며 광투과 특성으로부터 구한 InSe의 에너지 갭(gap)은 1.21ev이다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.28-32
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• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• 한국세라믹학회지
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• 제54권5호
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• pp.349-365
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• 2017

Graphene has attracted a lot of attentions due to the unique electrical and optical properties. Compared with the noble metal plasmons in the visible and near-infrared frequencies, graphene can support surface plasmons in the lower frequencies of terahertz and mid-infrared and it demonstrates an extremely large confinement at the surface because of the particular electronic band structures. Especially, the surface conductivity of graphene can be tuned by either chemical doping or electrostatic gating. These features make graphene a promising candidate for plasmonics, biosensing and transformation optics. Furthermore, the combination of graphene and metasurfaces presents a powerful tunability for exotic electromagnetic properties, where the metasurfaces with the highly-localized fields offer a platform to enhance the interaction between the incident light and graphene and facilitate a deep modulation. In this paper, we provide an overview of the key properties of graphene, such as the surface conductivity, the propagating surface plasmon polaritons, and the localized surface plasmons, and the hybrid graphene/metasurfaces, either metallic and dielectric metasurfaces, from terahertz to near-infrared frequencies. Finally, there is a discussion for the current challenges and future goals.