• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.239-247
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• 2005

In this study, we have used newly developed dual-beam shearography which is based on laser speckle that includes various information about an object. Among the several shearing techniques, we used Michelson shearing interference technique which is the most powerful. Acrylate plate was used as a sample, which has inner defects and low thermal conductivity. Michelson shearing interferometer was used for obtaining speckle fringes. We also used phase shifting technique to get a phase map. Using single beam illumination, we could obtain mixture of deformation components of both in-plane and out-of-plane. In order to separate the two components, we have used dual-beam shearography technique. We have obtained a speckle pattern of both before and after deformation. Through LS filtering and unwrapping processes, we could find a position and a shape of the inner defects easily. Deformation of the acrylate plate due to thermal heating has occurred mainly in z-direction(out-of-plane) because it has low thermal conductivity. The acrylate plate was deformed only at the restricted area where the electrical heat applied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.66-72
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• 2000

The behavior of nucleation and crystallization in the $Li_2O_3-SiO_2$ glass heat-treated at different condition under the conventional and microwave processing was studied by differential thermal analysis (DTA), X-ray diffractometry (XRD), optical microscopy (OM), and electrical conductivity measurement. Nucleation temperature and temperature of maximum nucleation rate in both conventionally and microwave heat-treated samples were 460~$500^{\circ}C$ and $580^{\circ}C$, respectively. It was expected that the probability for bulk crystallization increased in microwave heat-treated sample, compared to conventionally heat-treated one. Degree of crystallization increased with increasing crystallization temperature in both conventionally and microwave heat-treated samples. However, pattern of crystallization growth under microwave processing appeared to be quite different from that under the conventional one due to its internal or volumetric heating. Electrical conductivity of conventionally and microwave heat-treated samples were 1.337~2.299, 0.281~~$0.911{\times}10^{-7}\Omega {\textrm}{cm}^{-1}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.252-255
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• 2014

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

• Polymer(Korea)
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• v.36 no.4
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• pp.531-535
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• 2012

Conductive polyaniline (PANI) nanofibers in UV-curable resin were used for a transparent conductive film. The emeraldine-salt PANI (ES-PANI) nanofibers were prepared by chemical oxidation polymerization of aniline, which could be changed into emeraldine-base PANI by dedoping. EB-PANI nanofibers as a precursor for conductive fillers were thereby transformed into re-dpoed PANI (rES-PANI) by dodecylbenzenesulfonic acid in the UV-curable resin solution. rES-PANI nanofibers have high conductivity and long-term stability in the solution without a defect of nanostructure. The resulting conductive resin solution was proved to be highly stable where no precipitation of rES-PANI fillers was observed over a period of 3 months. The transparent film was spin-casted on a poly(methyl methacrylate) sheet of thickness ca. $5{\mu}m$. A surface resistance of $6.5{\times}10^8{\Omega}/sq$ and transmittance at 550 nm of 91.1% were obtained for the film prepared with a concentration of 1.4 wt% rES-PANI nanofibers in the solution. This transformation process of rES-PANI from ES-PANI by dedoping-redoping can be an alternative method for the preparation of an antistatic protection film with controllable surface resistance and optical transparencies with the PANI concentration in UV-curable solution.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.40-45
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• 2010

Entrapment of hydrophobic flavonoid luteolin into ethosome was carried out for improving its stability and making practical application in the field of drug and cosmetics. The formation of liquid crystalline phase and its thermal properties were investigated by polarized optical microscopy and DSC. The phase inversion from W/O to W/O/W was detected by conductivity change with the addition of PBS buffer solution into the ethanol-dissolved lecithin mixture. The particle size change of ethosome with constituent composition was examined, which showed that the incorporation of luteolin into lecithin up to 10% had little effect on the size of ethosome. Enhancement of stability of luteolin by entrapment into ethosome was verified through DPPH test. The stabilization efficacy of ethosome was improved further by the addition of tocopherol.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.90.1-90.1
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• 2010

Due to the rapidly diminishing energy sources and higher energy production cost, the interest in dye-sensitized solar cells (DSSCs) has been increasing dramatically in recent years. A typical DSSC is constructed of wide band gap semiconductor electrode such as $TiO_2$ or ZnO that are anchored by light-harvesting sensitizer dyes and surrounded by a liquid electrolyte with a iodide ion/triiodide ion redox couple. DSSCs based on one-dimensional nano-structures, such as ZnO nanorods, have been recently attracting increasing attention due to their excellent electrical conductivity, high optical transmittance, diverse and abundant configurations, direct band gap, absence of toxicity, large exiton binding energy, etc. However, solar-to-electrical conversion performances of DSSCs composed of ZnO n-type photo electrode compared with that of $TiO_2$ are not satisfactory. An important reason for the low photovoltaic performance is the dissolution of $Zn^{2+}$ by the adsorption of acidic dye followed by the formation of agglomerates with dye molecules which could block the I-diffusion pathway into the dye molecule on the ZnO surface. In this paper, we prepared the DSSC with the ZnO electrode using the chemical bath deposition (CBD) method under low temperature condition (< $100^{\circ}C$). It was demonstrated that the ZnO seed layers played an important role on the formation of the ZnO nanostructures using CBD. To achieve truly low-temperature growth of the ZnO nanostructures on the substrates, a two-step method was developed and optimized in the present work. Firstly, ZnO seed layer was prepared on the FTO substrate through the spin-coating method. Secondly, the deposited ZnO seed substrate was immersed into an aqueous solution of 0.25M zinc nitrate hexahydrate and 0.25M hexamethylenetetramine at $90^{\circ}C$ for hydrothermal reaction several times.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2067-2072
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• 2013

Hydrogen ($H_2$) treatment using a two-step $TiO_2$ nanotube (TONT) film was performed under various annealing temperatures from $350^{\circ}C$ to $550^{\circ}C$ and significantly influenced the extent of hydrogen treatment in the film. Compared with pure TONT films, the hydrogen-treated TONT (H:TONT) film showed substantial improvement of material features from structural, optical and electronic aspects. In particular, the extent of enhancement was remarkable with increasing annealing temperature. Light absorption by the H:TONT film extended toward the visible region, which was attributable to the formation of sub-band-gap states between the conduction and valence bands, resulting from oxygen vacancies due to the $H_2$ treatment. This increased donor concentration about 1.5 times higher and improved electrical conductivity of the TONT films. Based on these analyses and results, photoelectrochemical (PEC) performance was evaluated and showed that the H:TONT film prepared at $550^{\circ}C$ exhibited optimal PEC performance. Approximately twice higher photocurrent density of 0.967 $mA/cm^2$ at 0.32 V vs. NHE was achieved for the H:TONT film ($550^{\circ}C$) versus 0.43 $mA/cm^2$ for the pure TONT film. Moreover, the solar-to-hydrogen efficiency (STH, ${\eta}$) of the H:TONT film was 0.95%, whereas a 0.52% STH efficiency was acquired for the TONT film. These results demonstrate that hydrogen treatment of TONT film is a simple and effective tool to enhance PEC performance with modifying the properties of the original material.