• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.785-787
• /
• 2002

Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 춘계학술대회
• /
• pp.1627-1632
• /
• 2003

The effect of (1) phonon dispersion in thermal conductivity model and (2) the differentiation of group velocity and phase velocity for Ge is examined. The results show drastic change of thermal conductivity regardless of using same relaxation time model. Also the contribution of transverse acoustic (TA) phonon and longitudinal acoustic (LA) phonon is changed by considering more rigorous dispersion model. Holland model underestimates the scattering rate for high frequency TA, so misleading conclusion, i.e. TA is dominant heat transfer mode at high temperature. But the actual reduction of thermal conductivity is much larger than the estimation by Holland model and high frequency TA is no more dominant heat transfer mode. Another heat transfer mechanism may exist for high temperature. Two possible explanations are (1) high frequency LA by Umklapp scattering and (2) optical phonon.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.234-237
• /
• 1996

The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2008년도 동계학술발표회 논문집
• /
• pp.97-98
• /
• 2008

• 한국광학회:학술대회논문집
• /
• 한국광학회 2008년도 하계학술발표회 논문집
• /
• pp.435-436
• /
• 2008

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권1호
• /
• pp.1-7
• /
• 2005

Thin films of vanadium oxide(VO/sub x/) were deposited by r.f. magnetron sputtering from V₂O/sub 5/ target with oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% and in situ annealed in vacuum at 400℃ for 1h and 4h. Crystal structure, chemical composition, molecular structure, optical and electrical properties of films were characterized through XRD, XPS, RBS, FTIR, optical absorption and electrical conductivity measurements. The films as-deposited are amorphous, but 0%O₂ films annealed for time longer than 4h and 8% O₂ films annealed for time longer than 1h are polycrystalline. As the oxygen partial pressure is increased the films become more stoichiometric V₂O/sub 5/. When annealed at 400℃, the as-deposited films are reduced to a lower oxide. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Electrical conductivity and thermal activation energy are increased with increasing the annealing time and with decreasing the oxygen partial pressure.

• 대한금속재료학회지
• /
• 제50권11호
• /
• pp.847-854
• /
• 2012

Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

• 한국세라믹학회지
• /
• 제49권5호
• /
• pp.399-403
• /
• 2012

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.

• 한국세라믹학회지
• /
• 제49권5호
• /
• pp.448-453
• /
• 2012

Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.

• 한국전기전자재료학회논문지
• /
• 제14권8호
• /
• pp.618-621
• /
• 2001

Plate-type $\beta$-FeSi$_2$single crystals were grown using FeSi$_2$, Fe, and Si as starting materials by the chemical transport reaction method. The $\beta$-FeSi$_2$single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the $\beta$-FeSi$_2$ single crystal. The electrical resistivity values was 1.608Ωcm and electron mobility was 3x10$^{-1}$ $\textrm{cm}^2$/V.sec at room temperature.