• Journal of Information Display
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• v.6 no.3
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• pp.1-5
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• 2005

The recent Bistable Nematic ($BiNem^{(R)}$) LCD technology presents long term bistability, high level passive matrix multiplexing, gray levels capabilities and high optical quality. The $BiNem^{(R)}$ device, based on anchoring breaking, needs specific low anchoring strength materials - alignment layers and liquid crystal mixtures. We present here our approach to develop nematic mixtures with wide enough temperature range and low zenithal anchoring energy.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.212-216
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• 2016

A reflective electronic display that uses negatively and positively charged particles has excellent bistability, a welldefined threshold voltage, and an extremely fast response time in comparison with other reflective displays. This type of display shows images through the movement of charged particles whose motion depends on the value of q/m (charge per mass for a particle). However, the ratio q/m can easily be changed by the forces acting on the charged particles in a cell of the panel and by friction that occurs after mixing oppositely charged particles and in the particle-insertion process. In this study, we propose a method to determine the appropriate range of q/m by using the reflectivity and response time of charged particles to modify q/m. In this manner, the electrical and optical properties of reflective displays are improved.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.350-353
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• 2000

Thermotropic liquid crystalline polymer(LCP) has been used for the alignment of ferroelectric liquid crystal (FLC) molecules and the surface morphology of the resulting polymeric thin film has been observed by atomic forced microscope. The uniform alignment of FLC molecules on the surface of thermotropic LCP thin film was obtained even though microgroove structures were not formed. The contrast ratio of sample cell was about 23:1 including two polarizers and a good memory capability due to the bistability of FLC was obtained. After AC field stabilization at 20V, the typical stripe-shaped patterns appeared.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.669-673
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• 2011

The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.