• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.199-199
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• 2013

최근 단파장 광전 소자와 고출력 고주파 전자 소자에 대한 수요 때문에 넓은 밴드갭 에너지를 갖는 반도체에 관심이 많다. 이중에서, ZnO는 우수한 화학 및 역학적 안정성, 수소 플라즈마 내구성과 저가 제조의 장점 때문에 광전자 소자 개발 분야에 적합한 산화물 투명 전극으로 관심을 끌고 있다. 불순물이 도핑되지 않은 ZnO는 본질적으로 산소 빈자리 (vacancy)와 아연 격자틈새 (interstitial)와 같은 자체의 결함으로 말미암아 n형의 극성을 갖기 때문에, 반도체 소자로 응용하기 위해서는 도핑 운반자의 농도와 전도성을 제어하는 것이 필요하다. 본 연구에서는 박막 제조시 제어성, 안정성과 용이하게 성장이 가능한 졸겔 (sol-gel) 방법을 사용하여 사파이어와 석영 기판 위에 Cu가 도핑된 ZnO 박막을 성장시켰으며, 그것의 구조, 표면 형상, 평균 투과율, 광학 밴드갭 에너지를 계산하였다. 특히, Cu의 몰 비를 0, 0.01, 0.03, 0.05, 0.07, 0.1 mol로 변화시키면서 ZnO:Cu 박막을 성장시켰다. ZnO:Cu 졸은 zinc acetate dihydrate, 2-methoxyethanol (용매), momoethanolamine (MEA, 안정제)을 사용하여 제조하였다. 상온에서 2-methoxyethanol과 MEA가 혼합된 용액에 zinc acetate dihydrate (Zn)을 용해시켰다. 이때 MEA와 Zn의 몰 비는 1로 유지하였다. 이 용액을 $60^{\circ}C$ 가열판 (hot plate)에서 24 h 동안 자석으로 휘젓으며 혼합하여 맑고 균일한 용액을 얻었다. 이 용액을 3000 rpm 속도로 회전하는 스핀 코터기의 상부에 장착된 사파이어와 석영 기판 위에 주사기 (syringe)를 사용하여 한 방울 떨어뜨려 30 s 동안 스핀한 다음에, 용매를 증발시키고 유기물 찌꺼기를 제거하기 위하여 $300^{\circ}C$에서 10분 동안 건조시킨다. 기판 위에 코팅하는 작업에서 부터 건조 작업까지를 10회 반복한 다음에, 1 h 동안 전기로에 장입하여 석영 기판 위에 증착된 시료는 $550^{\circ}C$에서, 사파이어 기판은 $700^{\circ}C$에서 열처리를 수행하였다. Cu의 몰 비 0, 0.01, 0.03, 0.05, 0.07, 1로 성장된 ZnO:Cu 박막에 대한 x선 회절 분석의 결과에 의하면, 모든 ZnO:Cu 박막의 경우에 관측된 34.3o의 피크는 ZnO (002) 면에서 발생된 회절 패턴을 나타낸다. 이것은 JCPDS #80-0075에 제시된 회절상과 일치하였으며, ZnO:Cu 박막이 기판에 수직인 c-축을 따라 우선 배향됨을 나타낸다. 사파이어 기판 위에 증착된 박막의 경우에, Cu의 몰 비가 점점 증가함에 따라(002)면 회절 피크의 세기는 전반적으로 증가하여 0.07 mol에서 최대를 나타내었으나, 석영 기판 위에 증착된 박막의 경우에는 0.05 mol에서 최대를 보였다. 외선-가시광 분광계를 사용하여 서로 다른 Cu의 몰 비로 성장된 ZnO:Cu 박막에서 광학 흡수율 (absorbance) 스펙트럼을 측정하였으며, 이 데이터를 사용하여 평균 투과율을 계산한 결과, 투과율은 Cu의 몰 비에 따라 현저한 차이를 나타내었다. Cu의 몰 비가 0.07 mol일 때 평균 투과율은 80%로 가장 높았으며, 0.03 mol에서는 30%로 최소이었다. 광학밴드갭 에너지는 Tauc 모델을 사용하여 계산하였고, 결정 입자의 형상과 크기와의 상관 관계를 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.5
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• pp.3192-3202
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• 2014

This study has its purposes on analyzing specific features of the elements according to scales of 32 main buddhist sancta among wooden temples with gable roof that are nationally designated as cultural assets, and analyzing influences and proportional relations between main and submaterials, so that it could be basic and objective data for restore and repair cultural assets in the future. Results of the study are following. First of all, the average plane proportion of doritong (facade) and yangtong (side) in 3-room building is about 1.31:1, while it is 1.70:1 in 5-room building. Secondly, as a result of analyzing the locational proportion and thickness of pillars at each location, floor room turned out to have wider space between pillars than that of edge room or side room in both cases of 3 and 5-room buildings. In the mean time, for the average thickness of the pillars in 3-room building, it was 491mm for corner pillars, 433mm for general pillars in cases of 3-room building, while it was 595 and 511mm respectively in cases of 5-room building. The reason why corner pillars are 60~80mm thicker than general ones in average, is determined to considered structural stability and optical illusion. For the third, as a result of analyzing the influences on pillar thickness, eaves projection and eaves height according to the scale(dimension) of buildings, 3-room buildings have outstanding correlation as its scale(dimension) goes bigger, while 5-room ones are not very much influenced by its scale(dimension). For the fourth, as a result of the relation between pillars and eaves, both of 3 and 5-room buildings have longer-projected and higher eaves as their pillars go taller; especially height of eaves turns out to have very close relation between length of pillars. In addition to that, both of 3 and 5-room buildings have much projected eaves as the eaves go higher.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.63-64
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• 1996

The nature of distant faint blue field galaxies remains a mystery, despite the fact that much attention has been devoted to this subject in the last decade. Galaxy counts, particularly those in the optical and near ultraviolet bandpasses, have been demonstrated to be well in excess of those expected in the 'no-evolution' scenario. This has usually been taken to imply that galaxies were brighter in the past, presumably due to a higher rate of star formation. More recently, redshift surveys of galaxies as faint as B$\~$24 have shown that the mean redshift of faint blue galaxies is lower than that predicted by standard evolutionary models (de-signed to fit the galaxy counts). The galaxy number count data and redshift data suggest that evolutionary effects are most prominent at the faint end of the galaxy luminosity function. While these data constrain the form of evolution of the overall luminosity function, they do not constrain evolution in individual galaxies. We are carrying out a series of observations as part of a long-term program aimed at a better understanding of the nature and amount of luminosity evolution in individual galaxies. Our study uses the luminosity-linewidth relation (Tully-Fisher relation) for disk galaxies as a tool to study luminosity evolution. Several studies of a related nature are being carried out by other groups. A specific experiment to test a 'no-evolution' hypothesis is presented here. We have used the AUTOFIB multifibre spectro-graph on the 4-metre Anglo-Australian Telescope (AAT) and the Rutgers Fabry-Perot imager on the Cerro Tolalo lnteramerican Observatory (CTIO) 4-metre tele-scope to measure the internal kinematics of a representative sample of faint blue field galaxies in the red-shift range z = 0.15-0.4. The emission line profiles of [OII] and [OIII] in a typical sample galaxy are significantly broader than the instrumental resolution (100-120 km $s^{-l}$), and it is possible to make a reliable de-termination of the linewidth. Detailed and realistic simulations based on the properties of nearby, low-luminosity spirals are used to convert the measured linewidth into an estimate of the characteristic rotation speed, making statistical corrections for the effects of inclination, non-uniform distribution of ionized gas, rotation curve shape, finite fibre aperture, etc.. The (corrected) mean characteristic rotation speed for our distant galaxy sample is compared to the mean rotation speed of local galaxies of comparable blue luminosity and colour. The typical galaxy in our distant sample has a B-band luminosity of about 0.25 L$\ast$ and a colour that corresponds to the Sb-Sd/Im range of Hub-ble types. Details of the AUTOFIB fibre spectroscopic study are described by Rix et al. (1996). Follow-up deep near infrared imaging with the 10-metre Keck tele-scope+ NIRC combination and high angular resolution imaging with the Hubble Space Telescope's WFPC2 are being used to determine the structural and orientation parameters of galaxies on an individual basis. This information is being combined with the spatially resolved CTIO Fabry-Perot data to study the internal kinematics of distant galaxies (Ing et al. 1996). The two main questions addressed by these (preliminary studies) are: 1. Do galaxies of a given luminosity and colour have the same characteristic rotation speed in the distant and local Universe? The distant galaxies in our AUTOFIB sample have a mean characteristic rotation speed of $\~$70 km $s^{-l}$ after correction for measurement bias (Fig. 1); this is inconsistent with the characteristic rotation speed of local galaxies of comparable photometric proper-ties (105 km $s^{-l}$) at the > $99\%$ significance level (Fig. 2). A straightforward explanation for this discrepancy is that faint blue galaxies were about 1-1.5 mag brighter (in the B band) at z $\~$ 0.25 than their present-day counterparts. 2. What is the nature of the internal kinematics of faint field galaxies? The linewidths of these faint galaxies appear to be dominated by the global disk rotation. The larger galaxies in our sample are about 2"-.5" in diameter so one can get direct insight into the nature of their internal velocity field from the $\~$ I" seeing CTIO Fabry-Perot data. A montage of Fabry-Perot data is shown in Fig. 3. The linewidths are too large (by. $5\sigma$) to be caused by turbulence in giant HII regions.