• Journal of Radiation Protection and Research
• /
• v.41 no.2
• /
• pp.167-171
• /
• 2016

Background: TlBr is of considerable technological importance for radiation detection applications where detecting high-energy photons such as X-rays and ${\gamma}$-rays are of prime importance. However, there were few reports on investigating optical properties of TlBr itself for deeper understandings of this material and for making better radiation detection devices. Thus, in this paper, we report on the optical characterizations of TlBr single crystals. Spectroscopic ellipsometry (SE) and photoluminescence (PL) measurements at RT were performed for this work. Materials and Methods: A 2-inch TlBr single crystalline ingot was grown by using the vertical Bridgman furnace. SE measurements were performed at RT within the photon energy range from 1.1 to 6.5 eV. PL measurements were performed at RT by using a home-made PL system equipped with a 266 nm-laser and a spectrometer. Results and Discussion: Dielectric responses from SE analysis were shown to be slightly different among the different samples possibly due to the different structural/optical properties. Also from the PL measurements, it was observed that the peak intensities of the middle samples were significantly higher than those of the other two samples. With the given values for permittivity of free space (${\varepsilon}_0=8.854{\times}10^{-12}F{\cdot}m^{-1}$), thickness (d = 1 mm), and area ($A=10{\times}10mm^2$) of the TlBr sample, capacitances of TlBr were 6.9 pF (at $h{\nu}=3eV$) and 4.4 pF (at $h{\nu}=6eV$), respectively. Conclusion: SE and PL measurement and analysis were performed to characterize TlBr samples from the optical perspective. It was observed that dielectric responses of different TlBr samples were slightly different due to the different material properties. PL measurements showed that the middle sample exhibited much stronger PL emission peaks due to the better material quality. From the SE analysis, optical, dielectric constants were extracted, and calculated capacitances were in the few pF range.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3453-3458
• /
• 2011

The $Mg_xZn_{1-x}O$ thin films with the various content ratio ranging from 0 to 0.4 were prepared by sol-gel spincoating method. To investigate the effects of content ratio on the structural and optical properties of the $Mg_xZn_{1-x}O$ thin films, scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out. With increase in the content ratio, the grain size of the $Mg_xZn_{1-x}O$ thin films was increased, however, at the content ratio above 0.2, MgO particles with cubic structure were formed on the surface of the $Mg_xZn_{1-x}O$ thin films, indicating that the Mg content exceeded its solubility limit in the thin films. The residual stress of the $Mg_xZn_{1-x}O$ thin films is increased with increase in the Mg mole fraction. In the PL investigations, the bandgap and the activation energy of the $Mg_xZn_{1-x}O$ thin films was increased with the Mg mole fraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.42-42
• /
• 2010

Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.

• Applied Microscopy
• /
• v.45 no.2
• /
• pp.52-57
• /
• 2015

Bulk metallic glass (BMG) shows higth strength, high elastic limit, corrosion resistance and good wear resistance and soft magnetic properties and has been considering as a candidate for new structural materials. But they show limited macroscopic plasticity and lack of tensile ductility due to highly localized shear deformation, which should be solved for real structural application. In this paper researches on the enhancement of plasticity of BMG were reviewed briefly. Introducing heterogeneous structure in glass is effective to induce more shear transformation zones (STZs) active for multiple shear band initiation and also to block the propagating shear band. Several methods such as BMG alloy design for high Poisson's ratio, addition of alloying element having positive heat of mixing, pre-straining BMG and variety of BMG composites have been developed for homogenous distribution of locally weak region, where local strain can be initiated. Therefore enhancement of plasticity of BMG is normally accompanied with some penalty of strength loss.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.7
• /
• pp.7-14
• /
• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.356-360
• /
• 2011

Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.

• Journal of Surface Science and Engineering
• /
• v.42 no.3
• /
• pp.122-127
• /
• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.

• Polymer(Korea)
• /
• v.38 no.2
• /
• pp.188-192
• /
• 2014

In this work, it is possible to simply improve the molecular ordering of a conjugated polymer thin film by dipping into poor solvent. The structural order, optical, and electrical properties of poly(3-hexylthiophene) (P3HT) films were profoundly influenced by dipping time and solubility of solvent. Especially the dipping time in methylene chloride was controlled to efficiently improve the molecular ordering of the P3HT. The correlation between the structural order and the electrical properties was used to optimize the dipping time in the appropriate solvent.

• Nuclear Engineering and Technology
• /
• v.56 no.9
• /
• pp.3796-3803
• /
• 2024

By employing the melt-quenching technique, the ZnO-SrO-B₂O₃-PbO (ZSBP) glasses have been successfully fabricated. The derivative of Absorption Spectra Fitting (DASF) method was used to study the energy band gap (E_g) of the glasses which decreases from 3.57 eV to 3.39 eV. The structural properties have been studied using the Raman spectroscopy. The glass transition temperature (T_g) decreases with increase in concentration of the lead oxide. The current study examines the radiation shielding properties at 30.80-444 keV. The addition of PbO to the glasses resulted in a proportionate increase in the mass attenuation coefficient (MAC), suggesting a diminishing tendency in radiation transmission. At 30.80 keV, the MAC values are extremely high and range from 18.06 to 21.11 cm²/g. As density rises, the half value layer (HVL) decreases. In addition, the average HVL (${\overline{HVL}}$) decreases. The glass thickness required to reduce the radiation intensity to 90 %, 50 %, 25 %, and 10 % of its initial value is investigated at an energy of 35.80 keV. The T90 %, T50 %, T25 %, and T10 % values are 0.0020, 0.0132, 0.0264, and 0.0439 cm, respectively. The results suggest that a greater thickness of the radiation barrier is necessary to attain the necessary degree of attenuation.

• Korean Journal of Materials Research
• /
• v.21 no.3
• /
• pp.144-148
• /
• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.