• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.269-275
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• 2014

In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.76-80
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• 2008

In this study, we synthesized ATO films using RF magnetron sputtering method consisted of $SnO_2$ target added Sb of 6 wt% and investigated the effect of $O_2$ on structural, electrical, and optical properties of ATO films. As a result, in case of $O_2$/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about $8{\times}10^{-3}[{\Omega}-cm]$, the transmittance of 85.17%, and retile structure.

• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.360-365
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• 2017

In this study, a heat treatment process was applied to ZnS nano-powder to improve the optical properties of ZnS ceramic, and the characteristics of heat treatment time were studied. The ZnS nano-powders were synthesized by hydrothermal synthesis. The heat treatment was carried out at $550^{\circ}C$ for 0.5, 1, 2, and 4 hours in a vacuum atmosphere ($10^{-2}torr$). X-ray diffraction and scanning electron microscope analyzes confirmed the change of crystal phase and grain size to confirm the structural change with heat treatment time. The heat treated ZnS nano-powder was sintered by hot pressing, and the change of optical properties of the ZnS ceramic was analyzed by infrared spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Journal of the Korean Society of Visualization
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• v.22 no.1
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• pp.18-27
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• 2024

A series of shock wave pulses with Mach number 2.2 of 100, 200, and 300 shocks were applied to lead sulfide (PbS) nanomaterials at intervals of 5 sec per shock pulse. To investigate the crystallographic, electronic, and magnetic phase stabilities, powder X-ray diffractometry (XRD), diffused reflectance spectroscopy (DRS), and vibrating-sample magnetometry (VSM) were employed. The material exhibited a rock salt structure (NaCl-type structure); XRD results indicated that material is monoclinic with space group C121 (5). Further, XRD results showed shifts due to lattice contraction and expansion when material was subjected to shock wave pulses, indicating stable material structure. Based on the data obtained, we believe that the PbS material is a good choice for high-pressure, high-temperature, and aerospace applications due to its superior shock resistance characteristics.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.49-51
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• 2006

Ternary chalcopyrite $CuInS_2$ thin film material is very promising for photovoltaic. Power generation because of its excellent optical and semiconductor properties, $CuInS_2$ thin films were performed from S/In/Cu/SLG stacked elemental layer (SEL) method with post annealing treatment. $CuInS_2$ thin films were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated. Analysis of the optical energy band gap of $CuInS_2$ value of l.5eV interior and exterior.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1735-1736
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• 2006

As developing the information society, Lighting Emitted diode(LED) which is light source for illumination of next generation is attracted public attention. LED have many problem as narrow light view angle, high price, drift phenomenon of color coordinate, high heating problem for lower power, lower weight and small size. So, many researches have continued in a illumination as LED module type. in this problem, heating problem is very important and difficult and that is caused in decreasing phenomenon of brightness and drift phenomenon of color coordinate. so the problem of heating is urgent question for illumination of LED. In this paper, structural design of PCB changed as two type for solving the heating problem. also the properties of heating is analysed and optical properties is measured with heating image camera and spectrometer according to change in this design.