• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.94.2-94.2
• /
• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.7
• /
• pp.491-495
• /
• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.

• Korean Journal of Materials Research
• /
• v.25 no.5
• /
• pp.247-252
• /
• 2015

The effect of precursor concentration on the structural, morphological, and optical properties of $TiO_2$nano-flowers was investigated in this study. An increase in crystallite size was observed with an increase in the concentration of the precursor (titanium butoxide). The FE-SEM micrographs of the as-prepared samples show a three-dimensional flower-like morphology. The flowers consist of several nanorods coming out of a single core and have very sharp edges. Also, the variation in the aspect ratio of the nanostructure was observed with the concentration of the precursor. The photocatalytic properties of the samples show that the sample that has a high aspect ratio (AR~9) has a much better photocatalytic activity compared to the nano-crystal with a low aspect ratio (AR~6.1). It is believed that the excellent photocatalytic performance and short time synthesis of $TiO_2$nano-flowers using the microwave hydrothermal method can have potential applications in the field of photocatalysis.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1343_1344
• /
• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Corning glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.183-189
• /
• 2013

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.19 no.3
• /
• pp.388-393
• /
• 2010

In recent years the research has been focused on the preparation of special glasses, i.e., chalcogenide and heavy metal oxide ones that can transmit optical radiation above 2 um and also other optical parameters exceed those of silica based glasses. The attention in this paper is focused on chalcogenide glasses, on preparation of high quality base glass, for an application in infrared optical product design and manufacture. The amorphous materials of As-Se and Ge-As-Se chalcogenides were prepared by a standard melt-quenching technique. The compositions were mesaured by ICP-AES and EPMA, and structural and thermal properties were studied through various annealing processes. Several anomalies of glass transition and crystallization were observed in the DSC/DTA/TG results of the chalcogenide glass.

• Journal of Surface Science and Engineering
• /
• v.52 no.6
• /
• pp.289-292
• /
• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.77-78
• /
• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• Korean Journal of Materials Research
• /
• v.19 no.12
• /
• pp.657-660
• /
• 2009

Optical characteristics and structural changes depending on CuO content in phosphate glasses that are used in near-infrared (near-IR) filters were investigated. With phosphate glasses that contain 1-9 mol% CuO, changes in optical transmittance, optical absorption, and color coordinate were measured with a UV-VIS spectrophotometer. An XPS (X-ray photoelectron spectroscopy) analysis was performed to determine valence of copper ion that influences optical characteristics in near-IR filter glasses. Structural changes in glasses depending on CuO content were also analyzed by FT-IR (Fourier transform infrared) and Raman spectrophotometers. From the UV-VIS spectrophotometer results, strong absorption peaks at 220 & 900 nm were found and transmittance was decreased. The color coordinates of the glasses were shifted to the green color direction with CuO addition for increasing absorption of long wavelength range spectra, in spite of the amount of $Cu^{2+}$, which gives a blue color to glasses, and which was increased in XPS results. Also, structural de-polymerization of glasses with CuO addition were found by FT-IR and Raman results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.307-308
• /
• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.