• 대한전자공학회논문지SD
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• 제43권7호
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• pp.1-6
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• 2006

본 연구에서는 광 논리 및 광 접속에 응용할 수 있는 GaAs/AlGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 VCSEL(vertical-cavity surface-emitting laser diode)을 응용하여, 활성층 위, 아래에 1/4 파장 거울층(quarter wavelength reflector stacks)을 제작함으로서 본 구조에서 최초의 레이징 특성을 구현하였고, 그 특성을 측정, 분석하였다. 스위칭 특성을 알아보기 위하여 순방향 전압에서는 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서는 완전 공핍 전압을 모의실험으로 알아보았다. 모의실험을 바탕으로 설계, 제작한 VCL-DOT(Vertical Cavity Laser - Depleted Optical Thyristor)의 스위칭 전압과 전류는 5.24 V, $5{\mu}A$ 이고, 홀딩 전압과 전류는 각각 1.50 V, $100{\mu}A$가 나왔다. 측정된 레이징 문턱 전류는 0.65 mA 이고, 출력 파장은 854.5 nm의 레이징 특성을 확인하였다.

• 전자공학회논문지
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• 제49권11호
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• pp.74-85
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• 2012

본 논문에서는 이종 입체 카메라 시스템의 광학적 특성을 일치화하여 동일한 품질의 입체영상을 생성하는 기술을 제안한다. 이종 입체 카메라의 광학적 특성에는 크게 줌, 심도, 초점이 있으며 이들의 차이는 결과적으로 입체영상의 품질에 영향을 주어 사람의 시각 피로를 발생시키는 요인이 된다. 본 논문에서 제안하는 광학 특성 일치화 기술은 이종 카메라의 줌 영상을 일치한 후 동일 피사체에 대해 초점을 맞추고 심도를 일치화하는 과정으로 이루어진다. 이를 위하여 이종 입체 카메라의 줌 영상의 비교 알고리즘을 통하여 줌 렌즈에 대한 룩업테이블(LUT)을 작성하였다. 그리고 입체 영상의 에지(edge)에서 초점 정보를 추출하여 심도를 일치화하였다. 광학적 특성 일치화 실험을 위하여 직교방식의 리그를 제작하고 서로 다른 사양의 HD급 카메라를 이용하여 입체 카메라 장치를 구성하였다. 줌 일치화 및 심도 일치화에 대한 실험 결과로 시각 피로를 줄일 수 있는 입체 영상 생성이 가능함을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.50-50
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• 2009

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.269-275
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• 2014

In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.247-247
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• 2008

In this work, VOx thin films have been deposited by DC magnetron sputtering method on glass substrate using argon and oxygen gases. We examined the effects of the post annealing temperature on the structural, optical, and electrical variations of VOx films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using RTA equipment in air ambient. The thickness of the film and interface between film and substrate were observed by field emission scanning electron microscopy (FESEM). To analysis the structural properties of VOx with various annealng temperatures, we used XRD method. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.808-811
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• 2008

Optical and mechanical properties of diamond-like carbon (DLC) films synthesized by RF plasma enhanced chemical vapor deposition were investigated as a function the C/H ratio in gas mixture. The C/H ratio was varied from 6 to 10 %, adjusting the amount of $CH_4$ and $H_2$ as the source gas. The optical and mechanical properties of DLC films were characterized by UV spectrometer, Ellipsometer and Nano-indenter. The change of the C/H ratio during synthesis of DLC films had many effects on the growth rate, transmittance, refractive index and hardness. The growth rate of the films increased exponentially with the increase in C/H ratio. The hardness of the films showed the tendency to improve with increasing C/H ratio, whereas the transmittance decreased. The refractive index was varied from 2.03 to 2.17, and these refractive indexes close to 2.0 indicates that it can be applied to Si-based solar cell.

• Journal of Magnetics
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• 제12권3호
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• pp.129-132
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• 2007

Bismuth-substituted yttrium iron garnet (Bi:YIG, $Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with aerosol deposition method and their magnetic and optical properties were investigated as a function of annealing temperature. Since the ceramic films deposited with aerosol deposition method have not a perfect crystal structure due to non-uniform internal stress occurred by mechanical collision during their deposition, the post annealing could be a key process to release its internal stress and to improve its micro structure for optimizing the magnetic and magneto-optic properties of films. The crystallinity of Bi: YIG film was improved with increase of annealing temperature, and the saturation magnetization increased up to 87 emu/cc at $800^{\circ}C$. The Faraday rotation increased up to $1.4deg/{\mu}m$ by annealing at $700^{\circ}C$ around the wavelength of $0.5{\mu}m$. The optical transmittance of the Bi:YIG film was also improved in visible region.