• 제목/요약/키워드: Optical and electronic properties

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$Er^{+3}$ 첨가된 인산염 레이저 유리의 탈 수산기 영향에 관한 분광학적 특성 (Dehydration effects on spectroscopic properties of $Er^{+3}$ doped phosphate laser Glass)

  • 조규성;박완수;김종수;김정돈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.335-335
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    • 2008
  • 눈에 안정한(1.53um) 인산염 레이저 유리를 제조하기 위한 기본 조성 (mole%)은 $55P_2O_5\cdot24BaO\cdot10K_2O\cdot4Al_2O_3\cdot6Yb_2O_3$로 하고, 활성 이온은 $Er^{+3}$로, sensitizer로는 $Cr^{+3}(Yb^{+3})$을 사용하였다. 혼합된 원료 조성은 대기와 원료로부터 혼입되는 OH group을 제거하기 위하여 open 시스템에서 가스 버블을 공급하였으며, 용융물에 공급된 시간 변화에 따라 분광학적 특성 변화를 조사하였다. OH oscillations linear 에 의해 quenching된 $Er^{+3}$ 형광방출 확률은 $3500cm^{-1}$ 에서 OH stretching vibration band의 흡수계수에 의존하고 있으며, 이때 $Er^{+3}$의 농도는 $1.6\times10^{19}$에서 $21.2\times10^{19}$ ion/$cm^2$ 범위에서 존재하였다.

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아르곤 플라즈마를 이용하여 유리기판에 증착된 PTFE 박막의 초친수 특성 연구 (Hydrophobic Properties of PTFE Film Deposited on Glass Surface Etched by Ar-plasma)

  • 이병로;배강;김화민
    • 한국전기전자재료학회논문지
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    • 제27권8호
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    • pp.516-521
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    • 2014
  • An excellent hydrophobic surface has a high contact angle over 147 degree and the contact angle hysteresis below $5^0$ was produced by using roughness combined with hydrophobic PTFE coatings, which were also confirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched by Ar-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before or after PTFE coating on the plasma etched glass surface, based on Wensel's model were calculated, which agrees well with the dependence of the contact angle on the roughness factor is predicted by Wensel's model. The PTFE films deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etched Ar-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on the sputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. In particular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20 sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.

이온 빔 조사된 SiNx 박막의 액정 배향 효과에 관한 연구 (Investigation on Liquid Crystal Alignment Effects of SiNx Thin Film Irradiated by Ion Beam)

  • 이상극;김영환;김병용;한진우;강동훈;김종환;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.398-398
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    • 2007
  • Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

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ZnS:Cu-PDMS 기반 기계 발광 유연 나노 복합체의 CNT 혼입에 따른 전기 및 광학적 특성 향상에 대한 연구 (Enhancing Electrical and Optical Properties in Mechanoluminescent Flexible Nanocomposite Based on ZnS:Cu-PDMS by Mixing CNTs)

  • 김태민;김현우;윤종혁;김미희;전다빈;최대철;이성남
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.531-535
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    • 2023
  • Mechanoluminescence (ML) is a phenomenon where the application of mechanical force to ML materials generates an electric field and produces light, holding significant promise as an eco-friendly technology. However, challenges in commercializing ML technology has arisen due to its low brightness and short luminous lifetime. To address this, in this work, we enhance ML efficiency by mixing carbon nanotubes (CNTs) into a ZnS: Cu embedded in a polydimethylsiloxane composite ML device. The inclusion of CNTs boosts ML intensity by 98% compared to devices without CNTs, as the increasing CNT fraction elevates conductivity, thereby amplifying ML intensity. However, this increase in CNT fraction also leads to enhanced light absorption within the device. Consequently, we observe a trend where ML intensity rises initially but declines beyond a CNT fraction of 0.0015 wt%. Based on these findings, we anticipate that our research will make valuable contributions to the advancement of electrical powerless mechanoluminescent technology.

콜로이드 합성법에 의한 HgTe 양자점의 제조와 특성 분석 (Colloidal synthesis of IR-Iuminescent HgTe quantum dots)

  • 송현우;조경아;김현석;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.31-34
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    • 2002
  • HgTe quantum dots were synthesized in aqueous solution at room temperature by colloidal method. The synthesized materials were identified to be zincblende cubic structured HgTe quantum dots by X-ray diffraction and transmission electron microscopy image revealed that these quantum dots are agglomerate of a individual particle. The colloidally prepared HgTe quantum dots have the sphere-like shape with a diameter of approximately 4 nm. The optical properties of the HgTe quantum dots were investigated with photoluminescence(PL). The PL appears in the near-infrared region, which represent a dramatic shift from bulk HgTe behavior. The analytic results revealed that HgTe quantum dots have the broad size distribution, as PL emission spectrum covers the spectral region from 900 to 1400 nm. In this study, the factors affecting PL of HgTe quantum dots and particle size distributiont are described.會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ఀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫ᜀĀ저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ఀĀ저會Ā저ꡉ?⨀1岒Ā저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග嘀Ā切會Ā切끊?⨀⣟ගĀ搀會Ā搀ࡋ?⨀큭킢Ā저會Ā저恋?⨀桮킢Ā저會Ā저롋?⨀⣅沥ࠀĀࠀ會Āࠀ၌?⨀샅沥Ā저會Ā저桌?⨀壆沥ሀĀ저會Ā저쁌?⨀o킢瀀ꀏ會Āᡍ?⨀棤좗ĀĀĀ會ĀĀ灍?⨀å좗ĀĀĀ會ĀĀ졍?⨀飥좗ĀĀĀ會ĀĀ⁎?⨀?ꆟᤀ

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PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성 (Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM)

  • 김성원;송기호;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.21-22
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    • 2008
  • In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

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RF magnetron sputtering으로 성장된 ZnMgO박막의 구조적, 광학적 특성 분석 (Optical and structural properties of ZnMgO thin films by RF co-sputtering)

  • 강시우;김영이;안철현;조형균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.178-178
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    • 2007
  • II-VI의 넓은 밴드갭 (3.37 eV)을 가지는 ZnO는 solar cells, transparent conductive electrodes, ultraviolet light emitters, and chemical sensors 등에 응용되고 있다. 특히 고효율 ZnO계 발광 소자 구현을 위하여 MgO (7.7eV), CdO (2.0eV) 등의 고용을 통한 밴드갭을 엔지니어링 하며, 단파장 영역의 광원을 확보하기 위하여 MgO 첨가를 통한 밴드갭 에너지를 증가시키는 방향으로의 연구가 활발하다. 그러나 ZnO의 wurtzite 구조와 MgO의 rocksalt 구조의 상이한 결정구조로 인하여 Mg의 고용한계는 4 at. %, 4.1 eV 알려져 있다. 본 실험에서는 p-type Si (100), c-sapphire (0002)과 GaN 기판 위에 MgO (99.999 %)와 ZnO (99.999 %) 두가지 타겟을 사용하여 RF co-스퍼터링법으로 ZnMgO 박막을 증착 하였다. 이때 ZnO 타겟의 power 밀도는 고정 시키고 MgO 타겟의 power 밀도를 변화 시키며 Mg의 함량을 조절하여 그에 따른 광학적 구조적 특성의 변화를 연구 하였다. 성장된 ZnMgO 박막은 MgO 타겟의 power 밀도가 증가할 때 Mg의 함량이 10 at. %까지 증가 하며, 그에 따른 표면의 거칠기 및 입계 크기가 감소하며, 박막의 성장속도 또한 감소함을 SEM과 AFM을 통하여 알 수 있었다. XRD를 동하여 ZnMgO 박막의 (0002) peak의 위치는 $34.50^{\circ}{\sim}34.7^{\circ}$로 오른쪽으로 이동하며, c-축으로 성장하였음을 알 수 있다. PL과 UV룰 동하여, Mg의 함량이 증가 할수록 박막의 밴드갭 에너지는 3.2 eV에서 4.1 eV 로 증가하였다.

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CMP공정에 의한 CdTe 박막의 표면 및 광학 특성 거동 (Behavior of surfacial and optical properties of CdTe thin films by CMP process)

  • 박주선;나한용;고필주;김남훈;양정태;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.111-111
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    • 2008
  • 태양전지는 태양에너지를 직접 전기에너지로 변환시켜주는 광전 소자로서 구조적으로 단순하고 제조 공정도 비교적 간단하지만, 실용화를 위해서는 비용적인 측면이 많은 걸림돌이 되고 있다. 기존의 실리콘 태양전지는 낮은 광흡수율, 고비용임에도 불구하고 가장 많이 활용되고 있는 태양전지 기술이다. 그러나 태양전지의 경제성 향상과 실용화를 위해서는 기존의 실리콘 태양전지 보다 고효율 및 고신뢰도의 박막형 태양전지의 개발이 필요하다. 박막헝 태양전지의 재료로는 비정질 실리콘, 다결정 실리콘. CIGS, CdTe 등이 있다. 그 중에서도 박막형 태양전지에 광흡수층 물질로는 밴드갭 에너지 (l.4eV 부근), 변환 효율, 경제성 등을 고려했을 때 II-VI족 화합물인 CdTe가 가장 적합한 것으로 각광받고 있다. 하지만 아직까지 실리콘 태양전지에 비해 효율이 많이 떨어지는 단점을 가지고 있기 때문에 효율을 더 끌어올리기 위한 연구가 활발히 진행되고 있는 실정이다. 또한 CMP(chemical mechanical polishing) 공정은 반도체 박막 분야뿐만 아니라 물리, 화학 반응의 기초 연구에도 널리 응용이 되는 기술로써, 시료와 연마 패드 사이의 회전마찰에 의한 기계적 연마와 연마제 (abrasive) 에 의한 화학적 에칭으로 박막 표면을 평탄화하는 기술이다. 본 연구에서는 sputtering 법에 의해 증착된 CdTe 박막에 CMP 공정을 적용하여 표면 특성을 개선한 뒤 태양전지 변환 효율과 직접적인 연관성을 가지고 있는 표면 및 광특성의 변화를 CMP 공정 전과 후로 비교하였다. 표면의 변화를 관찰하기 위해서 AFM(atomic forced microscope) 과 SEM(scanning electron microscopy) 을 이용하였으며, 광특성의 비교를 위해서 흡수율과 PL특성을 측정하였다.

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Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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트리페닐아민을 이용한 염료감응형 태양전지 고효율 염료합성 (Highly Efficient and Stable Organic Photo-Sensitizers based on Triphenylamine with Multi-anchoring Chromophore for Dye-sensitized Solar Cells)

  • 양현식;정대영;정미란;김재홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.88.1-88.1
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    • 2010
  • Organic dyes, because of their many advantages, such as high molar extinction coefficients, convenience of customized molecular design for desired photophysical and photochemical properties, inexpensiveness with no transition metals contained, and environment-friendliness, are suitable as photosensitizers for the Dye-sensitized Solar Cell (DSSC). The efficiency of DSSC based on metal-free organic dyes is known to be much lower than that of Ru dyes generally, but a high solar energy-to-electricity conversion efficiency of up to 8% in full sunlight has been achieved by Ito et al. using an indoline dye. This result suggests that smartly designed and synthesized metal-free organic dyes are also highly competitive candidates for photosensitizers of DSSCs with their advantages mentioned above. Recently, the performance of DSSC based on metal-free organic dyes has been remarkably improved by several groups. We had reported the novel organic dye with double electron acceptor chromophore, which was a new strategy to design an efficient photosensitizer for DSSC. To verify the strategy, we synthesized organic dyes whose geometries, electronic structures and optical properties were derived from preceding density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations. In this paper, we successfully synthesized the chromophore containing multi-acceptor push-pull system from triphenylamine with thiophene moieties as a bridge unit. Organic dyes with a single electron acceptor and double acceptor system were also synthesized for comparison purposes. The photovoltaic performances of these dyes were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were also measured in order to characterize the effects of the multi-anchoring groups on the open-circuit voltage and the short-circuit current. In order to match specifications required for practical applications to be implemented outdoors, light soaking and thermal stability tests of these DSSCs, performed under $100mWcm^{-2}$ and $60^{\circ}C$ for 1000h.

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