• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.174-175
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• 2002

One-dimensional semiconductor nanowires and nanorods have attracted increasing interest due to their unique physical properties and diversity for potential electronic and photonic device applications., Unlike the conventional nanowires fabricated by metal catalyst-assisted vapor-liquid-solid (VLS) method, we developed metalorganic vapor-phase epitaxial (MOVPE) growth for which no catalyst is needed. The structural and photoluminecent properties will also be discussed. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.13-16
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• 2003

Magnetic and magneto-optical properties of Fe/Pt/Fe, Co/Pd/Co trilayers and also the sandwiches with wedge-shaped magnetic (Fe, Co) and nonmagnetic (Pt, Pd) layers were investigated. The oscillatory behavior of the saturation field $H_{s}$ of the studied trilayers with changing the thickness of the nonmagnetic layer (NML) $t_{NML}$ was revealed. That was explained by the exchange coupling between ferromagnetic layers (FML) through the nonmagnetic spacer. For the first time, oscillations of the transverse Kerr effect (TKE) with changing the Pt- and Pd-wedge thickness were discovered. Period of these oscillations was found to depend on the FML thickness and the photon energy of the incident light. TKE spectra of the examined samples were discovered to modify very strongly with increasing $t_{NML}$. The discovered peculiarities of magneto-optical properties of thin-film systems were explained by a concept of the spin-polarized quantum well states in the pt and Pd layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.229-230
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• 2008

We have studied the structural and optical properties of ZnO thin film deposited on glass by RF magnetron sputtering as functions of working pressures. The grain sizes were decreased as the working pressures were increased. The average optical transmissions over all exceeded 80% for ZnO films deposited in 20, 25 and 300m torr working pressures. And the transmission spectra patterns were almost same. While the transmission spectra pattern of ZnO film deposited in 35nm torr was different with other spectra patterns obtained in 20, 25 and 30nm torr working pressures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.29-32
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• 1988

Polycrystalline CdS films were prepared by coating a slurry, which consisted of Cds, 11w/o of CdCl$_2$ and various amounts of InCl$_3$on the glass substrate and by sintering in a nitrogen atmosphere. Measurements on the electrical and optical Properties and observation on the microstructure of the sintered films were made. It was observed that the carrier concentration in the films remains almost constant on the addition of InCl$_3$. Optical transmittance remains constant on the addition of InCl$_3$ up to 3w/o but it decreases with further increase in InCl$_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.375-377
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• 1998

The magneto-optical properties of Co/Co$_2$TiSn two-phase magnet films were studied. These films show that relatively large Kerr rotations which are -0.4 deg. at the wavelength of 400 nm, compared to that of pure Co. It is conceivable that the magneto-optical effects may be due to both contributions of ferromagnetic Co matrix and ferromagnetic Co$_2$TiSn Heusler alloy precipitate. The perpendicular magnetization curve domonstrates a typical bubble domain hysteresis loop. the saturation magnetization change of the annealed film is less sensitive to temperature in the low temperature region and the Curie temperature of Co$_2$TiSn Heusler alloy precipitate is a little higher in the annealed film. These can be explained by the increase of the number of Co-Co exchange interaction in Heusler alloy structure resulting from the change of chemical ordering by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.20-22
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• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.