• 한국재료학회지
• /
• 제19권9호
• /
• pp.488-493
• /
• 2009

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

• 한국재료학회지
• /
• 제22권10호
• /
• pp.508-512
• /
• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• 한국표면공학회지
• /
• 제47권2호
• /
• pp.81-85
• /
• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• 한국재료학회지
• /
• 제34권1호
• /
• pp.55-62
• /
• 2024

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω^-1).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.168-168
• /
• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• 전자공학회논문지D
• /
• 제35D권2호
• /
• pp.110-117
• /
• 1998

An optical modulator with CPW(coplanar waveguide) electode on Ti:LiNbO$_{3}$ optical waveguide wasfabricated and characterized. The electrical-optical bandwidth measurement showed an optical response of -3dBat 10 GHzand S$_{11}$ lessthan -10dB upto 20GHz. The typeical specifications are : 5.6V of driving voltage, 4.2dB of insertion loss and 30dB of on/off extinction. The eye pattern proved that the optical meduator, fabricated in this work, has properties good enough for application.

• 한국안광학회지
• /
• 제1권2호
• /
• pp.63-69
• /
• 1996

비정질 $As_2Se_3$ 박막에 첨가된 Ag가 전기 및 광학적 성질에 미치는 효과를 연구하기 위해 직류전기전도도와 광투과도를 측정하였다. 직류전기전도도에서 구한 활성화에너지 $E_g$와 광투과도에서 구한 광학적 갭 $E_{opt}$는 Ag의 함량이 증가할수록 감소하였고, Urbach 꼬리는 Ag의 함량 변화에 관계없이 거의 일정한 것으로 나타났다. 시료에 첨가된 Ag의 함량이 5mol% 이하이면 Ag 함량의 증가에 대한 직류활성화에너지의 감소율은 광학적 갭의 감소율에 비해 크게 변하였다. Ag가 5mol% 이상 첨가되었을 때에는 Ag 함량의 증가에 대한 $E_g$의 감소율과 $E_{opt}$의 감소율이 비슷하였다. 이와 같은 현상은 Ag의 함량이 5mol% 이하인 시료에서는 Fermi준위가 이동도단 쪽으로 옮기고 Ag의 함량이 5mol% 이상이면 이동도단이 Fermi준위 쪽으로 옮기는 것을 의미한다.

• 한국전기전자재료학회논문지
• /
• 제30권3호
• /
• pp.192-197
• /
• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• 한국전기전자재료학회논문지
• /
• 제30권3호
• /
• pp.170-174
• /
• 2017

In 3 electrode reflective displays using a plastic substrate, unstable packaging induces particle clumping and optical degradation due to external air inflow and electronic ink evaporation. In this work, we fabricate 3 electrode electronic paper using glass wafer, ITO/plastic film, and ITO/glass/gas barrier film as an upper substrate after injecting electronic ink onto the lower substrate. Then, we studied its properties. After operating under stress conditions for 336 hours at $85^{\circ}C$ and 75% humidity, the reflectivity of driven e-paper panels with white color was 25.5% for the panels using glass wafer, 22.5% for plastic film including a gas barrier layer, and 16% for plastic film only. From these optical properties, we conclude that gas barrier film improves upper film isolation as a desirable packaging method.

• Transactions on Electrical and Electronic Materials
• /
• 제6권4호
• /
• pp.169-172
• /
• 2005

[ $Y_2O_3:Eu$ ] powder was synthesized using a solution-combustion method by dissolving $(CH_3CO_2)_3Y$ and $(CH_3CO_2)_3$ Eu in methyl-alcohol solution. Results from X-ray diffractometery (XRD), thermogravimetry (TG)-differential thermal analysis (DTA) show that $Y_2O_3:Eu$ crystallizes completely when the dry powder is sintered at $500^{\circ}C$. The investigated optical properties were the photoluminescence emission spectra, the excitation spectra and luminescence decay curve. Europium (Eu) concentration had no observable effect on the optical spectrum which depended on the emission intensity. The mean lifetime of synthesized phosphors was $2.3\~2.6 ms$.