• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.612-616
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• 2009

Transparent conductive oxide (TCO) films have been widely used in the field of flat panel display industry. Transparent conductive indium zinc oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for indium tin oxide (ITO) films. In this study, using a $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10wt% as a target, IZO films were prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of substrate temperature and $O_2$ introduction flow rate were investigated in terms of electrical and optical properties of deposited IZO films. The best electrical and optical properties we obtained from this study were sheet resistance value of $5.446{\times}10^2{\Omega}/{\boxempty}$ and optical transmittance of 87.4% at 550 nm at $O_2$ introduction flow rate of 4 sccm, deposition rate of $2{\AA}$/sec, thickness of 1000 $\AA$ and substrate temperature of $150^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.493-500
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• 1996

AZO transparent conducting thin films were fabricated by reactive DC magnetron sputtering method using Zn metla target containing 2 wt% of Al, and electrical and optical properties were investigated after heattreatment. Electrical resistivity was reduced 50% and had reached $1{\times}10^{-3}~3.5{\times}10^{-4}\;{\Omega}cm$ by heat treatment. In the case of oxide AZO films, the resistivity of $10^{3}\;{\Omega}cm$ was also decreased to $2{\times}10^{-3}\;{\Omega}cm$ after heat treatment. The optical transmittance of AZO films deposited in the transition range was increased from 59.4 % to 77.4 % by $400^{\circ}C$, 30 min heat treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.745-750
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• 2017

Terahertz time-domain spectroscopy has been used to study the optical properties of $Pr^{3+}-doped$ selenide glasses. The complex refractive indexes of $Pr^{3+}-selenide$ glasses were measured in a frequency range from 0.3 to 1.5 THz. The real and imaginary refractive indexes increased with increasing frequency and $Pr^{3+}$ ion concentration. The obtained result indicated that the phonon modes of the $Pr^{3+}-doped$ selenide glasses shift to lower frequencies with the concentration of $Pr^{3+}$ ions. The theory of far-infrared absorption in amorphous materials was used to analyze the results. The measured data showed that the disorder-induced terahertz absorption increased with increasing $Pr^{3+}$ ion concentration.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.109-112
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• 2016

We have considered the influence of electron irradiation on the optical and electrical properties of $SnO_2$ thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of $277{\Omega}/{\square}$ and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of $SnO_2$ thin film in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.267-272
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• 2006

Optical waveguide based on symmetric and asymmetric Mach-Zehnder interferometer(MZI) type was designed, fabricated and measured the optical characteristics for the application of biosensor. The wavelength of the input optical signal for the device was 1550 nm. And the difference of refractive index was $0.45\;{\Delta}\%$ between core and cladding of the device. The TM(Transverse Magnetic) mode optical properties of the biosensor were analyzed with the refractive index variation of gold thin film deposited for overclad. Nowadays, nano-photonic crystal structures have been paied much attention for its high optical sensitivity. There is a technique to realize the structure, which is called Dip-Pen Nanolithography(DPN) process. The process requires a nano-scale process patterning resolution and high reliability. In this paper, two dimensional nano-photonic crystal array on the surface was proposed for improving the sensitivity of optical biosensor. And the Dip-Pen Nanolithogrphy process was investigated to realize it.

• Korean Journal of Optics and Photonics
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• v.31 no.1
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• pp.37-44
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• 2020

In this study, we propose a design method to optimize the electro-optical efficiency of a planar solar cell structure by adjusting one-dimensionally periodic emitter electrodes. Since the aperture ratio of the active layer decreases as the period of the emitter electrode decreases, the amount of light absorption diminishes, affecting the performance of the device. Here we design the optimal structure of the periodic emitter electrode in a simple planar solar cell, by simulation. In terms of optics, we find the condition that shows optical performance similar to that of a reference without the emitter electrode. In addition, the optimized electrode structure is extracted considering both the optical and electrical efficiency. This work will help to increase the utilization of solar cells by suggesting a structure that can most efficiently transfer charge generated by photoelectric conversion to the electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.436-436
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• 2005

We have investigated electro-optical properties of an in-plane switching cholesteric liquid crystal display (LCD). Planar and focal-conic texture changes re induced by application of an in-plane electric field.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.117-122
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• 2020

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (E_F) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.349-365
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• 2017

Graphene has attracted a lot of attentions due to the unique electrical and optical properties. Compared with the noble metal plasmons in the visible and near-infrared frequencies, graphene can support surface plasmons in the lower frequencies of terahertz and mid-infrared and it demonstrates an extremely large confinement at the surface because of the particular electronic band structures. Especially, the surface conductivity of graphene can be tuned by either chemical doping or electrostatic gating. These features make graphene a promising candidate for plasmonics, biosensing and transformation optics. Furthermore, the combination of graphene and metasurfaces presents a powerful tunability for exotic electromagnetic properties, where the metasurfaces with the highly-localized fields offer a platform to enhance the interaction between the incident light and graphene and facilitate a deep modulation. In this paper, we provide an overview of the key properties of graphene, such as the surface conductivity, the propagating surface plasmon polaritons, and the localized surface plasmons, and the hybrid graphene/metasurfaces, either metallic and dielectric metasurfaces, from terahertz to near-infrared frequencies. Finally, there is a discussion for the current challenges and future goals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.420-421
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• 2006

The ITO thin films were prepared by FTS (Facing Targets Sputtering) system on polycarbonate(PC) substrate. The ITO thin films were deposited with a film thickness of 100nm at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical and optical characteristics of the ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin film was deposited with a resistivity $8{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80%.