• Korean Journal of Environmental Agriculture
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• v.5 no.1
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• pp.1-10
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• 1986

To investigate the effects of paper sludge on the seasonal variations of soil humus, paper sludges were applied to the pots at the rates of 600㎏/10a which was either preadjusted C/N ratio to 30 : 1 or not adjusted. The effects were compared with those of control. 1) The contents of ether soluble materials, resins, water soluble polysaccharides, hemicellulose, cellulose, ligno-protein, humic acid and fulvic acid were higher in the sludge treated soil than in the control, furthermore, the content of ligno-protein had positive correlation with that of organic nitrogen in soil. 2) Optical density of UV and visible spectra of humic acid obtained from all the treated soil was decreased with increasing wavelength. In functional groups of humic acid, phenolic-OH/alcoholic-OH ratio was slightly higher in the sludge treated soil than in the control. The types of humic acid in all treated soil were P and Rp types. 3) The infrared spectra of humic acid extracted from the soil were characterized by main absorption bands in the regions of $3, 400cm^{-1}$(H-bonded OH), $2,900cm^{-1}$ (aliphatic C-H stretching), $1,630cm^{-1}$ (aromatic C=C and/or H-bonded C=O) and $1,050cm^{-1}$ (Si-O of silicate impurity).

• Korean Journal of Ecology and Environment
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• v.34 no.1 s.93
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• pp.20-29
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• 2001

The amount, chemical composition and optical property of extracellular dissolved organic carbon (EOC) by phytoplankton were examined using axenic cultures of Microcystis aeruginosa, Anabaena flos-aquae, and Oscillatoria agardhii. The extracellular organic matter was categorized into five fractions (hydrophobic acids; AHSs, hydrophobic neutrals; HoNs, hydrophilic acids; HiAs, hydrophilic bases; HiBs, and hydrophilic neutrals; HiNs) using three adsorbent resins(XAD-8, cation, and anion). The release pattern and chemical composition of EOC varied with algal species and their growth phases. Percentage of extracellular release increased with age in all cultures. HiAs were the dominant component of EOC in all cultures, whereas the proportion of HiAs decreased with age in all cultures. In contrast, the proportions of HiBs and HiNs increased as cultures aged. In particular, the HiN fraction increased from 0% to 44% of EOC in M. aeruginosa and from 3.0% to 28% in A. flos-aquae, respectively. The proportion of AHSs was higher in the cultures of A. flos-aquae(7.5${\sim}$16%) and O. agardhii (8.7${\sim}$16%) than M. aeruginosa(0.2${\sim}$2.5%). The proportions of AHSs increased with culture age in M. aeruginosa and O. agardhii, but decreased in A. flos-aquae. The specific UV absorbance also varied among species; 1.9 Abs${\cdot}$cm$^{-1}$/mgC${\cdot}$L$^{-1}$ for M. aeruginosa, 3.7 Abs${\cdot}$cm$^{-1}$/mgC${\cdot}$L$^{-1}$ for A. flos-aquae, and 13.0 Abs${\cdot}$cm$^{-1}$/mgC${\cdot}$L^{-1}$ for O. agardhii. The results of this study indicates that DOC excreted by three blue-green algae differed with species and the growth phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.