• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.75.3-75.3
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• 2015

Large area infrared surveys are often accompanied with follow-up optical spectroscopic surveys that has a significant legacy value even for other areas of research. Using these spectral database, we have performed a search for MgII absorption lines in the optical spectrum of background quasar. Over the ~4deg2 of AKARI North Ecliptic Pole survey field and Spitzer First Look Survey field, 18 and 16 MgII absorber systems are identified respectively. The redshift range for the background quasars was 1.0<$z_{qso}$<3.4, while the redshift range for the absorber was 0.6<$z_{abs}$<1.6. Galaxies responsible for MgII absorptions are identified in the deep optical images (CFHT r-band), yet the identification still remains ambiguous for 60% of the systems due to the limited image depth and the source crowdedness. The impact parameter ranges 20-60kpc, and the rest-frame equivalent width of MgII absorption ranges $0.7-4{\AA}$. The most critical part in the identification of MgII absorber galaxies is the existence of deep optical images in addition to the high S/N quasar spectrum with R>3000.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.138-141
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• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.359-360
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• 2006

Functional photoacoustic tomography is a new non-invasive imaging modality, and it is emerging as a very practical method for imaging biological tissue structures by means of laser-induced ultrasound. Structures with high optical absorption, such as blood vessels, can be imaged with the spatial resolution of ultrasound, which is not limited by the strong light scattering in biological tissues. By varying wavelengths of the laser light and acquiring photoacoustic images, optical absorption spectrum of each image pixel is found. Since the biochemical constituents of tissues determine the spectrum, useful functional information like oxygen saturation ($SO_2$) and total haemoglobin concentration (HbT) can be extracted. In this study, as a proof-of-principle experiment, hypoxic brain tumor vasculature and traumatic brain injury (TBI) of small animal brain are imaged with functional photoacoustic tomography. High resolution brain vasculature images of oxygen saturation and total hemoglobin concentration are provided to visualize hypoxic tumor vasculature, and hemorrhage on the cortex surface by the TBI.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.155.1-155.1
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• 2015

Nowadays, Plasma has been used in biological, medical such as wound healing, plant grow, killing cancer. When plasma generated, UV light and ROS(Reactive oxygen species), RNS(Reactive nitrogen species) can generated and those things effect to biological material. So we made simple plasma device using needle type of electrode and generated plasma. We used three kinds of gas and measured applied voltage and current. Also we observed optical emission spectrum. Using deuterium ramp, we can observed absorption spectrum and calculated radical density by lambert-beer's law. It is around ~1016cm3. And we can see the time-resolved absorption spectrum from monochromator, PMT(photo multiply tube), IV-converter, oscilloscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.3-7
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• 2004

$HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.152-156
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• 2004

We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.128-134
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• 1995

A fiber-optic temperature sensor utilizing an optical absorption device (InP) was fabricated. The spectrum of transmitted light through an InP device was obtained at the three temperatures(249 K, 369 K). A stabilized LED(light emmiting diode) driver, photoreceiver, and signal proocessing electronics were designed. An intensity referencing technique was adopted in order to minimize the fluctuation of output signal due to external pertubation of the transmitting optical fiber. The optical absorption edge of the InP device moves to longer wavelength at a rate of 0.42 nm / K, and energy gap of InP is 1.35 eV at room temperature. From these results, it is concluded that the InP device has temperature dynamic range of 300 K with LED of center wavelength of 940nm and spectral width of 50nm. The designed fiber-optic temperature sensor system showed good linearity within the temperature range from -30$^{\circ}C$ to + 150$^{\circ}C$.

• Proceedings of the Acoustical Society of Korea Conference
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• 1984.12a
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• pp.33-35
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• 1984

A new type single beam photoacoustic spectrometer suitable for measuring optical absorption of condensed powder matter with the automatic calibration capability of a source power spectrum is introduced. The signal processing until of this spectrometer consists of a photoacoustic cell a lock-in amp., a switching circuit and a personal computer. The measured optical absorption spectra of a few material by this method are good agreement with the results obtained by the double-beam photoacoustic spectrometer.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.33-38
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• 1996

The induced linewidth, frequency shift and absorption spectrum for a molecular dipole in the vicinity of a phase -conjugate mirror have been investgated within a classical phenomenological model, with particularreference to the technique of optical phase conjugation by a surface. While the shifts and the widths show similar characteristics as those obtained recently by Bochove who considered the problem within the context of four-wave mixing, the results obtained in the present model can be defined uniquely with the possibility of an infinite lifetime for the excited admolecule . Furthermore, the absorption lineshape obtained here some interesting features which depend on both the magnitude and the phase of the complex reflectivity of the mirror.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.