• Title/Summary/Keyword: Optical Intergrated Circuit

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Intergrated circuit design of power-stabilizing circuitry for optical transmitter (광송신기용 광파워 안정화 회로의 집적회로 설계)

  • 이성철;박기현;정행근
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.3
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    • pp.47-55
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    • 1996
  • An optical transmitter, which is a key component of the optical transmission system, converts the electrical signal to optical signal and consists of a high-speed current-pulse driver for laser diode and low-speed feedback loops that stabilize optical power against aging, power supply voltage fluctuations, and ambient temperature changes. In this paper, the power-stabilizing part, which forms the bulk of the optical transmitter circuitry was designed in integrted circuits. Operational amplifiers and reference voltage generation circuits, which were identified as key building blocks for the power-stabilizing feedback loops, were designed and were subsequently verified through HSPICE simulations. The designed operational amplifier consists of a two-stage folded cascode amplifier and class AB output stage, whereas the reference voltage is obtained by bandgap reference circuits. Finally the power-stabilizing circuitry was laid out based on 3\mu$m CMOS design rules for fabrication.

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A study on the enhancement of refractive index in Ti:LiTaO$_{3}$ optical waveguides by Zn-vapor diffusion (Zn-Vapor확산에 의한 Ti:LiTaO$_{3}$ 광도파로의 굴절률 증가에 관한 연구)

  • 정홍식;정영식
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.298-303
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    • 1996
  • A double diffusion technique is developed to enhance the effective mode index of optical waveguides in $LiTaO_3$. It consists of Zn diffusion from the vapor phase at relatively low temperatures (750->$800^{\circ}C$), into waveguides initially produced by Ti indiffusion at higher temperature (1150->$1200^{\circ}C$). Both X- and Z-cut substrates are investigated. A model that combines profiles of both diffusion is formulated to calculate the expected effective index values for planar waveguides. Good agreement is found between experimental results and model predictions which assume that the initial Ti profile is not affected by the lower temperature Zn diffusion. Effective index enhancements as high as 0.005 and 0.003 are obtained by this method for the fundamental extraordinary and ordinary modes, respectively.

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