• KSBB Journal
• /
• v.24 no.1
• /
• pp.1-8
• /
• 2009

In the past decade, we have observed rapid advances in the development of biochips in many fields including medical and environmental monitoring. Biochip experiments involve immobilizing a ligand on a solid substrate surface, and monitoring its interaction with an analyte in a sample solution. Metal nanoparticles can display extinction bands on their surfaces. These charge density oscillations are simply known as the localized surface plasmon resonance (LSPR). The high sensitivity of LSPR has been utilized to design biochips for the label-free detection of biomolecular interactions with various ligands. LSPR-based optical biochips and biosensors are easy to fabricate, and the apparatus cost for the evaluation of optical characteristics is lower than that for the conventional surface plasmon resonance apparatus. Furthermore, the operation procedure has become more convenient as it does not require labeling procedure. In this paper, we review the recent advances in LSPR research and also describe the LSPR-based optical biosensor constructed with a core-shell dielectric nanoparticle biochip for its application to label-free biomolecular detections such as antigen-antibody interaction.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.8
• /
• pp.52-59
• /
• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

• The Bulletin of The Korean Astronomical Society
• /
• v.39 no.2
• /
• pp.90-90
• /
• 2014

The Immersion Grating Infrared Spectrometer (IGRINS) is the first astronomical spectrograph that uses a silicon immersion grating as its dispersive element. IGRINS fully covers the H and K band atmospheric transmission windows in a single exposure. It is a compact high-resolution cross-dispersion spectrometer whose resolving power R is 40,000. An individual volume phase holographic grating serves as a secondary dispersing element for each of the H and K spectrograph arms. On the 2.7m Harlan J. Smith telescope at the McDonald Observatory, the slit size is $1^{{\prime}{\prime}}{\times}15^{{\prime}{\prime}}$. IGRINS has a plate scale of 0.27" pixel-1 on a $2048{\times}2048$ pixel Teledyne Scientific & Imaging HAWAII-2RG detector with a SIDECAR ASIC cryogenic controller. The instrument includes four subsystems; a calibration unit, an input relay optics module, a slit-viewing camera, and nearly identical H and K spectrograph modules. The use of a silicon immersion grating and a compact white pupil design allows the spectrograph collimated beam size to be 25mm, which permits the entire cryogenic system to be contained in a moderately sized ($0.96m{\times}0.6m{\times}0.38m$) rectangular Dewar. The fabrication and assembly of the optical and mechanical components were completed in 2013. From January to July of this year, we completed the system optical alignment and carried out commissioning observations on three runs to improve the efficiency of the instrument software and hardware. We describe the major design characteristics of the instrument including the system requirements and the technical strategy to meet them. We also present the instrumental performance test results derived from the commissioning runs at the McDonald Observatory.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.375-375
• /
• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.189-189
• /
• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.412-412
• /
• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.105-105
• /
• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• The Journal of Korean Academy of Prosthodontics
• /
• v.55 no.2
• /
• pp.135-143
• /
• 2017

Purpose: This research was conducted to compare the marginal and internal fit of zirconia prostheses fabricated with the model scan method and the intraoral scan method. Materials and methods: In this study, 20 extracted human mandibular first molar was used in the preparation of abutment tooth for the fabrication of zirconia prostheses. In the first group, the model scan method was applied on 10 prepared teeth. In the other group, the intraoral scan method was used on other 10 prepared teeth. Datum of both groups were transmitted to the software system. Afterwards, 20 zirconia prostheses were fabricated using the Ceramill system. Weight technique was used to evaluate the internal gap of the zirconia prostheses. In the Replica technique, marginal gap of the zirconia prostheses were analyzed by optical microscopy. Statistical analysis was based on one-way ANOVA. Results: Model scan group showed lower average weight than intraoral scan group when weight technique was applied, which has significance (P < .05). Also, model scan group showed significantly lower figures in all 5 measurements of replica technique than intraoral scan group (P < .05). Conclusion: Zirconia prostheses of both groups demonstrated clinically acceptable margin and internal fit. However, model scanned zirconia prostheses showed higher marginal and internal fit than intraoral scanned crowns.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.20 no.2
• /
• pp.109-120
• /
• 2004

INTRODUCTION: The build-up method has been used for application of porcelain powder on the metal framework to make final tooth shape conventionally. This method takes time and need skill to mimic final shade and shape of porcelain fused to metal crown. The purpose of this study was to develop standard shape and shade laminating porcelain forms to reduce build-up time. METHODS: To make tooth form porcelain paste, several liquid organic compounds were added to conventional feldspathic porcelain. The amount of additives and rheologic property were tested to find out best composition. Comparison of mixing methods to reduced porosity, proper heating schedule, and measurement of shrinkage amount and residual organic materials were performed to set-up standard procedures. Finally, biaxial flexural strength and color of preformed laminated paste porcelain were compared with those of porcelain which fabricated by the conventional build-up method. RESULTS: There was no significant difference in physical properties and color stability between two fabrication methods after various testing methods. Conclusion: This new build-up method can be applied to fabricate the PFM crown and bridge without any loss of strength and optical properties.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.5
• /
• pp.254-259
• /
• 2003

In the fabrication process of transparent conducting thin films of the ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the $SiO_2$ buffer layer formed on the substrate and $N_2$ annealing treatment were investigated by XPS (X-ray photoelectron spectroscopy) analysis. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin films which were deposited on $SiO_2$ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84 % and $5.0\times 10^{-3}\Omega \textrm{cm}$ respectively. The XPS analysis confirmed that a $SiO_2$ buffer layer inhibited Na ion diffusion from the substrate, resulting in prohibiting the formation of a secondary phase such as $Na_2SnO_3$ and SnO and increasing Sb ion concentration and ratio of $Sb^{5+}/Sb^{3+}$ in the film. And it was also found that $N_2$ annealing treatment leads to the reduction of $Sn^{4+}$as well as $Sb^{5+}$ however the reduction of $Sn^{4+}$ is more effective and therefore consequently results in decrease in the electrical resistivity to produce an excellent electrical properties of the film.