• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.294-300
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• 1993

Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

• ETRI Journal
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• v.33 no.2
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• pp.275-278
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• 2011

This letter presents a polymer $1{\times}2$ thermo-optic totalinternal-reflection digital optical switch (TIR-DOS) with an index contrast of 1.5%-${\delta}$ operating at low power consumption. The structure of our $1{\times}2$ TIR-DOS was created by adding a reflection port to that of a conventional multimode filtering variable optical attenuator. To improve the total-internalr-eflection efficiency, a heater offset was applied to the crossing region of multimode waveguides of the TIR-DOS. The fabricated $1{\times}2$ TIR-DOS shows a low electrical power consumption of 18 mW for an on-off ratio of 35 dB.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.19-23
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65 mA. but also a high on/off contrast ratio more than 50 dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.542-544
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• 2002

This paper proposes a wavelength sensor based on the optical directional coupler. The finite-difference time-domain (FDTD) is used in analysis of the field intensity of tile light propagating thorough the structure. The device with tile width of 0.4 $\mu\textrm{m}$ and the thickness of 0.4 $\mu\textrm{m}$, which corresponding with the coupling length of 40$\mu\textrm{m}$, would provide tile linear relationship between the coupling efficiency against the wavelength. The device can sense the wavelength in a range between 1.5$\mu\textrm{m}$ and 1.6$\mu\textrm{m}$, with continuous resolution. The wide wavelength could be also done be paralleling th light to a number of wavelength-sensing modules with particularly required bands. Therefore, it could be employed as the wavelength sensing for most optical communications, optoelectronics, laser applications and etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1070-1073
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• 2004

In this study, Tri(1-phenylpyrazolato)iridium $(Ir(ppz)_3)$ was prepared for the pure blue phosphorescent dopant and various host materials were used for the appropriate energy alignment. Although the luminance was pure blue with the CIE coordinates of x = 0.158, y = 0.139, device efficiencies didn't improve yet. Instead of finding the proper host materials, the alteration of structure of OLEDs affected the improvement of electrical and optical characteristics of the devices. It was worthy that insertion the exciton formation zone with the host material between the emitting zone and the exciton blocking layer. The device with a structure of ITO/NPB/Ir(ppz)3 doped in CBP/CBP for the exciton formation zone/BCP/Liq/Al was fabricated and the characteristics were observed compared with the devices without the exciton formation zone. When CBP was used for the exciton formation zone, the device efficiency reached to over 0.25 cd/A. While the device used CBP only for the host showed the luminous efficiency of under 0.11 cd/A

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.14-19
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• 2010

In this paper, a novel architecture for device miniaturization of multimode interference-based couplers (MMICs) is proposed by replacing conventionally designed MMICs by cascaded two-section stepped-width or stepped-index MMICs. For the 82% cross coupling efficiency in a stepped-width MMIC, the coupling length of device results in just 6.7% length reduction. However, for a stepped-width and stepped-index MMIC, the coupling efficiency increases to 93% and the length reduction of 9% occurs. Furthermore, with additional incorporation of tapered devices, it shows that a compact MMIC can be designed in which the coupling efficiency is 90% and the length is reduced to 25%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.358-360
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• 2001

In this study, the bis(8-oxyquinolino)zinc II (Znq$_2$) were synthesized successfully from zinc chloride (ZnC1$_2$) as a initial material. Then, we fabricated red organic electroluminescent device with a dye (DCJTB)-doped and inserted Znq$_2$ between emission layer and cathode layer for increasing EL efficiency. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl) -1,1'-diphenyl-4,4'- diamine(TPD), and the host material of emission layer is Znq$_2$. And we study the electrical and optical properties of devices. We found that the device using Znq$_2$ inserting layer result in the increased efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1056-1058
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• 2005

Electrical and optical characteristics of MEH-PPV-based PLEDs with the LiF anode interfacial layer were investigated. The maximum luminance efficiency of the device with a LiF anode interfacial layer of 1-nm-thick was 3.0 lm/W, which is higher than 1.97 lm/W of the device without a LiF layer. By inserting LiF, excess injected holes from ITO anode can be blocked and hence the recombination ratio of electrons and holes can be increased in the emitting layer to improve device efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.