• Title/Summary/Keyword: Operation layer

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Design of Low-Power and Low-Complexity MIMO-OFDM Baseband Processor for High Speed WLAN Systems (고속 무선 LAN 시스템을 위한 저전력/저면적 MIMO-OFDM 기저대역 프로세서 설계)

  • Im, Jun-Ha;Cho, Mi-Suk;Jung, Yun-Ho;Kim, Jae-Seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.11C
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    • pp.940-948
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    • 2008
  • This paper presents a low-power, low-complexity design and implementation results of a high speed multiple-input multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) wireless LAN (WLAN) baseband processor. The proposed processor is composed of the physical layer convergence procedure (PLCP) processor and physical medium dependent (PMD) processor, which have been optimized to have low-power and reduced-complexity architecture. It was designed in a hardware description language (HDL) and synthesized to gate-level circuits using 0.18um CMOS standard cell library. As a result, the proposed TX-PLCP processor reduced the power consumption by as much as 81% over the bit-level operation architecture. Also, the proposed MIMO symbol detector reduced the hardware complexity by 18% over the conventional SQRD-based architecture with division circuits and square root operations.

뉴로모픽 시스템용 시냅스 트랜지스터의 최근 연구 동향

  • Nam, Jae-Hyeon;Jang, Hye-Yeon;Kim, Tae-Hyeon;Jo, Byeong-Jin
    • Ceramist
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    • v.21 no.2
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    • pp.4-18
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    • 2018
  • Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

Operation of Electrodialysis at Over Limiting Current Density (한계전류밀도 이상에서 전기투석공정의 운전)

  • 박진수;최재환;문승현
    • Membrane Journal
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    • v.12 no.3
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    • pp.171-181
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    • 2002
  • The parameter which determines the plateau length of current-voltage curve for ion- exchange membranes was studied at various concentrations of NaCl and different flow rates. Moreover, the feasibility of the electrodialytic removal of 0.1 M NaCl solution at various current densities was tested by assessing the electrodialysis performance parameters such as salt removal efficiency, current efficiency, energy consumption and water dissociation. The diffusion boundary layer (DBL) thickness decreased with the NaCl concentration and flow rate of fled solution and it was observed that the plateau length of current-voltage curves was related with the DBL thickness. The removal efficiency and current efficiency were not affected significantly by the current densities even at the overlimiting current region indicating that most current were passed by electrolyte, and water dissociations are not responsible for the overlimiting current. Energy consumption increased when the current density supplied exceeded the limiting current density (LCD) values, because additional energy was necessary to overcome the plateau potential. Beyond the LCD values the energy consumption required to get a certain removal efficiency was not affected by the current density applied. The result suggests that it is allowed to operate electrodialysis processes at as high as possible current density unless water-splitting does not occur.

Fabrication of Nano Dot and Line Arrays Using NSOM Lithography

  • Kwon Sangjin;Kim Pilgyu;Jeong Sungho;Chang Wonseok;Chun Chaemin;Kim Dong-Yu
    • Journal of the Optical Society of Korea
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    • v.9 no.1
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    • pp.16-21
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    • 2005
  • Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

Prediction of Influent Flow Rate and Influent Components using Artificial Neural Network (ANN) (인공 신경망(ANN)에 의한 하수처리장의 유입 유량 및 유입 성분 농도의 예측)

  • Moon, Taesup;Choi, Jaehoon;Kim, Sunghui;Cha, Jaehwan;Yoom, Hoonsik;Kim, Changwon
    • Journal of Korean Society on Water Environment
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    • v.24 no.1
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    • pp.91-98
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    • 2008
  • This work was performed to develop a model possible to predict the influent flow and influent components, which are one of main disturbances causing process problems at the operation of municipal wastewater treatment plant. In this study, artificial neural network (ANN) was used in order to develop a model that was able to predict the influent flow, $COD_{Mn}$, SS, TN 1 day-ahead, 2day-ahead and 3 day ahead. Multi-layer feed-forward back-propagation network was chosen as neural network type, and tanh-sigmoid function was used as activation function to transport signal at the neural network. And Levenberg-Marquart (LM) algorithm was used as learning algorithm to train neural network. Among 420 data sets except missing data, which were collected between 2005 and 2006 at field plant, 210 data sets were used for training, and other 210 data sets were used for validation. As result of it, ANN model for predicting the influent flow and components 1-3day ahead could be developed successfully. It is expected that this developed model can be practically used as follows: Detecting the fault related to effluent concentration that can be happened in the future by combining with other models to predict process performance in advance, and minimization of the process fault through the establishment of various control strategies based on the detection result.

Cause of Break-up and Flotation Characteristics for Sludge from DAF Process (DAF 공정에서 발생한 슬러지의 Break-up 원인과 부상 특성)

  • Yoo, Young-Hoon;Moon, Yong-Taik;Kim, Seong-Jin;Lee, Kwang-Joon;Kwak, Dong-Heui
    • Journal of Korean Society of Water and Wastewater
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    • v.24 no.5
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    • pp.527-536
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    • 2010
  • Although the bubble-floc agglomerate floated and formed the float layer on the surface of the water in the DAF process, after inducing in the thickening tank a part of the bubble-floc agglomerate come up again to the surface and the other is settled at the bottom of the tank. The bubble-floc agglomerate divided into two group as the scum on the surface and the sludge of the bottom gives rise to operational troubles for the thickening process. In order to find out the cause of break-up and the effective thickening method for sludge from the DAF process, the composition of the bubble-floc agglomerate was investigated and a series of flotation experiments carried out. There was no difference of composition between the scum on the surface and the sludge of the bottom in the thickening tank. The coagulation was not effective to improve the trouble that the bubble-floc agglomerate divided into the scum and the sludge. It was estimated that for the bubble-floc agglomerate of thickening tank the trouble was caused by not the change or the difference of chemical composition but whether the bubble-floc agglomerate hold bubbles. Furthermore, for the effective thickening of sludge from the DAF process, it is required an additional flotation applied the AS ratio depending upon the solid concentration of sludge as the operation parameter.

AN EXPERIMENTAL STUDY ON THE EFFECT OF VARIOUS HYDROXIDES UPON THE PULP IN DOGS' TEETH (수종수산화물(數種水酸化物)이 치수조직(齒髓組織)에 미치는 영향(影響)에 관(關)한 실험적연구(實驗的硏究))

  • Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.1 no.1
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    • pp.26-32
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    • 1975
  • After a vital pulpotomy in dogs' teeth, the responses of the remaining pulp tissue under hydroxides (calcium hydroxide, magnesium hydroxide, aluminium hydroxide and zinc hydroxide) were studied histologically. The class V cavities were prepared on the teeth and the pulp was amputated. Each hydroxide was placed over the amputated tissue and the cavity was sealed with zinc oxide eugenol cement. Animals were sacrificed after 3 days, 1, 2, and 3 weeks following the operation. The teeth were decalcified, sectioned and stained with hematoxylin and eosin. Microscopic examination reveals as follows; 1. Calcium hydroxide: Inflammatory change was seen in the superficial portion of the remaining pulp tissue at the 3rd day and 1st week. The incompleted calicified material began to be deposited from the canal wall at the 2nd week, and the advanced calcified material was seen at the 3rd week. 2. Magnesium hydroxide: Severe inflammatory change was seen in the superficial portion of the remaining pulp from the 3rd day and the 1st week samples. Inflammatory change was decreased at the 2nd week and the slight calcified material was deposited from the root canal at the 3rd week. 3. Aluminium hydroxide: Severe inflammatory changes were seen in the remaining pulp tissue, the blood vessel was dilated, and the odontoblasts were destroyed at the 3rd day and 1st week. The fibrous degeneration spread to the apex at the 2nd week. There was no evidence of newly formed odontoblasts or deposition of calcified material underneath aluminium hydroxide. 4. Zinc hydroxide: The micrscopic picture was destructive. A thick necrotic layer was found under the amputated surface at the 3rd day and 1st week. Granulation tissue formation as well as chronic inflammatory changes extended to the apical area in the pulp tissue. Also there were no sign of odontoblastic formation or calcified material at the 2nd and 3rd week.

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Design of QCA Content-Addressable Memory Cell for Quantum Computer Environment (양자컴퓨터 환경에서의 QCA 기반 내용주소화 메모리 셀 설계)

  • Park, Chae-Seong;Jeon, Jun-Cheol
    • The Journal of the Convergence on Culture Technology
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    • v.6 no.2
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    • pp.521-527
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    • 2020
  • Quantum-dot cellular automata (QCA) is a technology that attracts attention as a next-generation digital circuit design technology, and several digital circuits have been proposed in the QCA environment. Content-addressable memory (CAM) is a storage device that conducts a search based on information stored therein and provides fast speed in a special process such as network switching. Existing CAM cell circuits proposed in the QCA environment have a disadvantage in that a required area and energy dissipation are large. The CAM cell is composed of a memory unit that stores information and a match unit that determines whether or not the search is successful, and this study proposes an improved QCA CAM cell by designing the memory unit in a multi-layer structure. The proposed circuit uses simulation to verify the operation and compares and analyzes with the existing circuit.

Design and VLSI Implementation of Reassembly Controller for ATM/AAL Layer (ATM/AAL 처리를 위한 재조립 처리기의 설계 및 VLSI 구현)

  • 박경철;심영석
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.5
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    • pp.369-378
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    • 2003
  • This paper presents design and VLSI implementations of a reassembly processor for ATM/AAL. The assembly processor is responsible for processing ATM cells from the receive physical interface. It controls the transfer of the AAL payload to host memory and performs all necessary SAR and CPCS checks. We propose the improved structure of cell identification algorithm and smart scatter method for host memory management. The proposed cell identification algorithm quickly locates the appropriate reassembly VC table based on the received VPI./VCI channel value in the ATM header. The cell identification algorithm also allow complete freedom in assignment of VCI/VPI values. The reassembly processor uses a smart scatter method to write cell payload data to host memory. It maintains the scatter operation and controls the incoming DMA block during scatter DMA to host memory. The proposed reassembly processor can perform reassembly checks on AAL. OAM cell. For an AAL5 connection, only CPCS checks, including the CRC32, are performed. In this paper, we proposed a practical reassembly architecture. The design of reassembly processor has become feasible using 0.6${\mu}{\textrm}{m}$ CMOS gate array technology.

Characterization of gate oxide breakdown in junctionless amorphous InGaZnO thin film transistors (무접합 비정질 InGaZnO 박막 트랜지스터의 게이트 산화층 항복 특성)

  • Chang, Yoo Jin;Seo, Jin Hyung;Park, Jong Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.1
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    • pp.117-124
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    • 2018
  • Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.