Electrical Properties of Phase Change Memory Device with Novel GST/TiAlN structure (Novel GST/TiAlN 구조를 갖는 상변화 메모리 소자의 전기적 특성)
-
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
- /
- 2005.07a
- /
- pp.118-119
- /
- 2005