• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• Journal of Hydrogen and New Energy
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• v.18 no.4
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• pp.422-431
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• 2007

Polymer electrolyte membrane fuel cell(PEMFC) is very interesting power source due to high power density, simple construction and operation at low temperature. But it has problems such as high cost, improvement of performance and effect of temperature. These problems can be approached to be solved by using mathematical models which are useful tools for analysis and optimization of fuel cell performance and for heat and water management. In this paper, the present work is to develop an electrochemical model to examine the electrochemical process inside PEM fuel cell. A complete set of considerations of mass, momentum, species and charge is developed and solved numerically with proper account of electrochemical kinetics. When depth of gas channel becomes thinner, diffusion of reactant makes well into gas diffusion layer(GDL) and the performance increases. Although at low current region there is little voltage difference between experimental data of PEM fuel cell and numerical data. When the porosity size of gas diffusion layer for PEM fuel cell is bigger, oxygen diffusion occurs well and oxygen mass fraction appears high in catalyst layer.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.59-63
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• 2019

To reduce the fault current below the current capacity of a circuit breaker, researches on HTS (High Temperature Superconductor) power cables with fault current limiting (FCL) function are increasing. An FCL HTS power cable transports current with low a impedance during normal operation. Yet, it limits the fault current by an increased inductive or resistive impedance of conducting layer when quench occurs at the FCL HTS power cable by the large fault current. An inductive type FCL HTS power cable uses increased inductive impendence caused by leakage magnetic flux outside the cable core when the quench occurs at a shield layer losing the magnetic shielding effect. Therefore, it has an advantage of less resistive heating than resistive type FCL HTS power cable and temperature increase is suppressed. This paper describes an ideal circuit model for the FCL HTS power cable to investigate the effectiveness of increased inductive impedance when quench occurs at the shield layer. Then, FEM analysis is presented with a simplified model cable composed of various iron yokes to investigate the effect of the shape of yoke on the generation of the inductive impedance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1424-1429
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• 2007

This paper presents a simple and reliable one-touch type multi-immunosensing lab-on-a-chip (LOC) detecting antibodies as multi-disease markers using electrochemical method suitable for a portable point-of-care system (POCS). The multi-stacked LOC consists of a PDMS space layer for liquids loading, a PDMS valve layer with 50 im in height for the membrane, a PDMS channel layer for the fluid paths, and a glass layer for multi electrodes. For the disposable immunoassay which needs sequential flow control of sample and buffer liquids according to the designed strategies, reliable and easy-controlled on-chip operation mechanisms without any electric power are necessary. The driving forces of sequential liquids transfer are the capillary attraction force and the pneumatic pressure generated by air bladder push. These passive fluid transport mechanisms are suitable for single-use LOC module. Prior to the application of detection of the antibody as a disease marker, the model experiments were performed with anti-DNP antibody and anti-biotin antibody as target analytes. The flow test results demonstrate that we can control the fluid flow easily by using the capillary stop valve and the PDMS check valves. By the model tests, we confirmed that the proposed LOC is easily applicable to the bioanalytic immunosensors using bioelectrocatalysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.578-580
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• 2009

Wireless Sensor Networks(WSNs) has been used for various applications. It is optimized to low power operation than various function and transmission reliability because of limited power by batteries. but it is necessary to guarantee of reliability for using exact data for more diversity purpose. In WSNs environment composed by multi-hop, it is guarantee to end-to-end transmission reliability based hop-by-hop reliability. however, IEEE 802.15.4 standard is not consider link-layer reliability. in this paper, we propose energy efficient Reliable Link-layer Protocol for Wireless Sensor Networks.

• Membrane Journal
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• v.33 no.1
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• pp.13-22
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• 2023

Despite high capacity of lithium metal anode, its uncontrollable dendrite growth results in the poor electrochemical (EC) performance (low Coulomb efficiency and limited cycle stability) and unsafe operation. In this study, we demonstrated a lithium metal anode protected with BaTiO₃/PVDF based piezoelectric layer to enhance its EC performance by utilizing the locally polarized lithium metal after volume expansions. As-formed lithium metal electrode deposited with BTO@PVDF layer exhibited an enhanced Coulombic efficiency (> 98% for 100 cycles) and facilitated lithium ion diffusions (lithium diffusion coefficient: D_Li+), revealing the effectiveness of piezoelectric layer deposited lithium metal electrode approach.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.05a
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• pp.198-203
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• 2004

This paper describes a real-time control architecture for DUSAUV (Dual Use Semi-Autonomous Underwater Vehicle), which has been developed at Korea Research Institute of Ships & Ocean Engineering (KRISO), KORDI, for being a test-bed oj development of technologies for underwater navigation and manipulator operation. DUSAUV has three built-in computers, seven thrusters for 6 degree of freedom motion control, one 4-function electric manipulator, one pan/tilt unit for camera, one ballasting motor, built-in power source, and various sensors such as IMU, DVL, sonar, and so on. A supervisor control system for GUI and manipulator operation is mounted on the surface vessel and communicates with vehicle through a fiber optic link. Furthermore, QNX, one of real-time operating system, is ported on the built-in control and navigation computers of vehicle for real-time control purpose, while MicroSoft OS product is ported on the supervisor system for GUI programming convenience. A hierarchical control architecture which consist of three layers (application layer, real-time layer, and physical layer) has been developed for efficient control system of above complex underwater robotic system. The experimental results with implementation of the layered control architecture for various motion control of DUSAUV in a basin of KRISO is also provided.