• Title/Summary/Keyword: Open-Circuit Characteristics

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Improvement of Cu2ZnSnS4 Solar Cell Characteristics with Zn(Ox,S1-x) Buffer Layer (Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상)

  • Yang, Kee-Jeong;Sim, Jun-Hyoung;Son, Dae-Ho;Lee, Sang-Ju;Kim, Young-Ill;Yoon, Do-Young
    • Korean Chemical Engineering Research
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    • v.55 no.1
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    • pp.93-98
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    • 2017
  • This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.