• Title/Summary/Keyword: Open-Circuit Characteristics

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The Characteristics of a Hydrogenated Amorphous Silicon Semitransparent Solar Cell When Applying n/i Buffer Layers

  • Lee, Da Jung;Yun, Sun Jin;Lee, Seong Hyun;Lim, Jung Wook
    • ETRI Journal
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    • v.35 no.4
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    • pp.730-733
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    • 2013
  • In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance.

Optimization of energy level alignment for efficient organic photovoltaics (에너지 준위 접합 최적화를 통한 유기태양전지 효율 향상법)

  • Lee, Hyunbok
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.12-16
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    • 2015
  • Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

Transparent Photovoltaic Device using Two-dimensional Transition-metal Dichalcogenides (이차원 반도체 소재를 이용한 투명 태양전지 특성에 관한 연구)

  • Jwa, Tae-Hun;Hyun, Chul-Min;Kim, Min-Sik;Lee, Hyeok-ju;Ahn, Ji-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.49 no.2
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    • pp.186-190
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    • 2016
  • In this study, we fabricated the transparent photovoltaic device using 2-dimensional transition-metal dichalcogenides and investigated the transparency and photovoltaic characteristics. P-n heterojunction was formed by mechanical exfoliation and aligned transfer method on the transparent sheet using n-type $MoS_2$ and p-type $WSe_2$. Our transparent photovoltaic device exhibited the open-circuit voltage of ~ 0.15 V and the short-circuit current of 0.48 nA under illumination of white light.

Modeling of the Liquid Rocket Engine Transients (액체로켓엔진 천이작동 예측을 위한 동특성 모델링)

  • Ko, Tae-Ho;Jeong, Yu-Shin;Yoon, Woong-Sup
    • Journal of the Korean Society of Propulsion Engineers
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    • v.15 no.1
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    • pp.45-54
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    • 2011
  • A program aiming at predicting dynamic characteristics of a Liquid Rocket Engine(LRE) was developed and examined to trace entire LRE operation. In the startup period, transient characteristics of the propellant flows were predicted and validated with hydraulic tests data. An arrangement of each component for the pipelines was based on an operating circuit of open cycle LRE. The flow rate ratio for the gas generator and the main chamber was determined to mimic that of real open cycle LRE. Individual component modeling at its transient was completed and was integrated into the system prediction program. Essential parameters of the component dynamic characteristics were examined in an integrated fashion.

Low Pass Filter Design using the SRR-DGS Resonator (SRR-DGS 공진기를 이용한 저역통과 필터 설계)

  • Kim, Jong-Hwa;Kim, Gi-Rae;Kim, Sung-Hoon
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.4
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    • pp.257-262
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    • 2015
  • In this paper, the split-ring DGS resonator is proposed and its equivalent circuit are analyzed to design the low pass filter. Compared with the conventional dumbell DGS cell, this structure has a flat fluctuation in low frequency range and a sharp slop at edge frequency. The out-band suppression of the SRR-DGS cell can be improved by placing the open stubs on the conductor line which operates as parallel capacitances. Making use of equivalent circuit analytical method, the characteristics of the improved SRR DGS cell are investigated and applied to design compact low pass filter, which has a low in-band loss, sharp slop and high suppression of more than 35dB within a wide out-band frequency range. The dependence of the transmission characteristic on the dimension of a split ring, such as side-length and split-gap, is analyzed in detail. In addition, an improved SRR DGS cell model with open stubs loaded on the conductor line is then presented to improve the out-band suppression. By using the equivalent-circuit analytical method, an S-band microstrip low-pass filter with perfect low-pass characteristic and high out-band suppression is designed and fabricated.

A Basic Study for the Control Circuit of 2-phase 8-pole HB type Linear Pulse Motor (2상 8극 HB형 리니어펄스모터의 제어회로구성을 위한 기초연구)

  • Kim, Sung-Hun;Kim, Il-Jung;Lee, Eun-Woong
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.135-137
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    • 1994
  • In this paper, step response, speed, maximum frequency characteristics of 2-phase, 8-pole, HB type, prototype linear pulse motor(LPM) were investigated with the open loop control system(OLCS) being attached to the LPH. In this experiment, both 1-phase and 1-2 phase excitation types were adopted and microcomputer was used in deal with the data. The results point to some directions for the improvement of the open loop control system.

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Application Types and Meanings of Fashion Engineering in Fashion Brand CuteCircuit (패션 브랜드 CuteCircuit에 나타난 패션 공학의 적용 유형과 의미)

  • Kim, Jang-Hyeon;Kim, Young-Sam
    • Fashion & Textile Research Journal
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    • v.20 no.3
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    • pp.245-256
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    • 2018
  • This study considers application types and meanings of fashion engineering by analyzing CuteCircuit. The conclusions of this study are as follows. The application type of fashion engineering shown in CuteCircuit is first, electronic fashion, which attaches LED or WL on the surface of clothes to express the decorative function in clothes as optical light change, ultimately performing one-dimensional function. Second, interactive fashion is a medium in which clothing connects human beings with other human beings with sensors that can recognize the changes in tactile or movement with the wearer or with a light source that can visualize the emotional changes of the wearer. Third, scientific fashion has emerged as a new type of fashion in which new materials introduced in the field of engineering are fused with clothing to expand functionality and aesthetics. The meanings of fashion engineering in CuteCircuit is first, trying to conceptualize a new beauty as an open fashion that can freely change with the creation of a dual beauty by combining analog and digital sensibility. Second is the external representation of human psychological change or emotional exchange, which helps to form a consensus by understanding and exchanging emotions of different people. Third, reorganization of apparel pursuing integrated value appeared. Clothing, as a connection body in which the human body and the mechanical environment are combined with each other, is reestablished as a product of variable body that can embody an integrated value that includes various characteristics and can be diversified appropriately in any circumstance.

Fabrication Process and Power Generation Characteristics of Thermoelectric Thin Film Devices for Micro Energy Harvesting (미세 열에너지 하비스팅용 열전박막소자의 형성공정 및 발전특성)

  • Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.67-74
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    • 2018
  • Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

Secondary Phase and Defects in Cu2ZnSnSe4 Solar Cells with Decreasing Absorber Layer Thickness

  • Kim, Young-Ill;Son, Dae-Ho;Lee, Jaebaek;Sung, Shi-Joon;Kang, Jin-Kyu;Kim, Dae-Hwan;Yang, Kee-Jeong
    • Current Photovoltaic Research
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    • v.9 no.3
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    • pp.84-95
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    • 2021
  • The power conversion efficiency of Cu2ZnSnSe4 (CZTSe) solar cells depends on the absorber layer thickness; however, changes in the characteristics of the cells with varying absorber layer thickness are unclear. In this study, we investigated the changes in the characteristics of CZTSe solar cells for varying absorber layer thickness. Five absorber thicknesses were employed: CZTSe1 2.78 ㎛, CZTSe2 1.01 ㎛, CZTSe3 0.55 ㎛, CZTSe4 0.29 ㎛, and CZTSe5 0.15-0.23 ㎛. The efficiency of the CZTSe solar cells decreased as the absorber thickness decreased, resulting in power conversion efficiencies of 10.45% (CZTSe1), 8.67% (CZTSe2), 7.14% (CZTSe3), 3.44% (CZTSe4), and 1.54% (CZTSe5). As the thickness of the CZTSe absorber layer decreased, the electron-hole recombination at the grain boundaries and the absorber-back-contact interface increased. This caused an increase in the current loss, owing to light loss in the long-wavelength region. In addition, as the thickness of the CZTSe absorber layer decreased, more ZnSe was produced, and the resulting defects and defect clusters led to an open-circuit voltage loss.

Approximate Equivalent-Circuit Modeling and Analysis of Type-II Resonant Immittance Converters

  • Borage, Mangesh;Nagesh, K.V.;Bhatia, M.S.;Tiwari, Sunil
    • Journal of Power Electronics
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    • v.12 no.2
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    • pp.317-325
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    • 2012
  • Resonant immittance converter (RIC) topologies can transform a current source into a voltage source (Type-I RICs) and vice versa (Type-II RICs), thereby making them suitable for many power electronics applications. RICs are operated at a fixed frequency where the resonant immittance network (RIN) exhibits immittance conversion characteristics. It is observed that the low-frequency response of Type-II RINs is relatively flat and that the state variables associated with Type-II RINs affect the response only at the high frequencies in the vicinity of the switching frequency. The overall response of a Type-II RIC is thus dominated by the filter response, which is particularly important for the controller design. Therefore, an approximate equivalent circuit model and a small-signal model of Type-II RICs are proposed in this paper, neglecting the high-frequency response of Type-II RINs. While the proposed models greatly simplify and speed-up the analysis, it adequately predicts the open-loop transient and small-signal ac behavior of Type-II RICs. The validity of the proposed models is confirmed by comparisons of their results with those obtained from a cycle-by-cycle simulation and with an experimental prototype.