• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.233-240
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• 2023

p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiO_x structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiO_x layer achieves the highest implied open-circuit voltage (iV_oc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiO_x) and poly-silicon layer (poly-Si), as well as the advancement of the SiO_x and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.6
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• pp.4013-4018
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• 2014

A 0.45 $cm^2$ DSSC device with a glass/FTO/blocking layer/$TiO_2$/N719(dye)/electrolyte/50 nm-Pt/50 nm-Au/FTO/glass was prepared to examine the stability of the Au/Pt bilayered counter electrode (CE) with electrolyte and the energy conversion efficiency (ECE) of dye-sensitized solar cells (DSSCs). For comparison, a 100 nm-thick Pt only CE DSSC was also prepared using the same method. The photovoltaic properties, such as the short circuit current density ($J_{sc}$), open circuit voltage ($V_{oc}$), fill factor (FF), and ECE, were checked using a solar simulator and potentiostat with time after assembling the DSSC. The microstructure of the Au/Pt bilayer was examined by optical microscopy after 0~25 minutes. The ECE of the Pt only CE-employed DSSC was 4.60 %, which did not show time dependence. On the other hand, for the Au/Pt CE DSSC, the ECEs after 0, 5 and 15 minutes were 5.28 %, 3.64 % and 2.09 %, respectively. The corrosion areas of the Au/Pt CE determined by optical microscopy after 0, 5, and 25 minutes were 0, 21.92 and 34.06 %. These results confirmed that the ECE and catalytic activity of Au/Pt CE decreased drastically with time. Therefore, a Au/Pt CE-employed DSSC may be superior to the Pt only CE-employed one immediately after integration of the device, but it would degrade drastically with time.

• Macromolecular Research
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• v.17 no.12
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• pp.963-968
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• 2009

Liquid crystal (LC; E7 and/or ML-0249)-embedded, poly(vinylidenefluoride-co-hexafluoropropylene) (PVdF-co-HFP)-based, polymer electrolytes were prepared for use in dye-sensitized solar cells (DSSCs). The electrolytes contained 1-methyl-3-propylimidazolium iodide (PMII), tetrabutylammonium iodide (TBAI), and iodine ($I_2$), which participate in the $I_3^-/I^-$ redox couple. The incorporation of photochemically stable PVdF-co-HFP in the DSSCs created a stable polymer electrolyte that resisted leakage and volatilization. DSSCs, with liquid crystal(LC)-embedded PVdF-co-HFP-based polymer electrolytes between the amphiphilic ruthenium dye N719 absorbed to the nanocrystalline $TiO_2$ photoanode and the Pt counter electrode, were fabricated. These DSSCs displayed enhanced redox couple reduction and reduced charge recombination in comparison to that fabricated from the conventional PVdF-co-HFP-based polymer electrolyte. The behavior of the polymer electrolyte was improved by the addition of optimized amounts of plasticizers, such as ethylene carbonate (EC) and propylene carbonate (PC). The significantly increased short-circuit current density ($J_{sc}$, $14.60\;mA/cm^2$) and open-circuit voltage ($V_{oc}$, 0.68 V) of these DSSCs led to a high power conversion efficiency (PCE) of 6.42% and a fill factor of 0.65 under a standard light intensity of $100\;mW/cm^2$ irradiation of AM 1.5 sunlight. A DSSC fabricated by using E7-embedded PVdF-co-HFP-based polymer electrolyte exhibited a maximum incident photon-to-current conversion efficiency (IPCE) of 50%.

• Membrane Journal
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• v.21 no.3
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• pp.213-221
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• 2011

Using poly(ethylene oxide) (PEO) as a polymer host, poly(ethylene glycol) (PEG) as a plasticizer, potassium iodide and iodine as sources of $I^-/I_3^-$, polymer electrolyte membranes were prepared. Based on the polymer electrolytes, solid-state dye-sensitized solar cell (DSSC)s were fabricated. The content of PEG in the electrolyte was controlled to be 95%. The mole number of KI per 1 mole of EO ([KI]/[EO] ratio) in the electrolyte was changed to be 0.022, 0.044, 0.066 and 0.088. The electrolyte membrane showed wax phase in ambient temperature. The ionic conductivity increased with increasing KI content to reach the maximum value at which [KI]/[EO] ratio is 0.066. After the maximum value, the ionic conductivity decreased with increasing KI content. In the case of DSSC, the Voc decreased continuously with increasing KI content in the polymeric electrolyte membrane. The $J_{SC}$ increased with increasing KI content to show maximum value at which [KI]/[EO] ratio is 0.044. In the higher KI content region, $J_{SC}$ value decreased with increasing KI content.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.28-29
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• 2005

본 논문에서는 MEH-PPV와 DFPP의 폴리머 물질을 이용하여 photovoltaic device가 제작되었고, 그림 1에 두 물질의 분자 구조가 보여진다. Photovoltaic cell의 전기-광학적 특성은 활성층의 폴리머 물질에 의해 결정된다. 이러한 특성을 알아보기 위해서 홉수 스펙트럼이 측정되었다. DFPP는 chloroform, chlorobenzen, THF, acetone에 잘 녹았으며, 본 논문에서는 chloroform이 용매로 사용되었다. 제작 공정은 다음과 같다. 인듐 주석 산화물 (ITO)이 증착된 유리기판은 photolithography 공정을 거친 후, 왕수(HNO$_{3}$ + HCL)로 식각됨으로서 전극의 패턴이 제작되었다. 그리고 ITO 전극 패턴 된 유리기판 위에 PEDOT (CH8000, Baytron)이 코팅된 후 Ar이 주입되는 Convection Oven을 이용하여 120$^{\circ}$C에서 2시간 동안 열처리되어 수분이 제거되었다. 활성층에는 MEH-PPV와 DFPP가 9:1과 2.33:1로 혼합된 폴리머가 사용되었고, 이것은 0.3 %w.t.가 되도록 chloroform에 넣어 5시간 동안 스핀바를 돌려서 용해되었다. 이 용액은 ITO 전극 패턴이 형성된 글라스 위에 3000 rpm으로 45 초간 스핀코팅 되었다. 이 때 얻어진 유기물 박막층은 80$^{\circ}$C의 Ar이 주입되는 convection oven에서 3시간 동안 경화되었다. 경화된 단층 유기물 박막층 위에 Li-Al이 1000 ${\AA}$의 두께로 증착되어 전극이 형성되었고, 이후 질소가 채워진 globe box에서 소자는 encapsulation되어 산소와 수분에 대한 영향으로부터 차단되었다. 상기의 공정으로 제작된 소자의 박막구조는 그림 2에서 보여진다. 그림 3은 MEH-PPV와 DFPP를 혼합했을 때의 흡수 스펙트럼이다. 최대 흡수 파장은 511 nm였다. 그리고 photovoltaic cell의 V-I 특성 결과가 그림 4와 같이 측정되었다. 측정에서는 300${\sim}$700 nm의 파장대를 갖는 태양광 모사계가 사용되었고, 셀의 면적은 10 mm$^{2}$였다. 그림 5의 I-V 특성으로부터 MEH-PPV와 DFPP가 9:1 로 혼합했을 때보다 2.33:1 로 혼합했을 때, photovoltaic device의 효율이 향상됨을 확인할 수 있다. 빛이 75 mW/cm$^{2}$ 의 세기로 조사될 때 9:1과 2.33:1로 혼합된 소자의 open circuit voltage (V$_{oc}$)는 비슷하지만, short circuit current Density (J$_{sc}$)는 각각 -1.39 ${\mu}$A/cm$^{2}$ 와 -3.72${\mu}$A/cm$^{2}$ 로 약 2.7배 정도 증가되었음을 볼 수 있다. 이러한 결과를 통해 electron acceptor인 DFPP의 비율이 높아질수록 photovoltaic cell의 conversion efficiency가 더 크게 됨을 확인할 수 있다. 그러므로 효율이 최대가 되는 두 폴리머의 혼합 비율이 최적화되는 조건을 찾는 것은 매우 중요한 연구가 될 것이다.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.15-20
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• 2011

Poly[2,3-dimethyl-5,8-dithiophene-2-yl-quinoxaline-alt-9,9-dihexyl-9H-fluorene] (PFTQT) and poly[2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline-alt-10-hexyl-10H-phenothiazine (PPTTQT) based on 2,3-dimethyl-5,8-dithiophen-2-yl-quinoxaline weresynthesized by Suzuki coupling reaction. All polymers were soluble in common organic solvents such as chloroform, chlorobenzene, o-dichlorobenzene, tetrahydrofuran (THF) and toluene. The maximum absorption wavelength and band gap of PFTQT were 440 nm and 2.30 eV, and PPTTQT were 445 nm and 2.23 eV, respectively. The HOMO and LUMO energy level of PFTQT were -6.05 and -3.75 eV, and PPTTQT were -5,89 and -3.66 eV, respectively. The organic photovoltaic devices based on the blend of polymer and PCBM (1 : 2 by weight ratio) were fabricated. Efficiencies of devices were 0.24% (PFTQT) and 0.16% (PPTTQT), respectively. The short circuit current density ($J_{sc}$), fill factor (FF), and open circuit voltage ($V_{oc}$) of the device with PFTQT were $0.97mA/cm^2$, 29% and 0.86 V, and the device based on PPTTQT were $0.80mA/cm^2$, 28% and 0.71 V, 31% and 0.71 V, respectively, under air mass (AM) 1.5 G and 1 sun condition ($100mA/cm^2$).

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.