• Journal of applied mathematics & informatics
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• v.39 no.5_6
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• pp.805-811
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• 2021

Currently, batteries use commonly as energy sources for mobile electric devices. Due to the high density of energy, the energy storage state of a battery is very important information. To know the battery's energy storage state, it is necessary to find out the open state voltage of the battery. The open state voltage calculates with a mathematical model, but the computation of the real time state is complicated and requires many calculations. Therefore, the state observer designs to estimate in real time the battery open-circuit voltage as disturbance including model error. Using the estimated open voltage and applying it to the state estimation algorithm, we can estimate the charge. In this study, we first estimate the open-circuit voltage and design an estimation algorithm for estimating the state of battery charge. This includes errors in the system model and has a robust characteristic to noise. It is possible to increase the precision of the charge state estimation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.280-280
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• 2010

태양전지의 효율을 증가시키는 방법에는 표면 패시베이션, 접촉면적의 가변, back contact의 두께 가변 등이 있다. 특히, back contact 두께의 가변을 통하여 open circuit voltage의 감소를 최소화 할 수 있을 것이라고 전망 되고 있다. open circuit voltage 은 회로가 개방된 상태로, 무한대의 임피던스가 걸린 상태에서 빛을 받았을 때 태양전지의 양단에 전위차가 형성된다. 본 연구에서는 back contact 두께 가변에 따른, open circuit voltage의 변화를 확인하고 분석하는 것에 그 일차적인 초점을 두었다. 또한, open circuit voltage 뿐만 아니라, short circuit current density, fill factor, series resistance 등의 분석을 하였으며, efficiency를 계산하여 back contact 두께의 가변에 따른 소자 특성의 변화 분석을 통하여 최적화된 back contact위 두께를 연구하였다. 접촉면적에 따른 소자의 성능 변화는 후면 $SiN_X$ 70nm가 open circuit voltage를 15mV ~ 20mV 감소시키는 것을 확인 할 수 있었다. 그 이유는 $SiN_X$가 너무 두꺼우면 BSF 덜 형성되기 때문이다. 최종적으로 $SiN_X$ 두께를 얇게하면 open circuit voltage 의 감소를 최소화 할 수 있을 것이라는 판단을 할 수 있다. 이에, back contact인 $SiN_X$ 두께 가변에 따른 open circuit voltage의 변화를 확인하였다. $SiN_X$ 두께가 증가함에 따라, Positive charges 와 Hydrogen 함유량이 증가하며, 이에 BSF 두께 감소하였다. 또한, $SiN_X$ 두께가 감소함에 따라 Doping barrier로서 역할을 못하게 되어 후면에 n+층 형성되어 open circuit voltage가 급격히 하락하였다. 본 연구에서는 back contact인 $SiN_X$ 두께를 10nm, 30nm, 50nm, 80nm 로 가변하며 실험을 진행하였다.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.195-198
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• 2010

It has been considered to apply GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) for low-temperature SOFC electrolytes because it has higher ionic conductivity than YSZ at low temperature. However, open circuit voltage with using GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) electrolyte in SOFCs, becomes lower than using YSZ (8 mol% Yttria stabilized Zirconia) electrolyte because GDC has electronic conductivity. In this work, the effect of changing GDC electrolyte thickness on the open circuit voltage has been investigated. Ni-GDC anode-supported unit cells were fabricated as follows. Mixed NiO-GDC powders were pressed and pre-sintered at $1200^{\circ}C$. And then, GDC electrolyte material was dip-coated on the anode and sintered at $1400^{\circ}C$. Finally the LSCF-GDC cathode material was screen-printed on the electrolyte and sintered at $1000^{\circ}C$. Electrolyte thickness was controlled by the number of dip-coating times. Open circuit voltage was measured depending on electrolyte thickness at $650^{\circ}C$ and found that the thicker GDC electrolyte was, the better OCV was.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1087-1096
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• 2016

This paper reports an investigation conducted on two diagnostic methods based on the switching voltage pattern of IGBT open-circuit faults in voltage-source inverters (VSIs). One method was based on the bridge arm pole voltage, and the other was based on bridge arm line voltage. With an additional simple circuit, these two diagnostic methods detected and effectively identified single and multiple open-circuit faults of inverter IGBTs. A comparison of the times for the diagnosis and anti-interference features between these two methods is presented. The diagnostic time of both methods was less than 280ns in the best case. The diagnostic time for the method based on the bridge arm pole voltage was less than that of the method based on the bridge arm line voltage and was 1/2 of the fundamental period in the worst case. An experimental study was carried out to show the effectiveness of and the differences between these two methods.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.4
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• pp.93-102
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• 1995

The purpose of this paper is to analyze the streaming electrification mechanism (SEM) generated in UHV transformer. This experiment used Couette Charger and interpreted the mechanism hydromechanically and electromagnetically. This work estimated the turbulent core density ($\rho$o) by measuring the short circuit current (isc) and the open circuit voltage (νoc) generated in Couette Charger and also studied the changes of the short circuit (isc), the open circuit voltage (νoc), the turbulent core density ($\rho$o) and the conductivity ($\sigma$) with adding BTA to restrain streaming electrification. as a result adding BTA increased the conductivity of oil and decreased the turbulent core density($\rho$o).

• Journal of Power Electronics
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• v.17 no.3
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• pp.725-732
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• 2017

This paper proposed a real-time, low-cost, fast transistor open-circuit fault diagnosis method for voltage-source inverter fed induction motors. A transistor open-circuit changes the symmetry of the inverter topology, leading to different similarities among three phase load currents. In this paper, dynamic time warping is proposed to describe the similarities among load currents. The proposed diagnosis is independent of the system model and needs no extra sensors or electrical circuits. Both simulation and experimental results show the high efficiency of the proposed fault diagnosis method.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.45-51
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• 2008

HID(High Intensity Discharge) search lamp for shipment requires a high open circuit and output current compare than vehicle. This paper presents a soft-start open circuit voltage and constant current sequence control method for 2.5[kW] HID search lamp. The proposed method controls the opal circuit voltage and discharge current of HID lamp according to ignition signal with a simple 8-bit micro-processor and PWM device. For the stable control of lamp, micro-processor checks the output voltage and current. And the checked signals are compared with ignition signal and changes the control mode for stable operation. An ignition signal and micro-processor change the control mode from open circuit voltage contort to constant current control. The proposed control scheme is verified from experimental tests of 2.5[kW] HID search lamp for shipment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2487-2494
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• 2012

In this paper, a thermal energy harvesting circuit with MPPT control is designed. MPPT(Maximum Power Point Tracking) control function is implemented using the linear relationship between the open-circuit voltage of a thermoelectric generator(TEG) and its MPP voltage. The designed MPPT control circuit traces the maximum power point by periodically sampling the open circuit voltage of a TEG, makes the reference voltages using sampled voltage and delivers the maximum available power to load. Simulation results show that the maximum power efficiency of the designed circuit is 94%. The proposed thermal energy harvesting circuit is designed with $0.35{\mu}m$ CMOS process, and the chip area except PAD is $1168.7{\mu}m{\times}541.3{\mu}m$.