• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.107.2-107
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• 2001

We propose portable equipment that monitors a current and potential on high-potential power transmission lines. In the equipment, a current and voltage sensor are attached to a hollow insulator that supports a power transmission line: A current on a power line is detected by an air-core solenoidal coil clamped to the line and the detected current signal is transmitted to the ground station by using optical data link, A potential on a power transmission line is detected by a high resistance element, zinc oxide (ZnO) that acts as a potential divider between the power line and the ground. The equipment does not require high potential insulators and magnetic cores which. This leads to the following advantages of the equipment: (a) It is easily installed owing to its small size and its simple structure; (b) It operates in low ...

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.337-342
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• 2000

We fabricated resistive superconducting fault current limiters based on YB $a_{2}$/C $u_{3}$/ $O_{7}$ thin films and investigated their quench propagation characteristics. The YB $a_{2}$/C $u_{3}$/ $O_{7}$ films was coated with a gold layer and patterned into 1 mm wide meander lines by photolithography. The quench was concluded to start locally and propagates until completed. The quench propagation characteristics were explained based on the heat transfer within the film as well as between the film and the surrounding liquid nitrogen. The quench completion time depended strongly on potential fault current amplitude and not significantly on fault angle which indicates that the quench propagation speed is affected more by heat dissipation rate than by fault current increase rate. The quench completion time was 1 msec at the fault current of 65 $A_{peak/{\ak}}$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.141-147
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• 2017

Mechanical shim is an advanced technology for reactor power and axial offset control with control rod assemblies. To address the adverse accuracy impact on the ex-core power range neutron flux measurements-based axial offset control resulting from the variable positions of control rod assemblies, the lead-lag-compensated in-core self-powered vanadium detector signals are utilized. The prompt ${\gamma}$ current of self-powered detector is ignored normally due to its weakness compared with the delayed ${\beta}$ current, although it promptly reflects the flux change of the core. Based on the features of the prompt ${\gamma}$ current, a method for configuration of the lead-lag dynamic compensator is proposed. The simulations indicate that the method can improve dynamic response significantly with negligible adverse effects on the steady response. The robustness of the design implies that the method is of great value for engineering applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.492-499
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• 2011

This paper describes that the evaluation on operation practicality of Al conductor cable will be used instead of Cu conductor cable. Analysis is divided into two kinds of cases as transmission and distribution. To evaluate that Al conductor line has the insulation strength indeed safely, various analysis and calculation such as single line-to-ground fault current, lightning surge and allowance current were carried. Model was established based on real combined transmission and distribution is being used in utility with EMTP. The analysis results on Al and Cu conductor line were compared each other. It was proved that Al conductor line can be operated instead of Cu conductor line without special insulation problem in transmission and distribution, in electrical view point such as overvoltage and allowance current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.788-792
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• 2010

The yttrium-barium-copper-oxide (YBCO) coated conductor, which supplement the fault of the existing superconducting current-limit materials YBCO thin film, bismuth-strontium-calcium-copper-oxide(BSCCO) wire and bulk, has been improved its mechanical weakness and has high index; hence, after quench YBCO coated conductor could limit the fault current effectively because of fast resistance occurrence speed. Furthermore, it has wide applicable area as an current limit material because it shows different resistance occurrence tendency by the thickness and kind of stabilization material sputtered on the superconducting layer. Therefore, many researchers are carrying out the study of application of YBCO coated conductor to superconducting fault current limiter (SFCL) for making high quality current limit element, based on resistance type. On the other hand, the study for other type except resistance type has been rarely conducted for the application of YBCO coated conductor to SFCL as an current limit element. Consequently, in this study, YBCO coated conductor with different stabilization layer Cu and Stainless steel, is applied to SFCL using iron core and coil, and examine the many index points as an current limit element, such as current limit characteristic, the tendency of resistance occurrence, response time, the temperature trend for stability.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1305-1309
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• 2013

The application of the superconducting fault current limiter (SFCL) in a power distribution system is expected to contribute the voltage-sag suppression of the bus line as well as the fault-current reduction of the fault line. However, the application effects of the SFCL on the voltage sag of the bus line including the fault current are dependent on its application location in a power distribution system. In this paper, we investigated the fault current limiting and the voltage sag suppressing characteristics of the SFCL due to its application location such as the outgoing point of the feeder, the bus line, the neutral line and the 2nd side of the main transformer in a power distribution system, and analyzed the trace variations of the bus-voltage and fault-feeder current. The simulated power distribution system, which was composed of the universal power source, two transformers with the parallel connection and the impedance load banks connected with the 2nd side of the transformer through the power transmission lines, was constructed and the short-circuit tests for the constructed system were carried out. Through the analysis on the short-circuit tests for the simulated power distribution system with the SFCLs applied into its representative locations, the effects from the SFCL's application on the power distribution system were discussed from the viewpoints of both the suppression of the bus-voltage sag and the reduction of the fault current.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.6 no.4
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• pp.364-374
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• 1994

The separation mechanism of the Tsushima Warm Current and the effects of seasonal wind stress on the separation position are studied by use of a barotropic numerical model. The grid spacing of 0.25$^{\circ}$ both in latitude and longitude is used in the model, and Hellerman and Rosenstein's wind (1983) is applied to the sea surface as seasonal wind stress. According to the model results, during winter seasons (from October to March) when northly wind is prevailing, the Tsushima Warm Current is formed by direct separation from the Kuroshio on the continental slope southwest of Kyushu. On the other hand, during summer seasons (from April to September), the Taiwan Current that flows through the Taiwan Strait seems to be the origin of the Tsushima Warm Current. The Kuroshio reaches its maximum transport during winter seasons, and the minimum during summer. The transport of the Taiwan Current shows a phase lag of about 160$^{\circ}$ relative to the Kuroshio. The transport variation of the Tsushima Warm Current agrees with that of the Kuroshio when the former is shifted by 120$^{\circ}$(about 4 months).

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.329-334
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• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.