• 조명전기설비학회논문지
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• 제27권6호
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.14-14
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• 2006

Al2O3 단결정을 기판을 이용하여 HVPE법으로 GaN를 성장한 후 얻어진 GaN wafer는 N-face에 동종인 GaN를 성장하였다. 이때 동종 성장은 Al2O3와의 열팽창계수 차이로 야기된 휨을 제거할 수 있었으며, 양쪽 면은 결합 밀도가 급격히 감소하였다. 또한 표면 분극을 조사하기 위하여 에칭후 SEM 형상과 CBED를 조사 하였으며 특히 N-face에서의 표면 형상과 PL의 변화를 조사하였다. 이때 N-face의 변화는 초기의 N-face의 특성과 다른 양상을 보여 주고 있으며, DXRD와 PL 분석 걸과 결정성은 두배나 높은 결과를 보여주고 있다.

• 전자공학회논문지A
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• 제31A권10호
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• pp.87-93
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• 1994

Ohmic contacts between Au and p-HgHg_{0.7}Cd_{0.3}Te$ with low specific contact resistance have been obtained. The contact region of the wafer is first pre-heated for 5 seconds in a rapid thermal processing equipment. The temperature reaches a maximum value of about 200$^{\circ}C$ at the end of the 5 seconds. Next, a thin Au film is formed on the contact region by immersing the sample in AuCl$_{3}$ solution. the sample is then post-annealed in the same condition as the pre-heating after Pb/In pad metals are deposited on the electroless Au contacts. The specific contact resistance measured by transmission line model is 5${\times}10^{-3}{\Omega}cm^{2}$ at 80K. RBS and differential Hall measurement data suggest that the above low resistance ohmic contact is ascribed to surface traps and increased gold diffusion rate.

• Journal of Microbiology and Biotechnology
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• 제27권11호
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• pp.2037-2043
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• 2017

The surface protein hemagglutinin (HA) mediates the attachment of influenza virus to host cells containing sialic acid and thus facilitates viral infection. Therefore, HA is considered as a good target for the development of diagnostic tools for influenza virus. Previously, we reported the isolation of single-stranded aptamers that can distinguish influenza subtype H1 from H5. In this study, we describe a method for the selective electrical detection of H1 using the isolated aptamer as a molecular probe. After immobilization of the aptamer on Si wafer, enzyme-linked immunosorbent assay (ELISA) and field emission scanning electron microscopy (FE-SEM) showed that the immobilized aptamer bound specifically to the H1 subtype but not to the H5 subtype. Assessment by cyclic voltammetry (CV) also demonstrated that the immobilized aptamer on the indium thin oxide-coated surface was specifically bound to the H1 subtype only, which was consistent with the ELISA and FE-SEM results. Further measurement of CV using various amounts of H1 subtype provided the detection limit of the immobilized aptamer, which showed that a nanomolar scale of target protein was sufficient to produce the signal. These results indicated that the selected aptamer can be an effective probe for distinguishing the subtypes of influenza viruses by monitoring current changes.

• 한국세라믹학회지
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• 제35권8호
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• 한국산업융합학회 논문집
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• 제23권6_2호
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• pp.1051-1058
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• 2020

The chemical mechanical planarization (CMP) is a process of physically and chemically polishing the semiconductor substrate. The planarization quality of a substrate can be evaluated by the within wafer non-uniformity (WIWNU). In order to improve WIWNU, it is important to manage the pad profile. In this study, a device capable of non-contact measurement of the pad thickness profile was developed. From the measured pad profile, the profile of the pad surface and the groove was extracted using the envelope function, and the pad thickness profile was derived using the difference between each profile. Thickness profiles of various CMP pads were measured using the developed PMS and envelope function. In the case of IC series pads, regardless of the pad wear amount, the envelopes closely follow the pad surface and grooves, making it easy to calculate the pad thickness profile. In the case of the H80 series pad, the pad thickness profile was easy to derive because the pad with a small wear amount did not reveal deep pores on the pad surface. However, the pad with a large wear amount make errors in the lower envelope profile, because there are pores deeper than the grooves. By removing these deep pores through filtering, the pad flatness could be clearly confirmed. Through the developed PMS and the pad thickness profile calculation method using the envelope function, the pad life, the amount of wear and the pad flatness can be easily derived and used for various pad analysis.

• 소성∙가공
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• 제15권1호
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• pp.3-8
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• 2006

The demand fer small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased by using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable fur mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-replication process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the surface profiles of master, mold and molded pattern were measured by optical scanning profiler. The geometrical deviation between the master and the molded DOE was less than $0.1{\mu}m$. The diffraction efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

• 융합정보논문지
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• 제10권6호
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• pp.28-34
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• 2020

본 논문에서는 VCSEL (Vertical Cavity Surface Emitting Laser) 레이저를 만드는 구조와 유사한 GaAs 웨이퍼상에 MOCVD (Metal Organic Chemical Vapor Deposition) 장비로 GaAs와 AlGaAs 에피층을 형성시킨 구조를 사용한다. 3차원 공진현상에 의해 자연 발생되는 광양자테 (PQR: Photonic Quantum Ring) 소자를 건식 식각 방법인 CAIBE (Chemically Assisted Ion Beam Etching) 기술로 제작하였지만, 진공 분위기에서 진행해야 하는 문제점 때문에 저가격으로 쉽게 소자를 제작할 수 있는 방법이 연구되었고, 그 결과 인산, 과산화수소, 메탄올이 혼합된 용액의 습식식각 기술로 가능성을 확인하였으며, 이 방법을 적용하여 소자를 제작한 내용에 대해 논한다. 또한, 제작된 광소자의 스펙트럼을 측정하였고, 이 결과들을 이론적으로 해석하여 얻은 파장값과 비교한다. 광양자테 소자는 3차원 형상으로 세포를 모델링하거나, 디스플레이 분야로의 응용이 가능할 것으로 기대한다.

• 대한기계학회논문집B
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• 제37권9호
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• pp.823-828
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• 2013

실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

• 전자공학회논문지A
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• 제30A권12호
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.