• Proceedings of the IEEK Conference
• /
• 2004.08c
• /
• pp.482-485
• /
• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.6 no.5
• /
• pp.621-627
• /
• 2011

In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

• Macromolecular Research
• /
• v.11 no.5
• /
• pp.352-356
• /
• 2003

The objectives of this study were to investigate the influence of gamma irradiation for sterilization on poly(D,L-lactide-co-glycolide) (PLGA) with different molecular weight and the effect of gamma irradiation on the release behavior of 1,3-bis(2-chloroethyl)-1-nitrosourea (BCNU, carmustine) from PLGA wafer with various irradiation doses. The effect of gamma irradiation on PLGA was evaluated by gel permeation chromatography (GPC), differential scanning calorimetry (DSC), and electron paramagnetic resonance (EPR). The weight average molecular weight (M$_{w}$) and glass transition temperature (T$_{g}$) of PLGA decreased after gamma irradiation. The extent of M$_{w}$ reduction was dependent on irradiation dose and PLGA molecular weight. Using EPR spectroscopy, we successfully detected gamma irradiation induced free radicals in PLGA. The gamma irradiation increased the release rate of BCNU from PLGA wafer at applied irradiation doses except 2.5 Mrad of irradiation dose in this study.study.

• Proceedings of the KIEE Conference
• /
• 2004.11c
• /
• pp.478-480
• /
• 2004

다이아몬드 톱날을 이용한 얇은 Si 웨이퍼의 기계적인 다이싱은 chipping, crack 등의 문제점을 발생시킨다. 또한 stacked die 나 multi-chip등과 같은 3D-WLP(wafer level package)에서 via를 생성하기 위해 현재 사용되는 화학적 etching은 공정속도가 느리고 제어가 힘들며, 공정이 복잡하다는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해 현재 연구되고 있는 분야가 레이저를 이용한 웨이퍼 다이싱 및 드릴링이다. 본 논문에서는 UV 레이저를 이용한 얇은 Si 웨이퍼 다이싱 및 드릴링 시스템에 대해 소개하고, 웨이퍼 다이싱 및 드릴링 실험결과를 바탕으로 적절한 레이저 및 공정 매개변수에 대해 설명한다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2002.04a
• /
• pp.38-42
• /
• 2002

In the recent, electro-rheological fluid has been used for micro polishing of the 3-dimensional micro-aspherical lens and some sectional parts with defects on the wide flat wafer. The ER fluid has the properties that its viscosity has drastic changed under some electric fields. Therefore, ER fluid can be applicable to the micro polishing fur some parts using these properties. In this paper, the experimental device has been constructed using the precision milling machine in order to micro polishing far some sectional parts of a 4 inches wafer It is consisted of a small steel electrode, a wafer fixture, DC10mA and 5KV power supply unit, and a controller unit. Using the ER experimental device, possibility of amending for wide flat wafer and micro polishing of some micro part has been analyzed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.1140-1144
• /
• 2005

A plastic-based CE (capillary electrophoresis) microchip was fabricated by hot embossing process. A Si mold was made by wet etching process and a PMMA wafer was cut off from 1mm thick PMMA sheet. A micro-channel structure on PMMA substrate was produced by hot embossing process using the Si mold and the PMMA wafer. A vacuum assisted thermal bonding procedure was employed to seal an imprinted PMMA wafer and a blank PMMA wafer. The results of microscopic cross sectional images showed dimensions of channels were well preserved during thermal bonding process. In our procedure, the deformation amount of bonding process was below 1%. The entire fabrication process may be very useful for plastic based microchip systems.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.850-853
• /
• 1992

A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.1 s.10
• /
• pp.35-41
• /
• 2005

An air levitation type wafer transfer system is composed of control and transfer track. Wafer transfer speed is mainly affected by air velocity of propulsion nozzle. In this study, the propulsion force coefficient was evaluated experimentally for the nozzle with 0.5mm, 0.8mm, and 1.0mm diameter. As a result, the propulsion force was largest in the smallest size of nozzle at same air velocity. The propulsion force coefficient of nozzle increases with reducing diameter of nozzle. This increment of propulsion force coefficient was enlarged remarkably at the 0.5mm diameter of nozzle.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.4 s.235
• /
• pp.632-638
• /
• 2005

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

• New & Renewable Energy
• /
• v.5 no.1
• /
• pp.26-31
• /
• 2009

The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.