• Journal of Energy Engineering
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• v.23 no.1
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• pp.21-32
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• 2014

This study has analyzed whether the virtuous cycle of value-added between the processes within the company has formed and whether the virtuous ecosystem between the processes within the industry has been built through the analysis of value chain(VC) and value system(VS) targeting the Korean photovoltaic companies. For a study method, after conducting a survey on the companies, a regression analysis was performed on the causal relationship between the process within the VC and VS. Based on the results of the analysis, for the VC of the Korean photovoltaic industry, an increase in the R&D support from the government has led to the increase in the investment of R&D for the related industry, and the increase in the investment of R&D has contributed to the increase in the growth of its productivity, and the growth in the productivity of R&D has influenced the increase in the production of solar products. In addition, the reduction of photovoltaic production cost for the company has influenced the increase of recurring profit margin compared to the sales. However it was shown that the increase in the company's production volume does not contribute to the reduction of production cost. Meanwhile, the increase in recurring profit margin compared to the sales were influencing the increase in the production volume but it was shown that the increase in the company's investment of R&D was not a contributing factor thus it was not included in the virtuous cycle. It was analyzed that the VS was shown not to influence all other processes within the industry except for the module companies where the increase in the recurring profit margin compared to the sales was influenced by the increase in the recurring profit margin compared to the sales of solar cell companies. This shows that the virtuous industrial ecosystem which should be made under the mutual cooperation by the ingot, wafer, solar cell, module and system companies are yet incomplete.

• Journal of Oral Medicine and Pain
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• v.30 no.1
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• pp.69-77
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• 2005

The purposes of this study were to develop and introduce a novel intraoral appliance for bruxism composed of power switch and biofeedback device and further to examine inter- and intra-reliability of the appliance prior to clinical tests. The newly-developed appliance consisted of detection sensors, a central processing unit (CPU), a reactor and a storage unit and a displayer. Compact-sized, waterproof switches were selected as bruxism detection sensor and any sensor activation by clenching or grinding event was processed at the CPU and transmitted, by radio wave, to the reactor and storage unit and triggered auditory or vibratory signal, subsequently producing biofeedback to the patient with bruxism. The data on bruxing event in the storage unit can be displayed on the computer, making it possible analyzing frequency, duration and nature of bruxism. Cast models were obtained from ten volunteers with normal occlusion to evaluate reliability of the appliances. For inter-operator reliability on the intraoral appliances, each operator of the two fabricated the appliance for the same subject and compared the minimal contact forces provoking auditory biofeedback reaction in vertical, lateral and central directions. Intra-operator reliability was also investigated on the appliances made by a single operator at two separate times with an interval of two days. Conclusively, the newly-developed appliance is compact and safe to use in oral circumstance and easy to make. Furthermore, it had to be proven reliability excellent enough to apply in clinical settings. Thus, it is assumed that this appliance with the processor and the storage of data and auditory or vibratory biofeedback function is available and useful to analyze and control bruxism.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

• Korean Journal of Ecology and Environment
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• v.39 no.1 s.115
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• pp.100-109
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• 2006

This study evaluated the effects of water velocity, substrates, and phosphorus concentrations on the growth of filamentous periphytic algae (FPA) in the two types of artificial channel systems using treated wastewater. Controlled parameters included 5 ${\sim}$ 15 cm $s^{-1}$ for the water velocity; 10 and 20 mm wire meshes, natural fiber net, gravel and tile for the substrates: and 0.05 ${\sim}$ 1.0 mgP $L^{-1}$ for the P concentration. Algal growth rate of FPA was compared using both chi. a and dry weight change with time. Under the controlled water velocity range, the growth of FPA increased with the velocity, but the maximum growth rate was shown in the velocity of 10 cm $s^{-1}$. The substrate that showed the maximum growth of FPA differed between the artificial channel and indoor channel, due to the influence of suspended matters which caused the clogging of the meshed substrates. Under the controled range of P concentration, the growth rates of all three FPA species (Spirogyra turfosa, Oedogonium fovelatum, Rhizoclonium riparium) increased with the P increase, but they showed the differential growth rates among different P concentrations. The results of this study suggest that under the circumstance having an large amount of nutrients FPA develop the biomass rapidly and that even a little increase over the threshold velocity causes the detachment of filamentous periphytic algae. Thus, FPA dynamics in eutrophic streams, such as those receiving treated wastewater, seem to be sensitive to the water velocity. On the other hand, detached algal filaments could deteriorate water quality and ecosystem function in receiving streams or down-stream, and thus they need to be recognized as an important factor in water quality management in eutrophic streams.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Korean Journal of Agricultural and Forest Meteorology
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• v.5 no.3
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• pp.158-165
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• 2003

This study was conducted to reveal the role of meteorological elements on the habitat characteristics and vegetative structure for S. commixta natural populations at Ulleung Island. Potential Evapotranspiration(PET) by elevation of Ulleung Island was estimated using Thornthwaite's climatology estimating method. Also, Warm Index (WI), Coldness Index (CI) and vegetative composition by elevation were determined. The following results were obtained: The S. commixta trees wire mainly distributed from an elevation of 300 m to 900 m. The WI and CI were about 66.8∼95.0, -21.5∼-7.7, respectively. Water deficit by precipitation and Potential Evapotranspiration (PET) mainly occurred from March to October at all elevations. But wafer deficits diminished with increased elevation. The apparent species in S. commixta natural populations at Ulleung Island were: 10 tree layer species, 17 subtree layer species, and 25 species in the shrub layer. In the tree layer, S. commixta was dominant with the highest value of 46.85, then Fagus crenate 13.43, Acer mono and Tilia amurensis 12.41 and 12.03, respectively. In the subtree layer, A. mono was dominant with the highest value of 13.16, then F. crenata 12.68, Acer pseudo-sieboldianum and S. commixta 11.37 and 10.76, respectively. Dominant species and IV values in the shrub layer were Sasa borealis (22.09) and Rhododendron brachycarpum (10.51). The S. commixta natural forests were in a relatively stable rendition because of the even distribution of its various indexes: the species diversity index of Shannon, the evenness index and dominance were 0.6199∼1.1390, 0.6199∼0.8825 and 0.1852∼0.3801, respectively.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.