• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.12
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• pp.987-993
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• 2013

Korean Utility Helicopter(KUH) is the first korean-developed helicopter. Its first flight was performed in March 2010 and then its development was completed successfully by June 2012. During flight test phase, KUH faced various vibration problems and appropriate vibration-reduction devices were designed and applied to solve the problems. The vibration-reduction devices were applied to main rotor blades, main gear box(MGB) supporting structure, cockpit, cabin and pilot seats to reduce rotor-induced 4/rev vibration. Also, dome-fairing was introduced in order to reduce the tail-shake vibration. This paper shows design technique and flight test results for vibration-reduction devices that have been incorporated into KUH.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.44-48
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• 2014

A liquid nitrogen-cooled prepolarization ($B_p$) coil made for ultra-low field nuclear magnetic resonance and magnetic resonance imaging (ULF-MR) designed to generate 7 mT/A was fabricated. However, with suspected internal insulation failure, the coil was investigated in order to find out the source of the failure. This paper reports detailed build of the failed $B_p$ coil and a number of analysis methods utilized to figure out the source and the mode of failure. The analysis revealed that pyrolytic graphite sheet linings put on either sides of the coil for better thermal conduction acted as an electrical bridge between inner and outer layers of the coil to short out the coil whenever a moderately high voltage was applied across the coil. A simple model circuit simulation corroborated the analysis and further revealed that the failed insulation acted effectively as a damping resistor of $R_{d,eff}=6{\Omega}$ across the coil. This damping resistance produced a 50 ms-long voltage tail after the coil current was ramped down, making the coil not suitable for use in ULF-MR, which requires complete removal of magnetic field from $B_p$ coil within milliseconds.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.500-503
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.479-481
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• 2000

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.22-23
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• 2002

Titanium은 높은 강도, 낮은 밀도, 부식에 대한 저항 등, 타 금속에 비해 월등히 뛰어난 성질을 가지고 있기 때문에 산업 전반에 거쳐 그 응용이 크게 증가하고 있으며, 특히 고온에서의 응용이 중요성을 띠게 됨에 따라 고온으로의 상전이 관계에 따른 구조적 규명이 필요하다. 순수한 titanium은 상온에서 조밀충진 육방정계의 α-상구조(a=2.953Å, c=4.683 Å, P6₃/mmc)를 이루고 있으나, 대략 880℃ 이상에서는 β-상의 체심입방정계 (a=3.320Å, Im3m)로 상전이가 되는 것으로 알려져 있다. 이에 대한 대부분의 연구가 kinetics와 thermodynamics에 관련되어 있으며, TEM을 이용한 직접가열실험은 거의 전무한 상태이다. 본 실험에서는 TEM 직접가열을 통하여 titanium의 고온에서의 상전이와 가열시 발생할 수 있는 산화층 형성을 연구하였다. TEM 시편은 순도 99.94％의 titanium foil(Alfa Aesar, ＃00360, 0.025mm thick)를 이용하였고, 분석 장비로는 에너지여과 기능이 있는 TEM(EM912 Omega, Carl Zeiss)과 Gatan사의 double-tilt heating holder를 사용하였다. Titanium의 상전이를 관찰하기 위해 900℃ 까지 분당 10℃ 의 속도로 가열을 하였다. 통계적 분석 오차를 줄이기 위해 서로 다른 4군데의 관찰영역을 선택하여, 상온 - 600℃ - 900℃ - 상온의 단계별로 회절패턴을 관찰 및 기록하였고, 발생 가능한 산화에 대해서는 동일한 장비를 사용하여 EDS 분석을 하였다. 상온에서의 서로 다른 영역의 회절패턴들은 결함의 존재에 상관없이, 온도가 증가함에 따라 그 결함수가 증가하게 된다. 특히 600℃ 에서는 쌍정과 관련된 회절점들이 본래의 회절점 주위에 형성되어있지만, 각 면들의 격자상수의 변화는 나타나지 않았다. 그러나 900℃ 에서는 쌍정에 의한 회절점의 수가 증가하며, 회절점 사이에 발달한 뚜렷한 막대모양의 강도분포와 격자상수의 변화를 관찰할 수 있었다. 다시 상온으로 냉각시킨 후 관찰한 각각의 회절패턴에서는 격자 상수의 감소와 함께 900℃에 보여진 막대 모양의 강도분포와 쌍정에 의한 회절점들이 여전히 남아있었다. EDS분석 결과 가열 실험을 통해 시편이 열적 산화가 되어 있음을 확인 할 수 있었다. 순수한 titanium의 α-상에서 β-상으로의 상전이를 파악할 수 있는 격자상수의 변화자체는 매우 작은 값이기 때문에 상온과 900℃ 에서 기록된 전자회절패턴 상에서의 면간거리와 면간각도의 측정만으로는 상전이 여부를 명확히 구별할 수 없었다. 그러나, 결함에 의한 상변화가 900℃ 에서 심하게 관찰되어지는 것은 상전이와 관계가 있는 것으로 볼 수 있다. 고온에서 상온으로의 가역적 반응을 관찰할 수 없었던 이유는 열적산화로 생긴 산화층의 산소원자들이 고온의 상전이 과정 중에 Ti 원자와 반응이 일어나 TiO/sub X/ 구조로 전이되었기 때문으로 추정하고 있다.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.6-7
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• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.