• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 2006.05a
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• pp.214-218
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• 2006

In the current study, ohmic combined with brine immersion thawing increased thawing time than plate contact type ohmic thawing even at low voltage. Moreover, rapid thawing resulted in high WHC and improved meat tenderness. The result indicated if the problems in safety would be solved, brine immersion type ohmic thawing could reduce processing time in industrial application promising both improved meat qualities and successful application in meat industry, and further works were needed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1663-1668
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• 1988

Ohmic contact process for the fabrication of GaAs integrated circuits is very important. Specific contact resistivities, assuming Rsm=Rs, were measured after the rapid and the conventional alloying process, respectively. The results show that the characteristics of ohmic contact through the rapid alloying process is much better (Apc=1.3~3.3x10**-7 \ulcorner-(m\ulcorner. This is probably due to intensive and compound energy densities during the rapid alloying process. New analysis method of TLM patterns viz. measurements of normlaized specific contact resistivities are proposed to reduce measurement errors that could occur when measuring the small contact end resistances. The adoption of rapid alloying process for the mass production of GaAs integrated circuits could greatly reduce the total processig time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Advances in Energy Research
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• v.8 no.4
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• pp.253-264
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• 2022

This paper deals with the effects of design (active area, current density, membrane conductivity) and operating parameters (temperature, relative humidity) on the performance of hydrogen-fuelled proton exchange membrane (PEM) fuel cell. The design parameter of a PEM fuel cell with the active area of the single cell considered in this study is 25 cm² (5 × 5). The operating voltage and current density of the fuel cell were 0.7 V and 0.5 A/cm² respectively. The variations of activation voltage, ohmic voltage, and concentration voltage with respect to current density are analyzed in detail. The membrane conductivity with variable relative humidity is also analyzed. The results show that the maximum activation overpotential of the fuel cell was 0.4358 V at 0.21 A/cm² due to slow reaction kinetics. The calculated ohmic and concentrated overpotential in the fuel cell was 0.01395 V at 0.76 A/cm² and 0.027 V at 1.46 A/cm² respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.170-170
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.80-80
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• 1999

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.368-373
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• 2001

Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$ for 10 seconds. However, the specific contact resistivity decreased remarkably to $1.7\times10^{-6}\Omega\textrm{cm}^2$ and $2\times10^{-6}\Omega\textrm{cm}^2$ at $375^{\circ}C$/60sec and $425^{\circ}C$/10sec, respectively. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained even at $450^{\circ}C$, therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Applied Biological Chemistry
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• v.41 no.6
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• pp.431-436
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• 1998

The optimum ohmic heating condition of apple juice was investigated with model solution. The temperature rise of model solution was found to be $7.8,\;21.0,\;47.4^{\circ}C/min$ when the distances between electrodes were 29, 22, and 17mm, respectively. The heating rate increased proportionally with the numbers of electrode pairs, 1 to 3 and highly dependent on applied voltage. The heating rate was not affected by the frequencies ranged from 60 Hz to 60 KHz and the wave form of applied alternating electric current. The apple juices prepared by ohmic heating sterilization revealed similar physicochemical properties to that by commercial sterilization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.