• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.40-46
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• 2017

We reviewed the electrical properties of SOFC anode manufactured using spherical Ni and nano YSZ powder. When core-shell is fabricated by using submicron Ni as core and nano-sized YSZ as shell for SOFC anode, the electrical conductivity of the $0.2{\mu}m$ Ni-YSZ core-shell was 3 times higher than that of $1.0{\mu}m$ NiO or $1.0{\mu}m$ Ni-YSZ. Hydrogen selectivity was similar at $800^{\circ}C$, but hydrogen selectivity and methane conversion rate under $750^{\circ}C$ was 10~25% higher, Power density was more than 2 times, ASR was about 1/3, when exposed to $H_2$ atmosphere at $750^{\circ}C$ for a long time, Ni particles did not have any growth or cut off conduction path.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.13-16
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• 2008

Solid oxide fuel cell(SOFC) is an electrochemical energy conversion system with high efficiency and low-emission of pollution. In order to reduce the operating temperature of SOFC system under $800^{\circ}C$, the thickness reduction of YSZ electrolyte to be as thin as possible, e.g., less than 10 ${\mu}m$ are considered with the microstructure control and optimum design of unit cell. Methods for reducing the thickness of YSZ electrolyte have been investigated in coin cell. Moreover, a large unit cell($8cm{\times}8cm$) for SOFC was fabricated using an anode-supported electrolyte assembly with a thinner electrolyte layer, which was prepared by a tape casting method with a co-sintering technique. we studied the design factors such as active layer, electrolyte thickness, cathode composition, etc,. by the coin type of unit cell ahead of the fabrication process of a large unit cell and also reviewed about the evaluation technique of a large size unit cell such as interconnect design, sealing materials and current collector and so forth. Electrochemical evaluations of the unit cells, including measurements such as power density and impedance, were performed and analyzed. Maximum power density and polarization impedance of coin cell were 0.34W/$cm^2$ and $0.45{\Omega}cm^2$ at $800^{\circ}C$, respectively. However, Maxium power density of a large unit cell($5cm{\times}5cm$) decreased to 0.21W/$cm^2$ at $800^{\circ}C$ due to the increase of ohmic resistance. However, It was found that the potential value of a large unit cell loaded by 0.22A/$cm^2$ showed 0.76V at 100hrs without the degradation of unit cell.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.294_295
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• 2009

Superconducting fault current limiter (SFCL) is an power device of a novel concept. While SFCLs generate no ohmic loss during the operation carrying normal currents, they can limit fault currents very fast making large impedance by their quench characteristics. In 2006, KEPCO has developed a distribution class hybrid type SFCL by a collaborative research project with LS industrial systems. The SFCL has merits in practical and economical points of view. In the SFCL, the superconductor just plays a role of a fault detector and the current limiting is completed by the other current limiting element made of normal metals throu호 the line commutation. As a result, the required amounts of superconductors can be reduced considerably. Consequently, the hybrid SFCL can be fabricated with small size and cost, maintaining perfect current limiting performance. Currently, KEPCO is carrying out a research project at Gochang power test center for the purpose of the verification test of the 22.9 kV/ 630 A class SFCL for the practical application in real grid. Through the project, a long term operational test and fault current test will be done. In this paper, the back ground of development and installation of the SFCL will be explained and the operation plan of the SFCL for the verification test is also introduced.

• Journal of Physiology & Pathology in Korean Medicine
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• v.27 no.4
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• pp.367-373
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• 2013

The purpose of this study was to analyze the patent application trend in the processing technology for medicinal herbs. Recently, in processing technology for medicinal herbs, experimental researches have frequently been published through papers in journals. However, the research results about the patent area were fewer than the others. We tried to analyze the patent application trend in nonthermal processing technologies for medicinal herbs by country as Korea, Japan, U.S.A. and Europe. The detailed technologies consisted of pulsed electric field, oscillatory magnetic field, intense pulsed light, ultrasonification, high hydrostatic pressure, microwave, radiation, Ohmic heating, and supercritical extraction. As a result we found that patents of nonthermal processing technologies has been growing steadily in quantity from 1980s and growing quickly since 2000s. The number of patent in Korea is larger than others as making up 70% in that whole. The number of patent in ultrasonification field was larger than others in portfolio analysis. Patent application trend in nonthermal processing technologies for ingestion occupies high share compared to other usage applications. In conclusion, patent trends of nonthermal processing technologies for medicinal herbs belong to the period in the development.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.795-797
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• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.45-51
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• 2007

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.15-24
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• 2014

Recently, a variety of printing technologies, including ink jet, gravure, and roll-to-roll (R2R) printing, has generated intensive interest in the application of flexible and wearable electronic devices. However, the actual use of printing technique is much limited because the sintering process of the printed nanoparticle inks remains as a huge practical drawback. In the fabrication of the conductive metal film, a post-sintering process is required to achieve high conductivity of the printed film. The conventional thermal sintering takes considerable sintering times, and requires high temperatures. For application to flexible devices, the sintering temperature should be as low as possible to minimize the damage of polymer substrate. Several alternative sintering methods were suggested, such as laser, halogen lamp, infrared, plasma, ohmic, microwave, and etc. Eventually, the new sintering technique should be applicable to large area, R2R, and polymer substrate as well as low cost. This article reviews progress in recent technologies for several sintering methods. The advantages and disadvantages of each technology will be reviewed. Several issues for the application in R2R process are discussed.

• Journal of Environmental Science International
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• v.5 no.5
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• pp.593-603
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• 1996

A dual-porosity filmed agglomerate model for the porous cathode of the molten carbonate fuel has been investigated to predict the cell performance. A phenomenological treatment of molecular, kinetic and electrode parameters has been given. The major physical and chemical phenomena being modeled include mass transfer, ohmic losses and reaction kinetics at the electrode- electrolyte interface. The model predicts steady-state cell performance, given the above conditions that characterize the state of the electrode. Quasi-linearization and finite difference techniques are used to solve the coupled nonlinear differential equations. Also, the effective surface area of electrode pore was obtained by mercury porosimeter. The results of the investigation are presented in the form of plots of overpotential vs. current density with varied the electrode material, gas composition and mechanism. The predicted polarization curves are compared with the empirical data from 1 c$m^2$ cell. A fair correspondence is observed.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.710-714
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• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.