• Title/Summary/Keyword: Ohmic

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Identification of Electrical Resistance of Fresh State Concrete for Nondestructive Setting Process Monitoring

  • Shin, Sung Woo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.35 no.6
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    • pp.414-420
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    • 2015
  • Concrete undergoes significant phase changes from liquid to solid states as hydration progresses. These phase changes are known as the setting process. A liquid state concrete is electrically conductive because of the presence of water and ions. However, since the conductive elements in the liquid state of concrete are consumed to produce non-conductive hydration products, the electrical conductivity of hydrating concrete decreases during the setting process. Therefore, the electrical properties of hydrating concrete can be used to monitor the setting process of concrete. In this study, a parameter identification method to estimate electrical parameters such as ohmic resistance of concrete is proposed. The effectiveness of the proposed method for monitoring the setting process of concrete is experimentally validated.

Ohmic Metal Contact on Silicon Carbide Semiconductor (탄화규소 반도체의 오옴성 금속접촉)

  • 조남인
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.251-255
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    • 2003
  • 탄화규소 반도체에 대한 오옴성 금속 접촉 성질을 조사하기 위해 3종류의 금속 (Ni, Co, Cu)을 세척한 탄화규소 반도체 위에 직접 증착하여 전기적 성질을 조사 비교하였다. 이들 금속에 대한 오옴성 성질은 금속종류 뿐만 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2-step 방법으로 시행하였다. 접합비 저항은 TLM 구조를 만들었으며 면저항$(R_s)$, 접촉저항$(R_c)$, 이동거리$(L_T)$, 패드간거리(d), 저항$(R_T)$ 값을 구하면 접합비저항$(\rho_c)$ 값을 구하여 알려진 계산식에 의해 추정하였다. 가장 양호한 결과는 Cu 금속에 의한 접촉 결과이었으며 접합비저항$(\rho_c)$$1.2\times10^{-6}{\Omega}cm^2$의 낮은 값을 얻을 수 있었다. 열처리는 진공보다 환원분위기에서 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다.

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Fabrication and Characterization of GaAs/AlGaAs HEMT Device (GaAs/AlGaAs HEMT소자의 제작 및 특성)

  • 이진희;윤형섭;강석봉;오응기;이해권;이재진;최상수;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.114-120
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    • 1994
  • We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

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A study on Loss Evaluation Technology of High Efficiency Mold Transformers using Electromagnetic Field Simulation (전자계해석을 이용한 고효율 몰드변압기 손실 평가기술 연구)

  • Chung, Sang Hoon;Lee, Kon;Choi, Myung Jun
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.774-775
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    • 2015
  • In this paper, a series of electromagnetic analyses carried out for a high efficiency 22.9/0.38kV mold transformer are presented. The simulations were performed in order to calculate the losses which eventually verify the performance(efficiency) of the designed product. Here, losses include core loss, stray losses of non-current carrying metallic structural parts(core plate and clamp), ohmic loss and eddy current loss of current carrying metallic parts(busbars, leads, terminals and windings). The obtained results of the simulations were compared to the test results and showed high level of accuracy. The loss evaluation technology will allow designers avoid any potential over-design or under-design of the high efficiency products, reducing the manufacture cost and development period compared to the conventional experience-based design procedures.

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Measurement and Analysis of Open Circuit Potential in PEFC (고분자 전해질 연료전지의 개방회로 전위차 측정 및 분석)

  • 김홍건;김유신;김홍열
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.10a
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    • pp.134-138
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    • 2004
  • The discrepancies between theoretical values and measured data of PEFC(Proton Exchange Fuel Cell) is carried out for the machine tool power generation. Rudimental approach of theoretical fuel cell open circuit potential using Gibbs free energy is employed for the examination of PEFC module. The stack temperature, stack voltage and stack current are measured during the operation of PEFC module. It is found that stack voltage and current values show the pronounced discrepancy with the results calculated by Gibbs free energy approach. It is analysed that the discrepancy is due to activation polarization, concentration overvoltage and ohmic overvoltage.

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Schottky diode characteristics of a sol-gel driven ZnO (졸-겔 방법으로 제조한 ZnO 쇼트키 다이오드의 특성 연구)

  • Han, Kwang-Joon;Kang, Kwang-Sun;Kim, Jae-Hwan
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1733-1736
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    • 2008
  • ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

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Gate-modulated SWCNT/SnO2 nanowire hetero-junction arrays on flexible polyimide substrate

  • Park, Jae-Hyeon;Bae, Min-Yeong;Ha, Jeong-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.273-273
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    • 2010
  • Recently, extensive research on hetero-junction arrays has been reported owing to its unique band gaps dissimilar to that of homo-junctions. These hetero-junction devices can be used in laser, solar cells, and various sensors. We report on the facile method to fabricate SWCNTs/SnO2 nanowires hetero-junction arrays on flexible polyimide substrate. Each SWCNT field effect transistor (FET) and SnO2 nanowire FET exhibits the purely p- and n-type charactersistics with ohmic contact properties. Such formed pn-junctions showed rectification behaviors reproducibly with a rectification ratio of ${\sim}3{\times}103$ at 1 V and ideality factors about 12. The pn-junctions also showed a good gate modulation behavior.

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Shallow Emitter형 태양전지 적용을 위한 In2O3:Sn 박막층 가변에 따른 광학적, 구조적 특성 변화에 대한 연구

  • Bong, Seong-Jae;Kim, Seon-Bo;An, Si-Hyeon;Park, Hyeong-Sik;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.349-349
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    • 2014
  • ITO는 결정질 실리콘 태양전지의 anti-reflection coating (ARC) 층으로써 적합한 물질이다. ARC layer로써 구조적, 전기적 그리고 광학적 최적 조건의 특성을 얻기 위해는 높은 figure of merit(FOM)를 가져야 하고 결정방향 제어를 해야 한다. 본 연구에서는 결정질 실리콘 태양전지에 가장 적합한 ITO ARC layer의 특성 찾기 위해 Radio frequency magnetron sputter를 이용하여 공정 조건가변 실험을 진행 하였으며 높은 FOM을 갖는 ITO 반사방지막을 shallow emitter형 결정질 실리콘 태양전지에 적용하였으며 ITO 박막은 shallow emitter층과 완벽한 ohmic 접합을 이루었다. ITO ARC layer를 적용한 Shallow emitter형 태양전지는 81.59%의 fill factor와 $35.52mA/cm^2$의 단락전류를 보이며 17.27%의 광변환 효율을 보였다.

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Metal-assisted grown Si films and semiconducting nanowires for solar cells

  • Kim, Jun-Dong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.13-13
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    • 2010
  • The solar energy conversion will take 10 % global energy need by 2033. A thin film type solar cell has been considered as one of the promising candidates for a large area applicable solar cell fabrication at a low cost. The metal-assisted growth of microcrystalline Si (mc-Si) films has been reported for a quality Si film synthesis at a low temperature. It discusses the spontaneous growth of a Si film above a metal-layer for a thin film solar cell. Quite recently, a substantial demand of nanomaterials has been addressed for cost-effective solar cells. The nanostructure provides a large photoactive surface at a fixed volume, which is an advantage in the effective use of solar power. But the promising of nanostructure active solar cell has not been much fulfilled due mainly to the difficulty in architecture of nanostructures. We present here the Si nanowire (SiNW)-embedded Schottky solar cell. Multiple SiNWs were connected to two different metals to form a Schottky or an ohmic contact according to the metal work function values. It discusses the scheme of rectifying contact between metals and SiNWs and the SiNW-embedded Schottky solar cell performances.

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A Circuit Model of PEMFC for Design and Analyze Fuel Cell Power System (연료전지 전원 시스템의 설계 및 분석을 위한 PEMFC의 회로 모델)

  • Lee S.H.;Lee H.W.;Kwon S.K.
    • Proceedings of the KIPE Conference
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    • 2006.06a
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    • pp.197-199
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    • 2006
  • The Proton Exchange Membrane Fuel Cells (PEMFCs) are being used in a variety of applications including portable power generation, transportation and back-up power systems. In this paper presents a novel circuit model for a PEMFC that can be used to design and analyze fuel-cell power system. The Pspice-based model uses BJTs, L and C elements available in the Pspice library with some modification. The model includes the phenomena like activation polarization, ohmic polarization and mass transport effect present in a PEM fuel cell. Simulated characteristics of the fuel cell were compared with the experimental results obtained on a commercial fuel cell.

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