• Title/Summary/Keyword: Off-current

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Self-Tuning Control of SRM for Maximum Torque with Current and Shaft Position Feedback

  • Seo Jong-yun;Yang Hyong-yeol;Kim Kwang-Heon;Lim Young-Cheol;Cha Hyun-Rok;Jang Do-Hyun
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.351-354
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    • 2001
  • In this paper, we present self-tuning control of switched reluctance motor for maximum torque with phase current and shaft position sensor. Determination method of turn-on/off angle is realized by using self-tuning control method. During the sampling time, micro-controller checks the number of pulse from encoder and compare with the number of pre-checked pulse. After micro-controller calculates between two data, it moves forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, the turn-on angle automatically moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moved automatically to obtain the maximum torque. The experimental results are presented to validate the self-tuning algorithm.

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Static and Transient Simulation of High Power IGCT Devices (대용량 IGCT 소자의 정상상태 및 과도상태 특성 해석)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.213-216
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    • 2003
  • Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

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Output Voltage Control Method of Switched Reluctance Generator using the Turn-off Angle Control

  • Kim Young-Jo;Choi Jung-Soo;Kim Young-Seok
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.414-417
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    • 2001
  • SRG (Switched Reluctance Generator) have many advantages such as high efficiency, low cost, high-speed capability and robustness compared with characteristics of other machines. However, the control methods that have been adopted for SRGs are complicated. This paper proposes a simple control method using PID controller that only controls turn-off angles while keeping turn-on angles of SRG constant. The linear characteristics between the generated current and the turn-off angle can be used to control the turn-off angle for load variations. Since the reference current for generation can be produced from an error between the reference and the real voltage, it can be controlled to keep the output voltage constant. The proposed control method enhances the robustness of this system and simplifies the hardware and software by using only the voltage and speed sensors. The proposed method is verified by experimental results.

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Design of off-line UPS with AVR (AVR 기능 부가 off-line UPS 설계)

  • Lee, Seung-Hee;Park, Tae-Jun;Lee, Jin-Hee;Lee, Wang-Ha;Lee, Chi-Wan
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.605-607
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    • 2001
  • In this paper, an off-tine UPS with CVT(constant voltage transformer) is designed and the experimental result and problems of the designed UPS is given and discussed. This off-line UPS consists of triple-port CVT and PWM inverter which acts as charger and inverter. It can be evaluated in low price because haying simple structure. It offers high performance because CVT restricts the short current automatically about two or three times of rated current, has nearly unit power factor and constant output voltage to varying input voltage. The weak points of this UPS are that the output voltage waveform is not perfect sinusoidal and has phase difference to input voltage. The experimental result and problems of the designed UPS is given.

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A Study on Off-Gas Treatment of an Air Stripping Tower Using a Plasma Reactor

  • Lim, Gye-Gyu;Yoo, Ho-Sik
    • Journal of Korean Society for Atmospheric Environment
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    • v.9 no.E
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    • pp.382-389
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    • 1993
  • An evaluation of a plasma reactor was conducted to investigate its potential as a feasible and economical off-gas control technology for an air stripping tower (AST). The plasma reactor was powered by an alternating current with frequencies up to 1000Hz. The study showed that over 90% conversion of gas-phase trichloroethylene (TCE) can be achieved. An optimum frequency for the laternating current existed for maximum power input. The optimum frequency was dependent on the reactor geometry and the primary voltage applied. for a fixed geometry, a plasma reactor has a limited capacity for flow rate. Even though it is a feasible process to control off-gases, further investigations should be conducted to develop a more economic process.

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Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions (ZnO 박막트랜지스터의 어닐링 조건에 따른 전류 변화)

  • Yoo, Dukyean;Kim, Hyoungju;Kim, Junyeong;Jo, Jungyol
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.1
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    • pp.63-66
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    • 2014
  • ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.

A Study on High Efficiency Boost DC-DC Converter of Discontinuous Current Mode Control (전류불연속 제어의 고효율 부스트 DC-DC 컨버터에 관한 연구)

  • Kwak Dong-Kurl;Kim Choon-Sam
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.54 no.9
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    • pp.431-436
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    • 2005
  • This paper studies a novel boost DC-DC converter operated high efficiency for discontinuous current mode (DCM) control. The converter worked in DCM eliminates the complicated circuit control requirement, reduces a number of components, and reduces the used reactive components size. In the general DCM converter, the switching devices are turned-on the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve the zero voltage switching (ZVS) at the switching turn-off, the proposed converter is constructed by using a new loss-less snubber circuit. Soft-switched operation of the proposed boost converter is verified by digital simulation and experimental results. A new boost converter achieves the soft-switching for all switching devices without increasing their voltage and current stresses. The result is that the switching loss is very low and the efficiency of boost DC-DC converter is high.

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

  • Eun, Hye Rim;Woo, Sung Yun;Lee, Hwan Gi;Yoon, Young Jun;Seo, Jae Hwa;Lee, Jung-Hee;Kim, Jungjoon;Kang, In Man
    • Journal of Electrical Engineering and Technology
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    • v.9 no.5
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    • pp.1654-1659
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    • 2014
  • Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

Study on the Characteristics of GaInP/AlGaInP Heterojunction Photovoltaic Cells under Concentrated Illumination (집광 조건에서의 GaInP/AlGaInP 이종접합 구조 태양전지 특성 연구)

  • Kim, Junghwan
    • Applied Chemistry for Engineering
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    • v.30 no.4
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    • pp.504-508
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    • 2019
  • The feasibility of replacing the tope cell of pn GaInP homojunction with our GaInP/AlGaInP heterojunction structure in III-V semiconductor multijunction photovoltaic (MJPV) cells having the highest current conversion efficiency was investigated. The performance of photovoltaic (PV) cells grown on $2^{\circ}$ and $10^{\circ}$ off-oriented GaAs substrates were compared to each other. The PV cells on the $10^{\circ}$ off-cut substrate showed higher short-circuit current density ($J_{sc}$) and conversion efficiency values than that of using the $2^{\circ}$ one. For $2{\times}2mm^2$ area PV cell on $10^{\circ}$ off substrate, the $J_{sc}$ of $9.21mA/cm^2$ and the open-circuit voltage of 1.38 V were measured under 1 sun illumination. For $5{\times}5mm^2$ cell on $10^{\circ}$ off substrate, the conversion efficiency was decreased from 6.03% (1 sun) to 5.28% (20 sun) due to a decrease in fiill factor (FF).

Online Turn-Off Angle Contro1 for Performance Optimization of the Switched Reluctance Motor (온라인 턴 오프각제어를 통한 SRM의 성능최적화)

  • Jeong, Byeong-Ho;Choi, Youn-Ok;Lee, Kang-Yeon;Cho, Geum-Bae;Chung, Soo-Bok
    • The Transactions of the Korean Institute of Power Electronics
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    • v.12 no.1
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    • pp.98-106
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    • 2007
  • This paper represent improved on-line turn off angle control schemes for switched reluctance motors based on current control. For the purpose of finding the optimal commutation switching angle point with improved controller, it is utilized turn on and turn off position calculation with inductance vs. current vs. not linkage analysis method. The goal of proposed paper is the maximization of the energy conversion per stroke and torque ripple reduction and obtaining approximately flat-topped current waveform. The proposed control scheme is demonstrated simulation and on a prototype experimental system.