• 대한임베디드공학회논문지
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• 제12권2호
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• pp.79-88
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• 2017

One of the important applications of activity sensing in the home is energy monitoring. Many previous methodologies for detecting and recognizing household appliances have been proposed. This paper presents an approach that uses an energy metering circuit (EMC) to classify and identify the various electrical devices in home based on root-mean-square (RMS) consumed current value. EMC gathers the RMS current values created by appliance state transition (e.g., on to off) and apparatus operating process. In this paper, an identification algorithm is proposed to detect a change in current levels using the standard deviation of current signals and their average values. In addition, characteristic of the appliance is extracted concerning four feature parameters concerning the number of current levels, the minimum level, the maximum level, and signal-to-noise ratio (SNR) of them. Experiment results validate the reliable performance of the proposed identification method for 11 representative appliances.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.112-115
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• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

• Journal of Power Electronics
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• 제1권2호
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• pp.71-77
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• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of DC to DC PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of DC to DB PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype converter operating at 40 kHz.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1250-1252
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• 1993

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.305-308
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• 1997

The on-line calculation method is developed to obtain the temperature trajectory that brings the reactants to the desired state in batch styrene polymerization reactor. The temperature trajectory is obtained by applying the moments of the polymer concentration to the 2-step calculation method. The computer simulation is also carried out to verify the superiority of the on-line method to the off-line one. When a temperature disturbance of constant size is introduced, the off-line results shows considerable deviation from the target degree of polymerization. The on-line strategy set up a new trajectory to reach the desired state by using the current state of the reactor. Therefore, the on-line strategy deals with the changes of the system more adequately than the off-line strategy.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1840-1843
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• 1997

The task environment of a robot is changing rapidly and task itself becomes complicated due to current industrial trends of multi-product and small lot size production. A convenient user-interfaced off-line programming(OLP) system is being developed in order to overcome the difficulty in teaching a robot task. Using the OLP system, operators can easily teach robot tasks off-line and verify feasibility of the task through simulation of a robot prior to the on-line execution. However, some task errors are inevitable by kinematic differences between the robot model in OLP and the actual robot. Three calibration methods using image information are proposed to compensate the kinematic differences. These methods compose of a relative position vector method, three point compensation method, and base line compensation method. To compensate a kinematic differences the vision system with one monochrome camera is used in the calibration experiment.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.39-42
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• 1996

This paper proposes a novel Auxiliary Resonant Commutated Pole Inverter (ARCPI) topology. The conventional ARCPIs make the hard switching at turn-off likewise the conventional PWM inverters. Therefore, turn-off switching losses may be so serious and can be so much considerable in high power level. The proposed ARCPI can solve this problem with high frequency transformers, switches, and capacitors. All the switches in the expanded auxiliary circuit achieves the soft switching and operates only during the commutating intervals. The characteristics and the analysis for each operation mode are described in detail and the validity is verified by the simulations and the experimental results.