• Journal of Power Electronics
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• v.18 no.3
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.3
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• pp.206-211
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• 2004

In phase controlled rectifier, it's been known that a fast response is achieved by predictive current control without any overshoot. The frequent sampling period is essential to improve the firing accuracy in conventional predict current control. However, improving the firing accuracy if difficult to reduce the period of sampling efficiently because current sampling and predictive current control is carried out in every period and the ON-OFF current control is performed by comparing two different one. To improve the firing accuracy at the predictive current control, the calculated firing angle is loaded into the high-accuracy hardware timer. So the calculation of exact crossing point between the predictive and actual current is the most important. In this paper, the flow chart for proposed firing angle calculation algorithm is obtained for the fastest current control performance in transient state. The performance of proposed algorithm is verified through simulations and experiments.

• Proceedings of the KSR Conference
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• 2004.10a
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• pp.1390-1395
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• 2004

Recently, the load increasement and new regenerative systems of electrified railway system make it a difficult to distinguish between the load current and fault current. The failure of traction system perhaps causes over-current to flow. The high current can collapse other railway systems. If failures of the traction system takes place, the failures are detected and protected lest it should provoke high current flow. The over current from such a traction system failure permit to charge high tension voltage and produces high temperature arc, voltage instability, current cutting, and break down railway systems. The traction system failures detect and the system has to immediately cut off from over-current flow. To isolate the failure, the system can distinguish failure current from current flows. It forces us to adapt such as a new intelligent protection system. The protective system in traction system play a role of detecting and isolating failure points. In this paper, we proposed intelligent algorithm for discriminating normal and abnormal situation instead of the system being operated abnormally.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.234-237
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• 2000

In this paper, a method to implement new Quasi-SOI LDMOSFET is introduced and the electrical characteristics of the device are studied. Key process steps of the device are explained briefly. By performing process and device simulations, electrical characteristics of the device are investigated, with emphasis on the optimization of the tilt angle of p$\^$0/ channel region. The electrical properties of the Quasi-SOI device are compared with those of bulk and SOI devices with the same process parameters. Simulated device characteristics are threshold voltage, off-state leakage current, subthreshold swing, DIBL, output resistance, lattice temperature, I$\_$D/-V$\_$Ds/, and cut-off frequency.

• 전기의세계
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• v.17 no.2
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• pp.6-10
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• 1968

The conversive limitation of electric energy for the thyristor inverter is analysed under the boundary conditions which the term of a negative inverse voltage is longer than that of the turn off time of the thyristor under commutation. It is clear that the maximum electric energy conversion is affected by the turn off time of the thyristor, the reactance of a commutation reactor, the capacity of a commutation condenser and the voltage of Direct current source. It is useful for design the thyrister invertor and the motor speed control to apply the above conclusion.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.137-140
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• 2000

This paper proposes an improved soft switching two-transistor forward converter which uses a novel lossless snubber circuit to effectively control the turn-off dv/dt rate of the main transistors. In the proposed soft switching implementation the turn-off voltage traces across the main two transistors are almost the same contributing to reduce the total capacitive turn-on loss and the snubber current is divided into the two transistors resulting in distributed thermal stresses

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.241-245
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• 1998

This paper gives the novel design of compensated ring anode-short for power GTO thyristor. By means of this design the power GTO of $\Phi$63.5mm 2500A/4500V reaches more uniform turn-off compared with conventional ring short GTO, resulting in higher turn-off ability and low tail current/tail time.