• Title/Summary/Keyword: OP18

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On-Chip Full CMOS Current and Voltage References for High-Speed Mixed-Mode Circuits (고속 혼성모드 집적회로를 위한 온-칩 CMOS 전류 및 전압 레퍼런스 회로)

  • Cho, Young-Jae;Bae, Hyun-Hee;Jee, Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.3
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    • pp.135-144
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    • 2003
  • This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

A Study on Performance Improvement of Detecting Current of the Norton Amplifier (노튼 증폭기의 전류검출성능 개선에 관한 연구)

  • Kwon, Sung-Yeol;Lee, Hyun-Chang;Lee, Kyu-Tae
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.3
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    • pp.185-191
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    • 2018
  • In this paper, an improved Norton amplifier is proposed and the problems caused by the current input in the Norton amplifier, which has advantages in current transmission, are analyzed. The output of the voltage follower consisting of an operational-amplifier with constant output voltage characteristics is used as an input terminal of the proposed circuit. It is configured to detect the power supply current passing through the voltage follower and extract the current from the input terminal. The performance of the improved Norton amplifier is verified at experiment according to the input current. The results are compared with conventional Norton amplifier. Consequently, the input offset voltage, which is a problem in the conventional Norton amplifier, was removed in the proposed circuit. In addition, the average error of the output voltage with respect to the input current was reduced to 4.755%. It is verified that the characteristics of the proposed circuit are improved.

HPLC Analysis of Caffeoylquinic Acids in the Extract of Cacalia firma and Peroxynitrite Scavenging Effect (병풍쌈 추출물의 Caffeoylquinic Acid 성분 분석과 Peroxynitrite 소거효과)

  • Park, Hee-Juhn;Nugroho, Agung;Lee, Jin-Ha;Kim, Jong-Dae;Kim, Won-Bae;Lee, Kang-Ro;Choi, Jae-Sue
    • Korean Journal of Pharmacognosy
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    • v.40 no.4
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    • pp.365-369
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    • 2009
  • Six caffeoylquinic acids of Cacalia firma (Komarov) Nakai (Compositae) leaves were identified using standard compounds by HPLC. Each content of those compounds in dried weight was determined as follows: 3,4-di-O-caffeoylquinic acid (1.44${\pm}$0.04 mg/g of dried weight), 3,5-di-O-caffeoyl-muce-quinic acid (2.47${\pm}$0.12 mg/g), 3,5-di-O-caffeoylquinic acid (3.74${\pm}$0.24 mg/g), 5-caffeoylquinic acid (chlorogenic acid, 5.20${\pm}$0.09 mg/g), 3-caffeoylquinic acid (1.35${\pm}$0.01 mg/g) and 3-Op-coumaroylquinic acid (3.84${\pm}$0.25 mg/g). The total content of six caffeoylquinic acids in the plant material was calculated as 18.05${\pm}$0.69 mg/g while the percentage of the six compounds in the MeOH extract was calculated as 30.85${\pm}$1.18%. The $IC_{50}$ value of the MeOH extract scavenging peroxynitrite ($ONOO^-$) was shown as 3.22${\pm}$0.57 ${\mu}g$/ml.

Low-area Dual mode DC-DC Buck Converter with IC Protection Circuit (IC 보호회로를 갖는 저면적 Dual mode DC-DC Buck Converter)

  • Lee, Joo-Young
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.586-592
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    • 2014
  • In this paper, high efficiency power management IC(PMIC) with DT-CMOS(Dynamic threshold voltage Complementary MOSFET) switching device is presented. PMIC is controlled PWM control method in order to have high power efficiency at high current level. The DT-CMOS switch with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuit consist of a saw-tooth generator, a band-gap reference(BGR) circuit, an error amplifier, comparator circuit, compensation circuit, and control block. The saw-tooth generator is made to have 1.2MHz oscillation frequency and full range of output swing from supply voltage(3.3V) to ground. The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on current mode PWM control circuits and low on-resistance switching device, achieved the high efficiency nearly 96% at 100mA output current. And Buck converter is designed along LDO in standby mode which fewer than 1mA for high efficiency. Also, this paper proposes two protection circuit in order to ensure the reliability.

A Study on the Offset cancellation circuit using by using dual capacitor (Dual 커패시터를 이용한 Opamp 옵셋 저감 회로에 관한 연구)

  • Kim, Hanseul;Kang, Byung-jun;Lee, Min-woo;Son, Sang-Hee;Jung, Won-sup
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.848-851
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    • 2012
  • In this paper, circuit of reducing the offset voltage in Op-amp, effectively, is newly proposed by using dual capacitor. Capacitors and MOS switches are added in proposed circuit to make up for the weak points of previous circuits ofr reducing the offset voltage in auto-zeroing method. Also, it is designed to reduce the offset voltage in high frequency range by using chopping method, effectively. Circuit simulation and layout are executed by TSMC 1.8V, 0.18um process. From the simulation results, it is verified that magnitude of offset voltage is under 5mV and proposed circuit is good for compensation of offset voltage better than previous auto-zeroing method.

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A Design of Single Pixel Photon Counter for Digital X-ray Image Sensor (X-ray 이미지 센서용 싱글 픽셀 포톤 카운터 설계)

  • Baek, Seung-Myun;Kim, Tae-Ho;Kang, Hyung-Geun;Jeon, Sung-Chae;Jin, Seung-Oh;Huh, Young;Ha, Pan-Bong;Park, Mu-Hun;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.2
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    • pp.322-329
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    • 2007
  • A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model (등가회로 모델에 의한 레이저다이오드의 누설전류 해석)

  • Choi, Young-Kyu;Kim, Ki-Rae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.2
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    • pp.330-336
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    • 2007
  • A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

Development of New Stacked Element Piezoelectric Polyvinylidene Fluoride Pressure Sensor for Simultaneous Heartbeat and Respiration Measurements (PVDF 압전소자를 이용한 심장박동 및 호흡수 동시측정센서개발)

  • Park, Chang-Yong;Kweon, Hyun-Kyu;Lee, So-Jin;Manh, Long-Nguyen
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.4
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    • pp.100-108
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    • 2019
  • In this paper, a new stacked element pressure sensor has proposed for heartbeat and respiration measurement. This device can be directly attached to an individual's chest; heartbeat and respiration are detected by the pulsatile vibration and deformation of the chest. A key feature of the device is the simultaneous measurement of heart rate and respiration. The structure of the sensor consists of two stacked elements, in which one element includes one polyvinylidene fluoride (PVDF) thin film bonded on polydimethylsiloxane (PDMS) substrate. In addition, for the measurement and signal processing, the electric circuit and the filter are simply constructed with an OP-amp, resistance, and a capacitor. One element (element1, PDMS) maximizes the respiration signal; the other (element2, PVDF) is used to measure heartbeat. Element1 and element2 had sensitivity of 0.163V/N and 0.209V/N, respectively, and element2 showed improved characteristics compared with element1 in response to force. Thus, element1 and element2 were optimized for measuring respiration heart rate, respectively. Through mechanical and vivo human tests, this sensor shows the great potential to optimize the signals of heartbeat and respiration compared with commercial devices. Moreover, the proposed sensor is flexible, light weight, and low cost. All of these characteristics illustrate an effective piezoelectric pressure sensor for heartbeat and respiration measurements.

Compare the Intracranial Pressure Trend after the Decompressive Craniectomy between Massive Intracerebral Hemorrhagic and Major Ischemic Stroke Patients

  • Huh, Joon;Yang, Seo-Yeon;Huh, Han-Yong;Ahn, Jae-Kun;Cho, Kwang-Wook;Kim, Young-Woo;Kim, Sung-Lim;Kim, Jong-Tae;Yoo, Do-Sung;Park, Hae-Kwan;Ji, Cheol
    • Journal of Korean Neurosurgical Society
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    • v.61 no.1
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    • pp.42-50
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    • 2018
  • Objective : Massive intracerebral hemorrhage (ICH) and major infarction (MI) are devastating cerebral vascular diseases. Decompression craniectomy (DC) is a common treatment approach for these diseases and acceptable clinical results have been reported. Author experienced the postoperative intracranaial pressure (ICP) trend is somewhat different between the ICH and MI patients. In this study, we compare the ICP trend following DC and evaluate the clinical significance. Methods : One hundred forty-three patients who underwent DC following massive ICH (81 cases) or MI (62 cases) were analyzed retrospectively. The mean age was $56.3{\pm}14.3$ (median=57, male : female=89 : 54). DC was applied using consistent criteria in both diseases patients; Glasgow coma scale (GCS) score less than 8 and a midline shift more than 6 mm on brain computed tomography. In all patients, ventricular puncture was done before the DC and ICP trends were monitored during and after the surgery. Outcome comparisons included the ictus to operation time (OP-time), postoperative ICP trend, favorable outcomes and mortality. Results : Initial GCS (p=0.364) and initial ventricular ICP (p=0.783) were similar among the ICH and MI patients. The postoperative ICP of ICH patients were drop rapidly and maintained within physiological range if greater than 80% of the hematoma was removed. While in MI patients, the postoperative ICP were not drop rapidly and maintained above the physiologic range (MI=18.8 vs. ICH=13.6 mmHg, p=0.000). The OP-times were faster in ICH patients (ICH=7.3 vs. MI=40.9 hours, p=0.000) and the mortality rate was higher in MI patients (MI=37.1% vs. ICH=17.3%, p=0.007). Conclusion : The results of this study suggest that if greater than 80% of the hematoma was removed in ICH patients, the postoperative ICP rarely over the physiologic range. But in MI patients, the postoperative ICP was above the physiologic range for several days after the DC. Authors propose that DC is no need for the massive ICH patient if a significant portion of their hematoma is removed. But DC might be essential to improve the MI patients' outcome and timely treatment decision.

Optical properties of hydrogenated amorphous chalcogenide thin films (수소화 처리된 비정질 칼코게나이드 박막의 광학적 특성)

  • Nam, Gi-Yeon;Kim, Jun-Hyung;Cho, Sung-Jun;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.493-496
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    • 2005
  • 비정질 실리콘 (a-Si)의 수소화를 통해 활성화 수소가 비정질 실리콘내의 댕글링본드 (dangling bond) 와 결합 하므로 에너지밴드의 국재준위(localized state)를 감소시켜 불순물 도핑이 가능하게 되므로 a-Si 이 전자소자로서 이용 가능하게 되었다. 이에 착안하여 본 연구에서는 경사($0^{\circ}$, $45^{\circ}$, $80^{\circ}$) 증착을 통해 비정질 칼코게나이드($a-As_{40}Ge_{10}Se_{15}S_{35}$) 박막을 제작하고 그 박막을 수소화처리 (15~20atm at $150\sim190^{\circ}C$)하여 처리 전 후의 surface morphology 변화 및 광학적 특성 변화를 고찰하였다. $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 SEM 측정을 통해 $40^{\circ}$$80^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 각각 18.8nm 와 160nm의 transition layer와 박막의 기둥(columnar)구조가 형성됨을 관찰하였다. 특히, $80^{\circ}$ 증착박막의 경우 수소처리전 columnar구조는 약 $65\sim70^{\circ}$의 기둥 각을 가지고 형성되었고 수소화 처리를 통해 기둥구조가 붕괴 되었다. $70^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막은 $0^{\circ}$에 따른 박막 보다 흡수단 부근에서 약 20%의 투과도 증가와 광 에너지 갭 ($E_{op}$)의 증가를 관찰 할 수 있었다. $80^{\circ}$경사 증착된 수소처리 박막에서 흡수단 부근의 투과도가 약 10%증가 되었고, 광 에너지 갭은 약 0.07eV 증가 하였고, PL intensity는 흡수단 부근에서 증가한 것을 확인 할 수 있었다. 이러한 변화들은 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막 내의 상대적으로 원자 밀도가 큰 기둥(columnar)구조가 생성되고, 이 원자 밀도가 높은 기둥구조의 댕글링본드와 주입된 수소가 흡착하여 에너지대의 국재준위를 감소시키기 때문으로 판단된다.

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