• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.1-10
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• 2002

We have done various treatments of indium tin oxide (ITO) surface for organic light-emitting diodes (OLEDs), and investigated the surface states by different surface treatments using atomic force microscopy (AFM) and Auger electron spectroscopy (AES). We have fabricated OLEDs deposited by ultra-high vacuum molecular beam deposition system and studied the characteristics of the OLEDs. We have observed the dramatical improvement of the performance of OLEDs fabricated on ITO substrates treated by $O_2$ plasma treatment reduces the carbon comtamination of ITO surfaces and increases the work function of ITO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.413-413
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• 2007

In recent years, flexible display devices such as liquid crystal display (LCD), organic light emitting diode (OLED), etc. have attracted considerable interest in a wide variety of applications. Polymer substrate is absolutely necessary to realize this kind of flexible display devices. Using the polymer as a substrate, there are lots of advantages including not only mechanical flexibility such as rolling and bending characteristics but also light weights, low cost and so on. In detail, thickness and weights is only one forth and one second of glass substrate, respectively. However, it needs low temperature below $150^{\circ}C$ in the fabrication process comparing to conventional deposition process. The polymer substrate is not thermally stable as much as the glass substrate so that some deformation can be occurred according to variation of temperature. In particular, performance of devices can be easily deteriorated by shrinkage of substrate when heating it. In this paper, pre-annealing and deposition of buffer layer was introduced and studied to solve previously mentioned problems of the shrinkage and followed shear stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.207-207
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• 2009

In this work, we report the physical properties of amorphous $Al_2O_3$ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-aluminium (TMA) as the Al precursor at low temperatures. The thin films were deposited on Si substrates. The composition and the bonding structure of the amorphous $Al_2O_3$ films were studied using Fourier transform infrared spectroscopy (FT-IR), Ellipsometer and UV-visible Spectrophotometer and MOCON.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.12
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• pp.47-56
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• 2010

For a human being's smooth activity, the clean air and comfortable lighting environment are needed. The suitable lighting environment is obtained generally by making it available for being formed the bright situation easy for seeing object and the visually comfortable atmosphere. In this way, even the lighting environment was changed along with economic development. Even a light source was diversified. Thus, several kinds of new light sources such as LED, OLED, PLS, and CNT came to appear. Halogen lamp, which has low efficiency due to high color rendering among lamps of being used now, is being much used yet. However, owing to radiation of UV and IR, there are many limitations to the subject in general exhibition lighting, museum, and art museum. Accordingly, a research was performed on filter that is blocked UV and IR at the same time, by using halogen lamp that is excellent in color rendering and in life.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.7-9
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• 2008

ITO thin film is generally fabricated by various. methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.179-182
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• 2005

Indium Tin Oxide (ITO) thin films were deposited from various target densities ($98.7\%\~99.6\%$) using RF magnetron sputtering. Effect of the sputtering target densities on the structural, electrical and optical properties of deposited ITO thin films was investigated. The preferable (400) crystalline orientation peak was observed on the films deposited from > $99.0\%$ target density. Higher target density produced films with higher roughness but lower resistivity. All of the deposited films showed optical transmittance more than $85\%$ in the visible wavelength region. It is necessary to use the highest target density for sputtering deposition of ITO thin films.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.348-348
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• 2009

The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.409-410
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• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.