• 제목/요약/키워드: OLED (organic light-emitting device)

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Electroluminescence Properties of Simple Anthracene Derivatives Containing Phenyl or Naphthyl Group at 9,10-position for the Blue OLED

  • Kim, Si Hyun;Lee, Song Eun;Kim, Yong Kwan;Lee, Seung Hee
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.3
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    • pp.562-567
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    • 2017
  • The organic light-emitting diodes are fabricated with six anthracene derivatives containing simple substituents such as phenyl or naphthyl group. The device structure is as in the following: Indium tin oxide (ITO) (180 nm)/4,4-4,4',4"-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (2-TNATA) (30 nm)/4,4'-bis[N-(1-naphthyl)-N-phenyl-1-amino] biphenyl (NPB) (20 nm)/Emitting compound (30 nm)/2,2',2"-(1,3,5-Benzinetriyl)-tris (1-phenyl-1-H-benz-imidazole) TPBi (40 nm)/lithium quinolate (Liq) (2 nm)/Al (100 nm). In the emitting layer the anthracene derivatives are used without any dopant. All the six devices show blue emissions. Among the tested diodes, the one with 9-(2-naphthyl)-10-(p-tolyl) anthracene (2-NTA) exhibited luminous efficiency, power and external quantum efficiencies of 3.26 cd/A, 0.98 lm/A, 2.8 % at $20mA/cm^2$.

Physical Characteristics of PECVD SiON thin film for OLED passivation (OLED passivation에 적응하기 위한 PECVD SiON 박막의 물리적 특성)

  • Yoon, Jae-Kyoung;Kwon, Oh-Kwan;Yoon, Won-Min;Shin, Hoon-Kyu;Phak, Chan-Eon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.292-292
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    • 2009
  • OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD를 이용하여 SiON 박막을 증착시킬 때 RF Power, 공정압력, Distance의 변화에 따른 박막의 결정화도, 수분투습도, 광투과도 등의 특성을 FT-IR(Fourier Transform Infrared Spectroscopy), Ellipsometer, UV-visible Spectrophotometer, MOCON를 이용하여 SiON 박막의 특성을 고찰하였다.

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Study on the characteristics of inorganic thin film for OLED passovation (OLED passivation에 적용하기 위한 무기박막의 특성에 관한 연구)

  • Yoon, Jae-Kyoung;Kwon, Oh-Kwan;Yoon, Won-Min;Shin, Hoon-Kyu;Park, Chan-Eon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.176-176
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    • 2010
  • OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$조건에서 24hr 측정하였다.

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Blue organic light emitting diodes with carbazole based small molecules and color tunning by controlled side group

  • Kim, Y.B.;Ahn, Y.J.;Park, J.H.;Khang, M.W.;Woo, H.S.;Park, J.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.514-516
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    • 2003
  • We have fabricated an air stable blue emitting organic electroluminescent devices (OLEDs) with a carbazole based emitting molecule, Bis(3-N-ethylcarbazolyl)terephthalidene (BECP). Our device emits strong blue at 472 nm with the luminance efficiency of near 1 lm/W at a voltage and current density of 8 V and 5.7 mA/cm2, respectively, reaching the brightness up to 5000 cd/m2 at 270 mA/cm2. Finally, in order to tune the emission color from blue to green, we have used Bis(3-N-ethylcarbazolyl)cynoterephthalidene (BECCP), a derivative of BECP by adding cyno group in side chain, and compared the electroluminscence (EL) of OLEDS prepared by BECCP to that of BECP based OLEDs.

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Electroluminescent Properties of White Light-Emitting Device Using Photoconductive Polymer and Anthracene Derivatives (광전도성 고분자와 안트라센 유도체를 이용한 백색 전계발광소자의 발광 특성)

  • Lee Jeong-Hwan;Choi Hee-Lack;Lee Bong
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.543-547
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    • 2005
  • Organic electroluminescence devices were made from 1,4-bis-(9-anthrylvinyl)benzene (AVB) and 1,4-bis-(9-aminoanthryl)benzene (AAB) anthracene derivatives. Device structure was ITO/AVB/PANI(EB)/Al (multi-layer device) and ITO/AAB:DCM/Al(single-layer device). In these devices, AVB, polyaniline(emeraldine base) (PANI(EB)) and AAB were used as the emitting material. 4-(dicyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H -pyran(DCM) was used as red fluorescent dopant. We studied change of fluorescence wavelength with concentration of DCM doped in AAB. The ionization potential (IP) and optical band gap (Eg) were measured by cyclic voltammetry and UV-visible spectrum. We compared with difference of emitting wavelength between photoluminescence and electroluminescence spectrum. In case of the multi-layer device, PANI and AVB EL spectra have similar wave pattern to each PL spectrum and when PAM and AVB were used at the same time, and multi-layer device showed that a balanced recombination and radiation kom PANI and AVB. In case of the single-layer device, with the increase of DCM concentration, the blue emission decreases and red emission increases. This indicates that DCM was excited by the energy transfer from AAB to DCM or the direct recombination at the dopant sites due to carrier trapping, or both. The device with $1.0wt\%$ DCM concentration gave white light.

Laser Microfabrications for Next-Generation Flat Panel Display (레이저를 이용한 차세대 평판 디스플레이 공정)

  • Kim, Kwang-Ryul
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.352-357
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    • 2007
  • Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

The Effect of Plasma Treatment on the OLED Characteristics (플라즈마 처리가 유기발광다이오드의 특성에 미치는 영향)

  • Shin, Se-Jin;Ahn, Jong-Myung;Kim, Min-Young;Jang, Ji-Geun
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.1 s.18
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    • pp.23-26
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    • 2007
  • The effects of plasma treatment on the ITO/glass substrate before deposition of organic materials were investigated in the fabrication of green light emitting organic devices with $Alq_3-C545T$ fluorescent system. In our experiments, the optimum plasma treatment was obtained at the power and time of 150W and 2 minutes under the $Ar(50%)/O_2$ ambient of 1 mTorr. The green OLED with plasma treatment at 150W for 2 minutes showed the luminance and efficiency of $4700\;cd/m^2$ and 8 lm/W at 10V, respectively. On the contrary, the same structured device without plasma treatment showed much lower performance with the luminance of $2600\;cd/m^2$ and the efficiency of 3.6 lm/W at 10 V.

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Improving current and luminous efficacy of red phosphorescent Organic Light Emitting Diodes (OLEDs) by introducing graded-layer device designs enabled by Organic Vapor Phase Deposition (OVPD)

  • Schwambera, Markus;Keiper, Dietmar;Meyer, Nico;Heuken, Michael;Lindla, Florian;Bosing, Manuel;Zimmermann, Christoph;Jessen, Frank;Kalisch, Holger;Jansen, Rolf H.;Gemmern, Philipp Van;Bertram, Dietrich
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1140-1143
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    • 2009
  • Organic Vapor Phase Deposition (OVPD) equipment enables the accurate and simultaneous control of deposition rates of multiple materials as well as their homogenous mixing in the gas phase. Graded or even cross-faded layers by varying carrier gas flow are options to improve OLED performances. As example, we will show how the efficacies of standard red phosphorescent OLEDs with sharp interfaces can be increased from 18.8 cd/A and 14.1 lm/W (1,000 cd/$m^2$) to 36.5 cd/A (+94 %, 18 % EQE) and 33.7 lm/W (+139 %) by the introduction of cross-fading, which is a controlled composition variation in the organic film.

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Effect on Efficiency of the OLED depending on Thickness Variation of EIL $Cs_2CO_3$ (전자 주입층 $Cs_2CO_3$ 두께 변화에 따른 OLED의 효율에 미치는 영향)

  • Han, Hyeon-Seok;Kim, Chang-Hoon;Kang, Yong-Gil;Kim, Gwi-Yeol;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1438-1439
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    • 2011
  • In this paper, we studied effects on the efficiency, according to thickness of the electron injection layer(EIL) for improving efficiency of Organic Light Emitting Diodes(OLEDs). For the first time, after confirming the optimum thickness of the EIL material $Cs_2CO_3$, we designed OLED devices having a structure of ITO/TPD/$Alq_3/Cs_2CO_3$/Al. And we manufactured devices applying for the optimum thickness of the material in the simulation with thermal evaporating method. And we investigated how the EIL material $Cs_2CO_3$ effects on efficiency of OLEDs in the EIL. As the result, because the EIL material $Cs_2CO_3$ reduces energy potential barrier of the EIL, it facilitated the electron transfer. And, as blocking the hole transfer contributes to an increased recombination, we confirmed that the efficiency of OLEDs increased. And compared to the device without using the EIL material, the device using thickness 1.0 nm of $Cs_2CO_3$ in the EIL shows the excellent efficiency. Therefore, we confirmed that the luminance and the external quantum efficiency increase about 600% and 500% respectively.

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The Study on Characteristics of Green Organic Light Emitting Device with Transparency Conductive Oxide Electrodes (투명전도성 산화물 전극에 따른 Green OLED의 특성연구)

  • Ki, Hyun-Chul;Kim, Seon-Hoon;Kim, Hwe-Jong;Kim, Sang-Gi;Choi, Young-Sung;Hong, Kyung-Jin
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.615-618
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    • 2009
  • In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].