• 마이크로전자및패키징학회지
• /
• 제23권1호
• /
• pp.17-22
• /
• 2016

플렉서블 OLED는 매우 다양한 유기(organic) 및 무기 물질로 이루어져 있으며, 각 층을 증착하는 과정에 의하여 고온에 의한 휨(warpage)이 발생한다. 휨으로 인하여 발생한 굽힘 변형은 후속 공정에 많은 영향을 미치며, 궁극적으로 생산 수율 및 신뢰성을 저하시킨다. 본 연구에서는 플렉서블 OLED 소자의 고온 환경신뢰성 시험 및 공정 단계에서 발생하는 휨 변형을 수치해석을 이용하여 예측하였으며 실험 결과와 비교하였다. 이를 통하여 휨에 가장 큰 영향을 미치는 재료를 파악하고, 궁극적으로 휨을 최소화 함으로써 플렉서블 OLED의 신뢰성을 향상시키고자 하였다. 휨의 측정 및 수치해석 결과, 편광 필름과 베리어 필름이 휨에 많은 영향을 줌을 알 수 있었으며, OCA가 휨에 미치는 영향은 미미하였다. 플렉서블 OLED의 휨에 가장 큰 영향을 주는 소재는 plastic cover이였으며, 휨을 최소화하기 위한 plastic cover 소재의 최적 물성을 실험계획법으로 계산한 결과, 탄성 계수는 4.2 GPa, 열팽창계수는 $20ppm/^{\circ}C$ 일 경우 플렉서블 OLED의 휨은 1 mm 이하가 됨을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제24권8호
• /
• pp.664-668
• /
• 2011

In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.

• Journal of Information Display
• /
• 제13권4호
• /
• pp.139-143
• /
• 2012

In this study, optical simulation was used to compare three optical structures that could be applied to the typical organic light-emitting diode to increase the outcoupling efficiency. These were spherical scattering particles (treated as Mie scatterers) embedded in the glass substrate, microlenses formed on the glass substrate, and a diffusing layer (DL) with a Gaussian scattering distribution function inserted between the indium tin oxide (ITO) and the glass substrate. It was found that the application of microlens array and that of scattering particles in the glass substrate exhibited similar enhancements in the outcoupling efficiency when the density and the refractive index of the scattering particles were optimized. The DL located at the interface between the glass and the ITO further enhanced the efficiency because it could further extract the trapped light in the waveguide mode. The appropriate combination of these three structures increased the outcoupling efficiency to about 42%, which is much greater than the typical values of 15-20% when there is no optical structure for light extraction.

• 지능정보연구
• /
• 제28권4호
• /
• pp.135-155
• /
• 2022

본 연구는 Organic Light-Emitting Diodes(OLEDs) 산업의 하위기술 분야를 도출하여 특허 동향을 분석하고 각 하위기술 분야별 기술 가치, 독창성, 다양성을 분석한다. 특허 자료 수집을 위해 OLED 기술과 관련된 국제 특허 분류(International Patent Classification) 집합을 정의하고, 이를 활용해 2005년부터 2017년까지 출원된 OLED 연관 특허를 수집하였다. 이어서 토픽모델을 이용하여 대량의 특허 문서를 12가지 주요 기술로 구분하고 각 기술에 대한 동향을 조사하였다. 그중 터치 센서, 모듈, 이미지 처리, 회로 구동 관련 특허는 증가 추세를 보였으나 가상 현실, 사용자 인터페이스 관련 특허는 최근 감소하였고, 박막 트랜지스터, 지문 인식, 광학필름 관련 특허는 지속적인 추세를 보였다. 이후 각 기술 그룹에 포함된 특허의 전방 인용 수, 독창성, 다양성을 조사하여 기술적 가치를 비교하였다. 결과로부터 전방 인용 수, 독창성, 다양성이 높은 이미지 처리기술, UI/UX, 모듈 기술, 점착 기술 분야가 상대적으로 높은 기술적 가치를 보여주었다. 본 연구를 통해 기업의 기술 전략 수립과정에서 활용 가치가 높은 정보를 제공한다.

• 대한화학회지
• /
• 제46권3호
• /
• pp.229-232
• /
• 2002

폴리아닐린에 전자주게기(-CH3)를 치환하여 전자효과(electronic effect) 와 입체장애효과(steric effect)를 확인하였다.1 폴리아닐린 유도체 폴리톨루이딘(POT)의 산화상태를 변화시키면서 ITO/POT/Al 구조의 유기발광소자를 제작하여 PL, I- V 특성 및 전기발광 특성을 확인하였다. 발광소자의 구동전압은 9∼14 V 이었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1575-1577
• /
• 2002

In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

• 한국전기전자재료학회논문지
• /
• 제23권5호
• /
• pp.397-402
• /
• 2010

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1267-1270
• /
• 2006

Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

• Journal of Information Display
• /
• 제13권1호
• /
• pp.43-49
• /
• 2012

Depth sensitivity is considered one of the factors influencing 3D displays the most. In this paper, the perceptual 3D depth was quantitatively measured to compare the depth difference among the display devices. No difference was found in the typical display performance among the devices, but the subjective evaluation of the depth sensitivity where the disparity was varied showed that the organic light emitting diode (OLED) had the highest performance, mainly due to its almost 0% crosstalk, one of the features of OLED. Crosstalk is a form of image superposition that greatly affects the depth sensitivity. The experiment results showed that the quantitative depth sensitivity varies due to geometric factors such as disparity, viewing distance, and subjective sensitivity, depending on the display image characteristics, such as crosstalk and contrast.

• 반도체디스플레이기술학회지
• /
• 제20권4호
• /
• pp.141-145
• /
• 2021

The brightness of the Organic Light Emitting Diode (OLED) display is controlled by thin-film transistors (TFTs). Regardless of the materials and the structures of TFTs, an OLED suffers from the instable threshold voltage (V_th) of a TFT during operation. When designing an OLED pixel with circuit simulation tool such as SPICE, a designer needs to take V_th shift into account to improve the reliability of the circuit and various compensation methods have been proposed. In this paper, the effect of the compensation circuits from two typical OLED pixel circuits proposed in the literature are studied by the transient simulation with a SPICE tool in which the stretched-exponential time dependent V_th shift function is implemented. The simulation results show that the compensation circuits improve the reliability at the beginning of each frame, but V_th shifts from all TFTs in a pixel need to be considered to improve long-time reliability.