• 제목/요약/키워드: OLED(Organic Light-Emitting Diode)

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불꽃놀이 형상과 OLED를 기반으로 한 패션 액세서리 디자인 제안 (Fashion Accessory Design Suggestions Using Firework Images with the OLED Display Platform)

  • 김선영
    • 한국의류학회지
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    • 제35권10호
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    • pp.1188-1198
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    • 2011
  • This study proposes the use of firework shapes to design fashion accessories in the judgment that they are appropriate for the expression of creative images in consideration of the display of fireworks as a kind of entertainment and a festive symbol. This study promotes the sustainable application of firework shapes to develop the designs of fashion culture items that feature a distinctive personality and uniqueness. In this present study, the proposed fashion accessory design was intended to create an entertaining new atmosphere that uses an Organic Light Emitting Diode (OLED) that draws attention as a futuristic display. In terms of methodology, a literature review of firework shapes and OLED was conducted; in addition, Adobe Illustrator CS2 and Adobe Photoshop CS2 were used to develop six different standard motive designs with formative design elements represented by a variety of firework shapes. Each of the six motifs was further expanded with different color combinations. Rich images are produced with the use of pink, blue, purple, green, yellow, orange, and red, in conjunction with various OLED effects to express the three-dimensional images of fireworks. The motifs are applied to three types of items: bags, bracelets, and necklaces. For the video images, evening and tote bags, pendants, and bangles were used. Shifting images and lights should produce unique images as well as satisfy the consumer desire for entertainment. The Adobe Image Ready software was used to present the motive of fireworks applied to the design of fashion accessories in video images but not in still-cut images due to physical constraints of this paper.

AZO(ZnO-Ag-ZnO) 전극을 이용한 Bottom emission Organic Light Emitting Diode 제작 (Application of AZO electrode for bottom emission organic light emitting diode)

  • 김종연;한진우;강희진;문현찬;김종환;최성호;박광범;김태하;김휘운;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.58-59
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    • 2006
  • Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO 박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8{\Omega}$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO 박막과 유사한 성능을 나타내었다.

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RGB OLED의 전기적 특성 분석 (Electrical characteristics of RGB OLED)

  • 유지홍;한재호;최병덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.281-281
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    • 2009
  • Electrical analysis of red, green and blue (RGB) organic light emitting diode (OLED), which were measured at various temperatures from 230K to 370K by steps of 20K, were investigated using current-voltage(I-V) characteristics. Ideality factor and series resistance were obtained from the thermionic emission theory. Experimental results showed that the ideality factors were 2.12 for red, 3.80 for green, and 6.03 for blue OLED at 290K, respectively. The series resistance were 1960, 2190, 2630$\Omega$ for red, green and blue OLED at the same temperature. It was found that the OLED ideality factors were much higher than near unity for well-behaved silicon diodes, because of the organic material and multi-layer fabrication diode. In addition, the series resistance was near 2k$\Omega$ range. More researches are required to reduce both ideality factors and series resistance to increase the efficiency of OLEDs.

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Photo-Induced Memory of an OLED in the presence of thio-Michler's ketone

  • Enokida, Toshio;Gwon, Tae-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.281-284
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    • 2004
  • Photo-induced memory effect of an organic light-emitting diode(OLED) composed of a hydrazone-derivative(DBAH) dispersed in bis-phenol-A type polycarbonate polymer(PCA) in the presence of thio-Michler's ketone, was investigated by the measuring of the current density and luminance at the various conditions. After the light exposure, the current of the OLED was decreased approximately one order, and the luminance of the OLED also decresed. This memory effct was erasable by heating the OLED to the temperature higher than the glass transition temperature(Tg). As shown in this result, we found the memory effect was erased by heating and returned to its original state in the hole injecting layer(HIL) of the OLED. A series of these phenomena was suggested the possibility of the application to the imaging plate.

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OLED공정에서 사용되는 섀도마스크의 습식 세정 후 세정표면 및 세정용액 분석에 관한 연구 (Analysis of Post Cleaning Solution After Wet Cleaning of Shadow Mask Used in OLED Process)

  • 최은화;표성규
    • 마이크로전자및패키징학회지
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    • 제23권4호
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    • pp.7-10
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    • 2016
  • The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

휴대형 랩온어칩을 위한 집적화 광원으로의 OLED 적용 (Application of OLED as the Integrated Light source for the Portable Lab-On-a-Chip)

  • 김주환;신경식;김영민;김용국;양은경;김태송;강지윤;김상식;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.193-197
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    • 2004
  • The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

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White OLEDs의 전기 및 광학적 특성 평가 (Optical and electrical characteristics of White OLEDs)

  • 황선필;문대규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.25-26
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    • 2008
  • In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

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발광층($Alq_3$)의 두께 변화에 따른 OLED의 효율 특성 연구 (Efficiency Properties of OLED Depending on Thickness Variation of Emission Layer($Alq_3$))

  • 박준우;최규채;김동은;김병상;권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1236_1237
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    • 2009
  • Organic light emitting diode (OLED) is currently the focus of intense interest in the field of photonics. It is attractive for the in low-operating voltage, low power consumption, easy fabrication and low cost. A typical OLED consists of one or more organic layers sandwiched between a high work function anode, such as indium tin oxide (ITO), and a low work function cathode such as Ca, Mg:Ag, and Al. Tris-(8-hydroxy)quinolinealuminum ($Alq_3$) has taken a prominent position in the development of OLED due to its relative stability as an electron transporting and emitting material. We investigated an efficiency improvement of the OLED depending on thickness variation of $Alq_3$.

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Improved Light Extraction of Organic Light Emitting Diode With Microcavity structure based on $SiO_2/TiO_2/SIO_2$ Multi 1D Layer

  • Kang, Nam-Su;Kim, Jai-Kyeong;Yoo, Jai-Woong;Ju, Byeong-Kwon;Chin, Byung-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1440-1442
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    • 2007
  • In this work, we have modeled and fabricated microcavity-enhanced OLED using the 1-dimensional distributed Bragg reflector model (DBR). Results show that simulated spectrum intensity of microcavity OLED increased more than 30% compared to the conventional OLED, by use of DBR with $TiO_2$ and $SiO_2$. Spectral change of green and blue emission was expected to give the deeper color. The experimental design and characterization as well as the matching with simulated properties were performed for microcavity OLED for actual application.

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유기발광 소자의 수송층 두께 변화에 따른 수치적 해석 (Numerical Analysis of OLED Luminescence Efficiency by Hole Transport Layer Change)

  • 이정호
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1341-1346
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    • 2004
  • The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.