• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.705-709
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• 2003

The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• Journal of the Korean Chemical Society
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• v.56 no.4
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• pp.478-483
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• 2012

We successfully synthesized $Fe_3O_4/SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that was fine controlled by changing concentration of $Fe_3O_4$. Among various reaction conditions for silica coating, increasing concentration of $Fe_3O_4$ was more effective approach to decrease silica thickness compared to water-to-surfactant ratio control. Moreover, we found that concentration of the 1-octanol is also important factor to produce the homogeneous $Fe_3O_4/SiO_2$ nanoparticles. The present approach could be available to apply on preparation of other core/shell nanoparticles with ultrathin silica layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.291-299
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• 1993

Hydrothermal synthesis of 1.13nm tobermorite was performed to obtain the mixing ratio of raw materials, the optimum reaction time and the effect of aluminum in two systems, $CaO-SiO_2-H_2O$ and cement sludge-$SiO_2-H_2O$. 1.13nm tobermorite($5CaO{\cdot}6SiO_2{\cdot}5H_2O:C_5S_6H_5$) was synthesized excellently from $CaO-SiO_2-H_2O$ system on each mole ratio (0.4, 0.8) of $CaO/SiO_2$ at $180^{\circ}C$. But a tobermorite crystals had a sign of crystal conversion after 6 hours of reaction times in the case of $CaO/SiO_2=0.4$ and 4 hours of reaction time in the case of $CaO/SiO_2=0.8$. However, a tobermorite synthesized from cement sludge wastes did not show the crystal conversion on each mole ratio(0.4, 0.8) of $CaO/SiO_2$ within 10 hours of reaction times. It is considered that aluminum ions dissolved from cement sludge wastes retarded the recrystallization of tobermorite. This role of aluminum ion was confirmed in $CaO-SiO_2-H_2O+Al$ powder system. According as added amount of Al powder was increased from 0.8% to 3.0%, the crystal had a highly flatter and larger shape. Recrvstallization was not detected within the same reaction times when aluminum was added.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Journal of the Korean Chemical Society
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• v.41 no.4
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• pp.175-179
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• 1997

Luminescence of $Eu^{3+}$ has been studied in $Sr_{2-2x}Eu_xK_xSnO_4$ with two-dimensional $K_2NiF_4$ structure. The $^5D_o$ → $^7F_o$$Eu^{3+}$ ion represents the J=0 → J=0 transition which is forbidden by a Judd-Ofelt selection rule for electric dipole transition in 4f shell of $Eu^{3+}$ ions. However, the emission line of $^5D_o$ → $^7F_o$$Eu^{3+}$ emission spectra of Sr2-2xEuxKxSnO4$Sr_{2-2x}Eu_xK_xSnO_4$structure around $Eu^{3+}$ ions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.67-72
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• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• Journal of Magnetics
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• v.15 no.4
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• pp.165-168
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• 2010

$Li_{0.1}Zn_{0.9}O$ and $MgFe_2O_4$ powders were synthesized using chemical methods and mixed in different proportions to prepare a mixture of $Li_{0.1}Zn_{0.9}O$ and $MgFe_2O_4$ that was thermally treated between 900 to $1100^{\circ}C$ for 1 hour. Structural characterization was done using X-ray powder diffraction measurements. Grain sizes and morphologies of $Li_{0.1}Zn_{0.9}O$, $MgFe_2O_4$, and $Li_{0.1}Zn_{0.9}O+MgFe_2O_4$ samples were observed using a scanning electron microscope. Variation of magnetic properties of the $Li_{0.1}Zn_{0.9}O+MgFe_2O_4$ samples due to the addition of $Li_{0.1}Zn_{0.9}O$ was studied in relation to the structural changes occurring due to the thermal treatment. In particular, changes in the cationic distribution between the tetrahedral and octahedral positions were studied with respect to the increase of the annealing temperature. Magnetization was found to be dependent on the cations distributed in the tetrahedral and octahedral sites of the $MgFe_2O_4$.