• 한국지반환경공학회 논문집
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• 제3권2호
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• pp.49-60
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• 2002

퇴적암의 풍화특성을 파악하기 위해서는 풍화과정을 지배하는 암석의 광물조성과 화학성분에 대한 연구가 필요하다. 본 논문에서는 풍화정도에 따른 퇴적암의 특성을 고찰하기 위해서 대구지역에 분포하고 있는 퇴적암을 채취하여 화학 및 광물성분 분석과 물리 및 역학특성 시험을 실시하였다. 화학적풍화지수와 감열감량, 흡수율과 일축압축강도, 풍화지수와 일축압축강도가 좋은 상관관계를 나타내었으며 모암에 함유된 $A_2O_3$, CaO, $Na_2O$, $K_2O$, MgO 등의 화학성분과 조장석(Albite, Ab), 백운모(Muscovite, Ms), 마그네타이트(Magenetite, Mt)등의 광물성분이 풍화와 밀접한 관계가 있었다. 이 시험결과를 토대로 하여 퇴적암에 적용할 수 있는 정량적인 풍화도판정법의 적용성을 제시하자고 하였다.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.289-293
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• 2004

PNW-PMN-PZT ceramics were fabricated with the variations of Nb$_2$O$_{5}$ addition and their microstructural and piezoelectric characteristics were investigated. When the amount of Nb$_2$O$_{5}$ increased, grain size decreased gradually. At 0.3wt％ Nb$_2$O$_{5}$ which is the same weight percent with Fe$_2$O$_3$, maximum tetragonality(c/a) and density were shown due to the complexed doping effects. Also, this composition that showed Qm of 2,041, kp of 0.55, grain size of 2.5${\mu}{\textrm}{m}$ and $\varepsilon$r of 1704 were proper for high power application. Using this composition, Rosen-type piezoelectric transformer was fabricated as the size of 1 ${\times}$ 16 ${\times}$ 5㎣ and its electrical characteristics were investigated with the variations of load resistance and driving frequency. At the resistance of 200㏀, maximum step-up ratio of 13.68 was shown. After driving PDA CCFL for 25 min using the inverter circuit, at driving frequency of 214.4KHz, input voltage of 31.78 V and input current of 21.1mA were measured at the input part of piezoelectric transformer. And then, output voltage of 293.2 V and output current of 2.2mA were shown at the output part of piezoelectric transformer. At the same time, efficiency of 96.2％ and temperature rise of 3.5$^{\circ}C$ were appeared at the piezoelectric transformer.ormer.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.125-128
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• 2012

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

• 한국세라믹학회지
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• 제52권5호
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• pp.374-379
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• 2015

Mullite-matrix and $Al_2O_3$-matrix composites were fabricated with 30 wt% hydroxyapatite (HA) and tricalcium phosphate (TCP), respectively, as additives to give bioactivity. A diphasic gel process was employed to lower the densification temperature of the mullite matrix to $1320^{\circ}C$. A polymer complexation process was used to synthesize a TCP powder that was fully densified at $1250^{\circ}C$, for application to the matrix. For the HA/mullite composite, HA decomposed during sintering by reactions with the matrix components of $Al_2O_3$ and $SiO_2$, resulting in a mixture of $Al_2O_3$, TCP, and other minor phases with a low densification of less than 88% of the theoretical density (TD). In contrast, the TCP/$Al_2O_3$ composite was highly densified by sintering at $1350^{\circ}C$ to 96%TD with no reaction between the components. Different from the TCP monolith, the TCP/$Al_2O_3$ composite also showed a fine microstructure and intergranular fracture, both of which characteristics are advantageous for strength and fracture toughness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.236-239
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• 2003

In this study, to develop the low temperature sintering ceramics for piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of $MnO_2$ addition. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of $MnO_2$ addition, electromechanical coupling factor(kp) were increased until 0.3wt% $MnO_2$ and that after decreased. mechanical quality factor(Qm) showed the maxinum value at 0.5wt% $MnO_2$. For piezoelectric transformer application, the 0.5wt% $MnO_2$ added specimen sintered at $1,000^{\circ}C$ showed the proper value of ${\varepsilon}r$= 1,646, kp=0.55 and Qm=439.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• 한국토양비료학회지
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• 제46권6호
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• pp.463-468
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• 2013

The level of nitrous oxide ($N_2O$), a long-lived greenhouse gas, in atmosphere has increased mainly due to anthropogenic source, especially application of nitrogen fertilizers. Quantifying $N_2O$ emission from agricultural field is essential to develop national inventories of greenhouse gases (GHGs) emission. The objective of the study was to develop emission factor to estimate direct $N_2O$ emission from agricultural field in Gangwon-do, Korea by measuring $N_2O$ emissions from potato (Solanum tuberosum), red pepper (Capsicum annum L.), and Chinese cabbage (Brassica campestris L.) cultivation lands from 2009 to 2012. Accumulated $N_2O$ emission was $1.48{\pm}0.25kg$ $N_2O-N\;ha^{-1}$ for red pepper, $1.27{\pm}0.27kg$ $N_2O-N\;ha^{-1}$ for potato, $1.49{\pm}0.06kg$ $N_2O-N\;ha^{-1}$ for Chinese cabbage cultivated in spring, and $1.14{\pm}0.22kg$ $N_2O-N\;ha^{-1}$ for fall Chinese cabbage. Emission factor of $N_2O$ calculated from accumulated $N_2O$ emission, nitrogen fertilization rate, and background $N_2O$ emission was $0.0051{\pm}0.0016kg$ $N_2O-N\;ha^{-1}$ N for cropland in Gangwon province. More extensive study is deserved to be conducted to develop $N_2O$ emission factor for upland crops in Korea through examining the emission factors from various regions and crops because $N_2O$ emission is influenced by many factors including climate characteristics, soil properties, and agricultural practices.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.785-787
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• 2002

Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.